Thin film used for hole sealing of porous interconnection dielectric surface and preparing method of thin film

Abstract

The invention belongs to the technical field of super-large-scale integrated circuits, and particularly relates to a method for preparing a material for hole sealing of a porous interconnection dielectric surface. An organic liquid state source MTES is taken as a liquid source and enters a cavity along with He carrier gas after being vaporized to be mixed with C2F6 gas, a plasma enhanced chemical vapor deposition (PECVD) process is adopted, and a thin film is deposited on the porous low-dielectric-constant interconnection dielectric surface. The dielectric constant of the thin film is 2.8-3.3, the order of magnitude of the leakage current density is 10-9 A / cm2 under the electric field strength of 1 MV / cm, the Young modulus is 16.21-37.33 GPa, and the hardness is 1.25-3.03 GPa. The thin film can be used for hole sealing of the porous interconnection dielectric surface in super-large-scale integrated circuit rear-end interconnection, and meanwhile performs the function of improving adhesion strength between a porous dielectric layer and a cap layer or a diffusion impervious layer.

Description

technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuit manufacturing, and in particular relates to a film used for sealing pores on the surface of a porous interconnection medium and a preparation method thereof. Background technique [0002] Due to the large-scale development of integrated circuits, its feature size has also decreased rapidly, which has led to a sharp increase in the delay of integrated circuit interconnection RC (R refers to resistance, C refers to capacitance), which greatly limits the speed of circuit operation, and It brings the problems of signal crosstalk and increased power consumption. Replacing aluminum with copper can reduce the resistance of integrated circuits; similarly, reducing parasitic capacitance is also an effective way to improve the performance of integrated circuits. Among them, replacing SiO with low dielectric constant (k) materials 2 (k≈4.0) is an effective method [1]. In order ...

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Problems solved by technology

Using PECVD technology, doping porogens in organic liquid sources can effectively reduce the dielectric constant, but its mechanical properties and electrical properties will decrease

On the other hand, because the ultra-low-k material has the characteristics of high porosity, it will cause its adhesion to the capping layer to decrease, or more capping layer material will enter the pores of the ultra-low-k material, resulting in the effective interconnection of the dielectric layer. Increased dielectric constant

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