Planar heterogeneous perovskite solar cell and preparation method thereof
A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that limit the development of perovskite-based thin-film solar cell technology, poor film-forming properties of perovskite layers, and many holes in perovskite layers , to achieve the effect of increasing current density and open circuit voltage, increasing fill factor, and reducing interfacial recombination centers
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Embodiment 1
[0040] The first step is to prepare a transparent electrode:
[0041] The ITO conductive glass was etched with concentrated hydrochloric acid to form an electrode pattern, and then ultrasonically cleaned with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 10 minutes, then dried with nitrogen, and treated with UV / ozone for 20 minutes.
[0042] The second step is to prepare a dense layer:
[0043] Coating nano-TiO on the surface of transparent electrode by screen printing method 2 The precursor solution of the particle colloid is then put into a muffle furnace and sintered at a high temperature of 450° C. for 30 minutes to form a dense layer with a thickness of 45 nm.
[0044] The third step is to prepare the interface modification layer:
[0045] The interface modification layer was prepared on the surface of the dense layer by spin-coating method, and the nano-Al 2 o 3 Slurry (average particle diameter 20nm, solid content 2.5%) was spin-coated o...
Embodiment 2
[0055] The third step is to prepare the interface modification layer:
[0056] SiO with a thickness of 2 nm prepared on the surface of a dense layer by plasma-enhanced chemical vapor deposition 2 Interface modification layer.
[0057] The preparation method of other steps is the same as that of Example 1.
[0058] The device structure of the planar heterojunction perovskite solar cell prepared by the above method is as follows: figure 1 Shown: G / ITO / TiO 2 /
[0059] SiO 2 / CH 3 NH 3 PB 3 / spiro-OMeTAD / Au with an effective area of 0.09cm 2 , the photoelectric conversion efficiency data are shown in Table 1, and the test conditions are the same as in Example 1.
Embodiment 3
[0061] The third step is to prepare the interface modification layer:
[0062] The interface modification layer was prepared by spraying on the surface of the dense layer, and the nano-ZrO 2 The slurry (average particle diameter 20nm, solid content 5%) is sprayed on the surface of the dense layer, and then heated and annealed at 400°C for 30min to form ZrO with a thickness of 5nm. 2 Interface modification layer.
[0063] The preparation method of other steps is the same as that of Example 1.
[0064] The device structure of the planar heterojunction perovskite solar cell prepared by the above method is as follows: figure 1 Shown: G / ITO / TiO 2 /
[0065] ZrO 2 / CH 3 NH 3 PB 3 / spiro-OMeTAD / Au with an effective area of 0.09cm 2 , the photoelectric conversion efficiency data are shown in Table 1, and the test conditions are the same as in Example 1.
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