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A preparation method of a silver film trap structure for suppressing secondary electron emission on the surface of microwave components

A technology for secondary electron emission and microwave components, applied in the microwave field, can solve the problems of poor controllability and low yield, and achieve the effects of good repeatability, increased porosity, and increased surface roughness

Inactive Publication Date: 2016-05-18
SHAANXI UNIV OF SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor controllability of the chemical etching process, the yield of the trap structure using this chemical method is not high.

Method used

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  • A preparation method of a silver film trap structure for suppressing secondary electron emission on the surface of microwave components
  • A preparation method of a silver film trap structure for suppressing secondary electron emission on the surface of microwave components
  • A preparation method of a silver film trap structure for suppressing secondary electron emission on the surface of microwave components

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] a) Cleaning of microwave components: place the microwave components in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 15 minutes, dry and set aside;

[0029] b) Preparation of ZnO nanoarrays: First, a layer of anhydrous ethanol solution of zinc acetate dihydrate with a concentration of 0.01mol / L was coated on the surface of microwave components by dip coating, then dried at 60°C, and successively Repeat the operation of coating and drying twice. Secondly, the microwave component was placed under a 300W ultraviolet lamp and irradiated for 30 minutes to prepare the seed crystal layer. Then, under the condition of room temperature and normal pressure, the above-mentioned microwave component containing the seed layer was placed face down (that is, the side on which the seed layer was grown was facing down), and placed obliquely in a zinc salt solution at 95° C. for 4 hours. After the growth is completed, the microwave component is taken out, cle...

Embodiment 2

[0032] a) Cleaning of microwave components: place the microwave components in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 15 minutes, dry and set aside;

[0033]b) Preparation of ZnO nanoarrays: First, a layer of anhydrous ethanol solution of zinc acetate dihydrate with a concentration of 0.04mol / L was coated on the surface of microwave components by dip coating, and then dried at 70°C, and repeated in sequence The operation of coating and drying was performed three times. Secondly, the microwave component was placed under a 300W ultraviolet lamp and irradiated for 40 minutes to prepare the seed crystal layer. Then, under the condition of room temperature and normal pressure, the above-mentioned microwave component containing the seed layer was placed face down (that is, the side on which the seed layer was grown was facing down), and placed obliquely in a zinc salt solution at 90° C. for 5 hours. After the growth is completed, the microwave com...

Embodiment 3

[0036] a) Cleaning of microwave components: place the microwave components in acetone, absolute ethanol, and deionized water for ultrasonic cleaning for 15 minutes, dry and set aside;

[0037] b) Preparation of ZnO nanoarrays: First, a layer of anhydrous ethanol solution of zinc acetate dihydrate with a concentration of 0.03mol / L was coated on the surface of microwave components by dip coating, then dried at 65°C, and sequentially The operation of coating and drying was repeated four times. Secondly, the microwave component was placed under a 300W ultraviolet lamp and irradiated for 50 minutes to prepare the seed crystal layer. Then, under the condition of normal temperature and normal pressure, the above-mentioned microwave component containing the seed layer was placed face down (that is, the side on which the seed layer was grown was facing down), and placed obliquely in a zinc salt solution at 92° C. for 4.5 hours. After the growth is completed, the microwave components a...

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Abstract

The invention discloses a preparation method of a silver membrane trap structure for inhibiting secondary electron emission on the surface of a microwave part. The preparation method comprises the steps of promoting growth of a ZnO nano array on the surface of the microwave part, plating silver in gaps of the nano array through electrochemical deposition, and carrying out corrosion treatment on a silver-plated sample sheet through diluted hydrochloric acid, thus finally forming the silver film trap structure on the surface of the microwave part. By constructing the silver film trap structure on the surface of the microwave part, a surface porosity of the microwave part and a depth-width ratio of nano-pores are greatly increased; secondary electron emission on the surface of the microwave part is obviously inhibited; a secondary electron emission coefficient of the surface of the part is reduced to be less than 1.0.

Description

technical field [0001] The invention belongs to the field of microwave technology, and relates to a method for suppressing the emission of secondary electrons on the surface of a microwave component, in particular to a method for preparing a silver film trap structure for suppressing the emission of secondary electrons on the surface of a microwave component. Background technique [0002] Microdischarge is usually excited by the radio frequency electric field transmitted in the component, and the electrons that are accelerated in the radio frequency electric field and gain energy hit the surface of the component to generate secondary electrons to form a multiplied discharge phenomenon. At present, most of the substrates of microwave passive components in satellite payload systems are aluminum alloys with silver-plated surfaces. These silver-plated components are prone to micro-discharge during the transmission of high-power electromagnetic waves, and the breakdown of micro-di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D3/46C25D5/10C25D5/44
Inventor 马建中张永辉鲍艳崔万照胡天存
Owner SHAANXI UNIV OF SCI & TECH
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