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Ceria based electrolyte film with preferred orientation and its preparation and application

An electrolyte film and preferential orientation technology, which is applied in the field of cerium oxide-based electrolyte film and its preparation, can solve the problems such as the inability to prepare cerium oxide-based electrolyte film, and achieve the advantages of improving electrocatalytic performance, improving ohmic resistance and reducing polarization resistance. Effect

Active Publication Date: 2014-06-25
DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the traditional ceramic sintering method cannot prepare cerium oxide-based electrolyte films with preferred orientation, it is necessary to use physical vapor deposition technology to prepare cerium oxide-based electrolyte films

Method used

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  • Ceria based electrolyte film with preferred orientation and its preparation and application
  • Ceria based electrolyte film with preferred orientation and its preparation and application

Examples

Experimental program
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Effect test

Embodiment 1

[0020] In nickel oxide with Y 2 o 3 Stable ZrO 2 Composite anode / Y 2 o 3 Stable ZrO 2 Dense Gd with preferred orientation of (100) sputtered on membrane electrode (NiO-YSZ / YSZ) 2 o 3 Doped CeO 2 (Gd 0.1 Ce 0.9 o 1.95 ) Electrolyte interlayer, ultrasonically clean the anode-supported membrane electrode with acetone, ethanol, and distilled water in sequence and dry it, then put it into the vacuum chamber of the magnetron sputtering instrument, adjust the target base distance to about 6cm, and use cerium / Gadolinium alloy material is used as the target material, the purity of the target material is above 99.99%, the cerium / gadolinium molar ratio is 9 / 1, and the vacuum is 8*10 -4 Pa, then heat the substrate table, the temperature rises to 400°C, the flow rate of argon gas is 10.0 sccm, the flow rate of oxygen gas is 1.2 sccm, and the sputtering power is 9W / cm 2 , the sputtering pressure is 0.5Pa, the rotation speed of the substrate stage is set to 5 cycles / min, the thic...

Embodiment 2

[0022] In nickel oxide with Y 2 o 3 Stable ZrO 2 Composite anode / Sc 2 o 3 Stable ZrO 2 Dense Gd with sputtered texture orientation of (110) on the membrane electrode (NiO-YSZ / ScSZ) 2 o 3 Doped CeO 2 (Gd 0.2 Ce 0.8 o 1.9 ) Electrolyte interlayer, adjust the target base distance to about 7cm, use cerium / samarium alloy material as the target material, the purity is above 99.9%, the molar ratio of cerium / samarium is 8 / 2, and vacuumize to 8*10 -4 Pa, then heat the substrate table, the temperature rises to 300°C, the argon flow rate is 40.0sccm, the oxygen flow rate is 5.0sccm, and the sputtering power is 8W / cm 2 , the sputtering pressure is 1.0Pa, the thickness is about 600nm, the rotation speed of the substrate table is set at 10 cycles / min, and the dense Gd 0.2 Ce 0.8 o 1.9 After the sputtering of the interlayer, the dense Gd sputtered texture orientation of (110) on the membrane electrode (NiO-YSZ / ScSZ) was detected by XRD 2 o 3 Doped CeO 2 (Gd 0.2 Ce 0.8 o 1....

example 3

[0024] Sputter deposition of dense Sm with texture orientation of (110) on NiO-SDC anode substrate 2 o 3 Doped CeO 2 (Sm 0.2 Ce 0.8 o 1.9 ) Electrolyte layer, adjust the target base distance to about 6cm, use cerium / samarium alloy material as the target material, the purity is above 99.9%, the molar ratio of cerium / samarium is 8 / 2, and vacuumize to 8*10 -4 Pa, then heat the substrate table, the temperature rises to 400°C, the argon flow is 40.0sccm, the oxygen flow is 5.0sccm, and the sputtering power is 8W / cm 2 , the sputtering pressure is 0.8Pa, the thickness is about 600nm, and the speed of the substrate table is set at 10 revolutions / minute, with Ba 0.5 Sr 0.5 co 0.8 Fe 0.2 o 3 (BSCF) with Sm 0.2 Ce 0.8 o 1.9 Composite materials (where Sm 0.2 Ce 0.8 o 1.9 The mass fraction is 30wt.%) as the cathode, and the battery performance test is carried out on the four-terminal method battery test device, with air as the cathode gas and wet hydrogen as the anode gas. T...

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Abstract

The invention discloses a ceria based electrolyte film with a preferredly exposed crystal surface which can be used as an electrolyte interlayer of a solid oxide fuel cell, and can also be used alone as an electrolyte layer of the solid oxide fuel cell, or used for the catalytic reaction; the film is prepared by a magnetron reactive sputtering method. By the use of the ceria based electrolyte film with the preferredly exposed crystal surface, electro-catalytic properties of a cathode on oxygen and an anode on a fuel gas and conductive properties of the ceria based electrolyte film can be effectively improved, the electrode polarization resistance and ohmic polarization resistance can be reduced, and the middle and low temperature performance of the cell can be effectively improved.

Description

technical field [0001] The invention relates to the field of solid oxide fuel cells, in particular to a cerium oxide-based electrolyte film with preferentially exposed crystal planes and a preparation method thereof. Background technique [0002] Solid oxide fuel cell is an energy conversion device that can efficiently convert the chemical energy in fuel gas (such as hydrogen, natural gas, coal gas, etc.) Low noise, it is an ideal distributed power station and centralized power station technology, and can also be applied to vehicle auxiliary power supply, portable power supply, etc. [0003] In order to reduce manufacturing costs, improve long-term battery stability and reliability, and shorten start-up time, medium and low temperature solid oxide fuel cells with an operating temperature of 400-700 °C have become the focus of research and development at home and abroad. The cerium oxide-based film can be used alone as an electrolyte layer for solid oxide fuel cells with an ...

Claims

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Application Information

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IPC IPC(8): H01M8/10H01M4/86
CPCH01M8/126H01M2008/1293Y02E60/50
Inventor 程谟杰武卫明涂宝峰区定容崔大安
Owner DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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