Radiation-proof strengthening method for bipolar device based on geometric structure of emitter region
A technology of anti-radiation reinforcement and geometric structure, which is applied in the field of electronics, can solve the problems of large current gain damage and low anti-radiation ability of bipolar devices, and achieve simple manufacturing process steps, enhanced anti-radiation ability, and wide application foreground effect
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specific Embodiment approach 1
[0021] Specific implementation mode one: the following combination figure 1 Describe this embodiment mode, the radiation resistance strengthening method for bipolar devices based on the geometric structure of the emitter described in this embodiment mode, the specific steps of the method are:
[0022] Step 1: using TCAD software to simulate the process parameters of the comb-like structure of the circular emission region of the bipolar device, and adopting the traditional process to prepare the bipolar device of the comb-shaped structure of the circular emitting region according to the simulated process parameters; the process parameters are The area and perimeter of the circular emitter comb structure;
[0023] Step 2: Using SRIM software to simulate and obtain the energy, incident depth and fluence information of ions injected into the bipolar device;
[0024] Step 3: Use TCAD software to simulate the current gain change of the bipolar device, change the ion implantation am...
specific Embodiment approach 2
[0028] Specific embodiment 2: This embodiment further limits the anti-radiation strengthening method for bipolar devices based on the geometric structure of the emission region described in the specific embodiment 1. In this embodiment, the ions described in step 2 are P-type emission regions ions or ions in the N-type emitter.
specific Embodiment approach 3
[0029] Specific implementation mode three: this implementation mode further limits the anti-radiation strengthening method for bipolar devices based on the geometric structure of the emitter region described in the second embodiment mode. In this embodiment mode, the ions in the P-type emission region are boron, Gallium ions.
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