A kind of manufacturing method of three-dimensional infrared light source
A technology of infrared light source and manufacturing method, which is applied in the manufacture of microstructure devices, techniques for producing decorative surface effects, decorative art, etc., which can solve the problems of reducing energy utilization and heat dissipation of infrared light sources, and reduce heat consumption Dissipation, reduce heat conduction, high mechanical strength
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Embodiment 1
[0066] 1) Formed on the front and back sides of a 4-inch silicon wafer by thermal oxidation The silicon dioxide film is used as a mask for subsequent anisotropic etching, and the silicon wafer used is an N-type (100) double-polished silicon wafer, and its front and back are the 100 crystal planes of the silicon wafer;
[0067] 2) On the silicon oxide film in step (1), an array window pattern is produced by a photolithography process, and the outline formed by the arrangement of the array window pattern 13 is as follows Figure 12 Rectangle shown; under the protection of photoresist, silicon dioxide is etched along the array window by reactive ion etching (RIE) until the silicon surface is exposed;
[0068] 3) using KOH solution to etch along the array window to obtain a silicon groove array with a depth of 10 μm; according to the difference in etching time, a silicon groove array with a V-shaped longitudinal section or an inverted trapezoidal silicon groove array with a longi...
Embodiment 2
[0076] The difference between this embodiment and the first embodiment is that the outline of the arrangement of the array window graphics is different. In the first embodiment, the outline of the arrangement of the array window graphics is a rectangle, while in this embodiment, the The outline formed by the arrangement of the array window graphics is a regular hexagon. The specific steps are:
[0077] 1) Formed on the front and back sides of a 4-inch silicon wafer by thermal oxidation The silicon dioxide thin film is used as the mask of subsequent anisotropic etching, and the silicon wafer is an N-type (100) double-throwing silicon wafer, and its front and back are the 100 crystal planes of the silicon wafer;
[0078] 2) On the silicon oxide film in step (1), the array window pattern 12 is produced by a photolithography process, and the outline formed by the arrangement of the array window pattern is as follows Figure 13 The regular hexagon shown; under the protection of ph...
Embodiment 3
[0087] The difference between this embodiment and Embodiment 1 and Embodiment 2 is that the outline graph formed by the arrangement of the array window graphics is different and the shape of the resistance wire is different. In Embodiment 1, the arrangement of the array window graphics constitutes The outline figure of the figure is a rectangle, and the outline figure formed by the arrangement of the array window figure in the second embodiment is a regular hexagon; the shapes of the resistance wires in the first and second embodiments are all square waveforms. However, in this embodiment, the outline pattern formed by the arrangement of the array window pattern is serpentine, and the shape of the resistance wire is a serpentine shape matching the array window pattern. The specific steps are:
[0088] 1) Formed on the front and back sides of a 4-inch silicon wafer by thermal oxidation The silicon dioxide thin film is used as the mask of subsequent anisotropic etching, and th...
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Abstract
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