Copper-zinc-tin-sulfur (CZTS) thin film and preparation method and purposes thereof

A copper-zinc-tin-sulfur and thin-film technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., to achieve good compactness, simple and easy preparation method, and good photoelectrochemical performance

Inactive Publication Date: 2014-07-23
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the chemical stability of copper-zinc-tin-sulfu

Method used

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  • Copper-zinc-tin-sulfur (CZTS) thin film and preparation method and purposes thereof
  • Copper-zinc-tin-sulfur (CZTS) thin film and preparation method and purposes thereof
  • Copper-zinc-tin-sulfur (CZTS) thin film and preparation method and purposes thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0040] Example 1

[0041] 1. Preparation of CuZnSnS thin film

[0042] (1) Dissolve cupric chloride, zinc chloride, stannous chloride and thiourea in methanol or ethanol at a molar ratio of 0.5:1:0.5:5 at room temperature, and stir until clear and transparent to obtain a precursor solution;

[0043] (2) The substrate FTO was ultrasonically cleaned successively in acetone, ethanol, and deionized water, and the cleaning time was 5 minutes;

[0044] (3) The precursor solution is spin-coated on the substrate FTO, the spin-coating rate is 2000 rpm, and the spin-coating time is 30 seconds; and then dried at 150° C. for 10 minutes. This step is repeated several times until the desired film thickness is obtained.

[0045] (4) The sample obtained in step (3) is placed in argon or nitrogen, and calcined at 350° C. for 1 hour to obtain a copper-zinc-tin-sulfur thin film.

[0046] 2. Preparation of copper zinc tin sulfur / cadmium sulfide / titanium dioxide thin film

[0047] (1) Use cadm...

Example Embodiment

[0062] Example 2

[0063] 1. Preparation of copper-zinc-tin-sulfur thin films

[0064] (1) at room temperature, copper chloride, zinc chloride, stannous chloride and thiourea are jointly dissolved in methanol or ethanol in a molar ratio of 0.5:1:0.5:4, and stirred until clear and transparent to obtain a precursor solution;

[0065] (2) The substrate FTO was ultrasonically cleaned in acetone, ethanol and deionized water respectively, and the cleaning time was 5 minutes;

[0066] (3) Spin-coating the precursor solution on the substrate FTO, the spin-coating speed is 300 rpm, and the spin-coating time is 120 seconds; and then dried at 100° C. for 30 minutes. This step is repeated several times until the desired film thickness is obtained.

[0067] (4) The sample obtained in step (3) is placed in argon or nitrogen, and calcined at 200° C. for 1 hour to obtain a copper-zinc-tin-sulfur thin film.

[0068] 2. Preparation of copper-zinc-tin-sulfur / cadmium sulfide / titanium dioxide t...

Example Embodiment

[0072] Example 3

[0073] 1. Preparation of copper-zinc-tin-sulfur thin films

[0074] (1) at room temperature, copper chloride, zinc chloride, stannous chloride and thiourea are jointly dissolved in methanol or ethanol in a molar ratio of 2:1:1:20, and stirred until clear and transparent to prepare a precursor solution;

[0075] (2) The substrate FTO was ultrasonically cleaned successively in acetone, ethanol and deionized water, and the cleaning time was 30 minutes;

[0076] (3) Spin-coating the precursor solution on the substrate FTO, the spin-coating speed is 3500 rpm, and the spin-coating time is 5 seconds; and then dried at 200° C. for 5 minutes. This step is repeated several times until the desired film thickness is obtained.

[0077] (4) The sample obtained in step (3) is placed in argon or nitrogen, and calcined at 600° C. for 1 hour to obtain a copper-zinc-tin-sulfur thin film.

[0078] 2. Preparation of copper-zinc-tin-sulfur / cadmium sulfide / titanium dioxide thin...

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Abstract

The invention discloses a preparation method of a copper-zinc-tin-sulfur (CZTS) thin film. The preparation method includes the first step of preparing a precursor solution, dissolving copper chloride, zinc chloride, stannous chloride and thiourea jointly into methyl alcohol or ethyl alcohol and stirring the solution to be clear and transparent, the second step of carrying out ultrasonic cleaning on a substrate FTO in acetone, ethanol and deionized water respectively and sequentially, the third step of coating the precursor solution on the surface of the substrate FTO and then drying the substrate FTO, and the fourth step of placing a sample obtained in the third step into nitrogen or argon for calcining to obtain the CZTS thin film. The preparation method of the CZTS thin film is simple, easy to implement and suitable for mass production; the prepared CZTS thin film is smooth in surface, free of cracks, excellent in performance, good in photoelectrochemical performance, high in chemical stability and capable of being widely applied to the field of production of semiconductor nano-films and photoelectrocatalysis.

Description

technical field [0001] The invention relates to a thin film and its preparation method and application, in particular to a copper-zinc-tin-sulfur thin film and its preparation method and application. Background technique [0002] In recent years, energy and environmental issues have become increasingly serious, and research on the direct conversion of solar energy to chemical energy has attracted more and more attention, such as converting solar energy into hydrogen and / or oxygen through photoelectrochemical processes. Copper zinc tin sulfur (abbreviated as CZTS) has many advantages, such as: the light absorption coefficient exceeds 10 4 cm -1 , the band gap is about 1.5eV, and copper, zinc, tin, and sulfur elements are abundant in nature and do not pollute the environment. At present, the efficiency of its application in solar cells has reached 12%, and it has also received attention as a photoelectrode material. For the preparation of copper-zinc-tin-sulfur thin films, ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032
CPCH01L21/02425H01L21/02568H01L21/02628H01L31/0326H01L31/18Y02P70/50
Inventor 高濂王静张鹏宋雪峰
Owner SHANGHAI JIAO TONG UNIV
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