Series-connection PIN-structure alpha irradiation battery and preparation method
A tandem, battery technology, applied in the field of microelectronics, can solve the problems of low β-ray energy, limit the output size of β-irradiated batteries, and low irradiated carrier energy, achieve good anti-irradiation characteristics and improve energy. The effect of collection rate and large forbidden band width
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Embodiment 1
[0057] Embodiment 1, preparation α radiation source is Am 241 , a tandem PIN structure α-irradiated cell with two trenches.
[0058] Step 1: Make the upper PIN knot.
[0059] refer to Figure 4 , the implementation of this step is as follows:
[0060] (1a) Clean the P-type highly doped SiC substrate to remove surface pollutants, such as Figure 4 As shown in (a):
[0061] (1a.1) Set the doping concentration to 1x10 18 cm -3 The P-type highly doped SiC substrate in NH 4 OH+H 2 o 2 Soak in the reagent for 10 minutes, take it out and dry it to remove the organic residue on the surface of the sample;
[0062] (1a.2) After removing the surface organic residues, the P-type highly doped SiC substrate was treated with HCl+H 2 o 2 Soak the sample in the reagent for 10 minutes, take it out and dry it to remove ionic pollutants.
[0063] (1b) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) as shown:
[0064] An aluminum-doped P-type low-doped epi...
Embodiment 2
[0098] Embodiment 2, preparation α radiation source is Am 241 , a tandem PIN structure α-irradiated cell with 8 trenches.
[0099] Step 1: Make the upper PIN knot.
[0100] refer to Figure 4 , the implementation of this step is as follows:
[0101] 1) Clean the P-type highly doped SiC substrate to remove surface pollutants. The doping concentration of the P-type highly doped SiC substrate is 1×10 18 cm -3 ,Such as Figure 4 As shown in (a):
[0102] This step is the same as step (1a) of Embodiment 1.
[0103] 2) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) shown.
[0104] An aluminum-doped P-type doped epitaxial layer is epitaxially grown on the cleaned P-type highly doped SiC substrate by chemical vapor deposition CVD method. The process conditions are as follows: the epitaxy temperature is 1550°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, the impurity source is trimethylaluminum...
Embodiment 3
[0138] Embodiment 3, preparation α radiation source is Pu 238 , a tandem PIN structure α-irradiated cell with 12 grooves.
[0139] Step A: Make the upper PIN knot.
[0140] refer to Figure 4 , the implementation of this step is as follows:
[0141] A1) Clean the P-type highly doped SiC substrate to remove surface pollutants. The P-type highly doped SiC substrate has a doping concentration of 1×10 18 cm -3 ,Such as Figure 4 As shown in (a):
[0142] The implementation of this step is the same as the step (1a) of Embodiment 1.
[0143] A2) Epitaxial growth of P-type low-doped epitaxial layer, such as Figure 4 (b) shown.
[0144] An aluminum-doped P-type low-doped epitaxial layer is epitaxially grown on the cleaned P-type highly-doped SiC substrate by chemical vapor deposition CVD. The process conditions are as follows: the epitaxy temperature is 1550°C, the pressure is 100mbar, the reaction gas is silane and propane, the carrier gas is pure hydrogen, the impurity sou...
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