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Planar heterogeneous perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that limit the development of perovskite-based thin-film solar cell technology, poor film-forming properties of perovskite layers, and many holes in perovskite layers , to achieve the effect of increasing current density and open circuit voltage, increasing fill factor, and reducing interfacial recombination centers

Inactive Publication Date: 2014-10-29
CHINA LUCKY FILM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] (3) The interface effect and the huge surface tension of the perovskite crystallization make the film-forming property of the perovskite layer poor, and it is easy to form an island phenomenon, which increases the number of holes in the perovskite layer
[0008] The above factors greatly limit the development of perovskite-based thin film solar cell technology

Method used

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  • Planar heterogeneous perovskite solar cell and preparation method thereof
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] The first step is to prepare a transparent electrode:

[0041] The ITO conductive glass was etched with concentrated hydrochloric acid to form an electrode pattern, and then ultrasonically cleaned with detergent, deionized water, absolute ethanol, acetone, and isopropanol for 10 minutes, then dried with nitrogen, and treated with UV / ozone for 20 minutes.

[0042] The second step is to prepare a dense layer:

[0043] Coating nano-TiO on the surface of transparent electrode by screen printing method 2 The precursor solution of the particle colloid is then put into a muffle furnace and sintered at a high temperature of 450° C. for 30 minutes to form a dense layer with a thickness of 45 nm.

[0044] The third step is to prepare the interface modification layer:

[0045] The interface modification layer was prepared on the surface of the dense layer by spin-coating method, and the nano-Al 2 o 3 Slurry (average particle diameter 20nm, solid content 2.5%) was spin-coated o...

Embodiment 2

[0055] The third step is to prepare the interface modification layer:

[0056] SiO with a thickness of 2 nm prepared on the surface of a dense layer by plasma-enhanced chemical vapor deposition 2 Interface modification layer.

[0057] The preparation method of other steps is the same as that of Example 1.

[0058] The device structure of the planar heterojunction perovskite solar cell prepared by the above method is as follows: figure 1 Shown: G / ITO / TiO 2 /

[0059] SiO 2 / CH 3 NH 3 PB 3 / spiro-OMeTAD / Au with an effective area of ​​0.09cm 2 , the photoelectric conversion efficiency data are shown in Table 1, and the test conditions are the same as in Example 1.

Embodiment 3

[0061] The third step is to prepare the interface modification layer:

[0062] The interface modification layer was prepared by spraying on the surface of the dense layer, and the nano-ZrO 2 The slurry (average particle diameter 20nm, solid content 5%) is sprayed on the surface of the dense layer, and then heated and annealed at 400°C for 30min to form ZrO with a thickness of 5nm. 2 Interface modification layer.

[0063] The preparation method of other steps is the same as that of Example 1.

[0064] The device structure of the planar heterojunction perovskite solar cell prepared by the above method is as follows: figure 1 Shown: G / ITO / TiO 2 /

[0065] ZrO 2 / CH 3 NH 3 PB 3 / spiro-OMeTAD / Au with an effective area of ​​0.09cm 2 , the photoelectric conversion efficiency data are shown in Table 1, and the test conditions are the same as in Example 1.

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Abstract

The invention discloses a planar heterogeneous perovskite solar cell and a preparation method thereof. The planar heterogeneous perovskite solar cell comprises a substrate and a transparent electrode, a compact layer, an interface modification layer, a perovskite light-absorbing layer, a hole transferring layer and a counter electrode which are sequentially overlapped on the substrate. According to the planar heterogeneous perovskite solar cell, the interface modification layer is added between the compact layer and the perovskite light-absorbing layer, the interface of the compact layer is modified to form an ultrathin passivation layer, so that perovskite light-absorbing layer film formation quality is modified, interface contact resistance is reduced, the perovskite light-absorbing layer and the hole transferring layer are prevented from directly contacting, the perovskite light-absorbing layer is prevented from decomposing, production of electronic reverse compounding and leakage current is reduced, and thereby photoelectric conversion efficiency and stability of the cell are significantly improved.

Description

technical field [0001] The invention relates to the technical field of perovskite-based thin-film solar cells, in particular to a perovskite solar cell with a planar heterojunction structure and a preparation method thereof. Background technique [0002] Solar photovoltaic technology is an important part of green energy. The development of new high-efficiency, long-life, low-cost and environmentally friendly solar cell materials and technologies has always been the main direction of solar cell development. In various new solar cells, perovskite-type organic lead halide materials with layered structure (such as CH 3 NH 3 PB 3 ) has attracted the attention of many researchers due to its unique photoelectric properties such as direct band gap, high light absorption coefficient, and high carrier mobility, and is widely used as light-absorbing layer materials for thin-film solar cells. With the development of perovskite solar cell technology, the photoelectric conversion effi...

Claims

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Application Information

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IPC IPC(8): H01L31/04H01L31/18
CPCH10K30/00H10K30/30Y02E10/549Y02P70/50
Inventor 侯丽新刘贤豪王亚丽陈月霞
Owner CHINA LUCKY FILM CORP
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