Parallel pin type β irradiation battery and preparation method thereof

A parallel and N-type technology, applied in the field of microelectronics, can solve the problems of low energy conversion efficiency and large energy loss of incident particles in nuclear batteries, and achieve the effects of reducing damage, improving energy collection rate, and reducing energy attenuation

Active Publication Date: 2016-10-12
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the nuclear battery with this structure has a large energy loss of incident particles and low energy conversion efficiency.

Method used

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  • Parallel pin type β irradiation battery and preparation method thereof
  • Parallel pin type β irradiation battery and preparation method thereof
  • Parallel pin type β irradiation battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1, preparation β radiation source is Ni 63 , a parallel-connected PIN-type β-irradiated cell with two trenches.

[0040] Step 1: Make the lower PIN knot.

[0041] (1) Clean the 4H-SiC sample to remove surface pollutants, such as image 3 (a) shown.

[0042] (1.1) Set the doping concentration to lx10 18 cm -3 Highly doped n-type 4H-SiC substrate sample in NH 4 OH+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;

[0043] (1.2) Use HCl+H to remove the 4H-SiC sample after removing the surface organic residue 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.

[0044] (2) Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b) shown.

[0045] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are...

Embodiment 2

[0063] Embodiment 2, preparation β radiation source is Ni 63 , a parallel-connected PIN-type β-irradiated cell with six trenches.

[0064] Step 1: Make the lower PIN knot.

[0065] 1) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a).

[0066] This step is the same as step (1) of Example 1.

[0067] 2) Epitaxial growth of N-type low-doped epitaxial layer, such as image 3 (b).

[0068] A nitrogen-doped N-type doped epitaxial layer is epitaxially grown on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are: epitaxy temperature is 1570°C, pressure is 100mbar, reaction gas is silane and propane, carrier gas is pure hydrogen, magazine source is liquid nitrogen, and the concentration of nitrogen doping is 1.5x10 15 cm -3 , the growth of an N-type low-doped epitaxial layer with a thickness of 8 μm.

[0069] 3) Epitaxial growth of P-type highly doped epitaxial layer, such as image 3 (c) shown.

[0070] On the grown...

Embodiment 3

[0083] Embodiment 3, preparation β radiation source is Pm 147 , a parallel-connected PIN-type beta-irradiated cell with 12 trenches.

[0084] Step A: Make the upper PIN knot.

[0085] (A1) Clean the 4H-SiC sample to remove surface contaminants, such as image 3 (a).

[0086]This step is the same as step (1) of Example 1.

[0087] (A2) Epitaxially grow a nitrogen-doped N-type low-doped epitaxial layer on the cleaned SiC sample by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1570°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, and the magazine source is liquid nitrogen. A nitrogen doping concentration of 3x10 15 cm -3 , the N-type low-doped epitaxial layer with a thickness of 10 μm such as image 3 (b).

[0088] (A3) A P-type highly doped epitaxial layer doped with aluminum ions is epitaxially grown on the grown N-type low-doped epitaxial layer by chemical vapor depo...

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Abstract

The invention discloses a parallel-connected PIN type beta irradiation battery and a preparation method thereof, which mainly solve the problems of low energy conversion rate and output power of current nuclear batteries. It includes: parallel upper and lower PIN junctions and β radiation sources; the lower PIN junction is in order from bottom to top, N-type ohmic contact electrode, N-type highly doped 4H-SiC substrate, N-type low-doped epitaxy Layer, P-type highly doped epitaxial layer and P-type ohmic contact electrode, the top-down structural distribution of the upper PIN junction is the same as the bottom-up structural distribution of the lower PIN junction; there are multiple grooves in each PIN junction, An α-radiation source is placed in each groove; two PIN junctions are in contact with each other through a P-type ohmic contact electrode, and the upper and lower grooves are mirror-symmetrical and connected to each other. The invention has the advantages of large contact area between the radioactive source and the semiconductor, high nuclear material utilization rate and energy collection rate, and high battery output voltage, and can provide long-lasting power supply for tiny circuits, or for places such as polar regions and deserts.

Description

technical field [0001] The invention belongs to the field of microelectronics, and relates to a semiconductor device structure and a preparation method, in particular to a silicon carbide-based parallel PIN type β irradiation battery and a preparation method thereof, which can be used in micro-circuits such as micro-nano electromechanical systems and aerospace , deep sea, polar regions and other occasions that require long-term power supply and are unattended. technical background [0002] With people's demand for low power consumption, long life, high reliability and small size power supply equipment, as well as concerns about nuclear waste disposal, micronuclear batteries have become more and more popular. . Due to its outstanding characteristics, micronuclear batteries can be used to solve the long-term power supply problems of micropipe robots, implanted microsystems, wireless sensor node networks, artificial cardiac pacemakers, and portable mobile electronics. And it ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G21H1/06
Inventor 郭辉顾磊王悦湖张艺蒙张玉明
Owner XIDIAN UNIV
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