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Sic semiconductor device and method for manufacturing same

A device manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of large deviation of contact resistance and inability to obtain forward voltage drop, etc., and achieve small deviation and low back contact resistance , Improve the effect of back contact resistance

Active Publication Date: 2014-10-29
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] However, the ohmic electrodes obtained by the prior art such as the above-mentioned Patent Document 3 and the above-mentioned Patent Document 4 have problems in that the variation in contact resistance is large, and good forward voltage drop (Vf) characteristics cannot be obtained.

Method used

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  • Sic semiconductor device and method for manufacturing same
  • Sic semiconductor device and method for manufacturing same
  • Sic semiconductor device and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] For the embodiments of the present invention, refer to Figure 8 Be explained. Figure 8 is a cross-sectional view of a Schottky barrier diode (SBD) with a floating limiting ring (FLR) structure.

[0057] On the surface layer (on the side of the low-concentration n-type drift layer 13) of the SiC substrate (high-concentration n-type substrate 12) on which the epitaxial layer (low-concentration n-type drift layer 13) is formed, a channel stopper is formed by ion implantation. An n-type region (not shown) for a layer, a p-type region for a termination structure (p-type impurity ion implantation region 14 ), and a p-type region for an FLR structure 16 . Thereafter, the phosphorous (P) implanted to form the n-type region for the channel stopper layer and the aluminum (Al) implanted to form the p-type region for the terminal structure and the p-type region for the FLR structure 16 are placed in the Activation was performed at a temperature of 1620° C. for 180 seconds in an...

Embodiment 2

[0062] In Example 2, a number of conditions were set and investigated for the heating conditions when a nickel silicide layer containing titanium carbide was formed by heating after laminating a layer containing titanium and nickel on a SiC semiconductor. The sheet resistance of an ohmic electrode manufactured in an argon atmosphere at a heating rate of 10° C. / min under different heating temperature conditions was measured using a rapid annealing apparatus (RTA) equipped with an infrared lamp. The heating hold time was set to 30 minutes. Table 1 shows the measurement results.

[0063] [Table 1]

[0064] Heating temperature (℃)

Sheet resistance (Ω / □)

deviation

1000

0.75

0.15

1050

0.57

0.14

1100

0.42

0.07

1150

0.39

0.06

1200

0.37

0.05

1250

0.36

0.04

1300

0.35

0.039

1350

0.35

0.038

1400

0.35

0.037

1450

0.35

0.036 ...

Embodiment 3

[0074] For embodiment 3 of the present invention, refer to below Figure 11 Be explained. Figure 11 is a cross-sectional view of a Schottky barrier diode (SBD) having a junction barrier Schottky (JBS) structure. Instead of the Schottky barrier diode of Example 1, for Figure 11 The shown Schottky barrier diode (SBD) having the junction barrier Schottky (JBS) structure 17 is also manufactured in the same manner as in the first embodiment. Under the same heating conditions as in Example 1, the same results as in Example 1 were obtained.

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Abstract

Provided is a method for heating a layer containing nickel and titanium on an SiC substrate (1) to form a nickel silicide layer (4) containing titanium carbide, wherein the layer containing nickel and titanium is formed by vapor deposition or sputtering, and the nickel silicide layer (4) is produced by heating at 1100ºC-1350ºC inclusive. During the process, the rate of temperature increase is 10ºC / minute-1350ºC / minute inclusive, and the hold time for heating is 0-120 minutes inclusive. Through these heating conditions, there can be obtained a backside electrode (8) for an SiC semiconductor device, having uniformity and sufficiently low backside contact resistance.

Description

technical field [0001] The present invention relates to a method for manufacturing a SiC semiconductor device and a SiC semiconductor device manufactured by the method. In particular, it relates to a method of forming a uniform back electrode. Background technique [0002] Conventionally, silicon is mainly used as a semiconductor material for semiconductor devices used as power devices, but silicon carbide (SiC), a semiconductor with a wider band gap than silicon, has the following physical properties: thermal conductivity is three times that of silicon, The maximum electric field strength is 10 times higher, and the drift speed of electrons is twice as high. Therefore, as a power device with a high dielectric breakdown voltage and high temperature operation with low loss, various institutions have conducted a lot of research on its application in recent years. The structure of such a power device is mainly a vertical type semiconductor device having a back electrode on the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/329H01L29/47H01L29/872
CPCH01L29/66143H01L29/0619H01L29/872H01L21/0485H01L29/1608H01L21/28518H01L21/28537H01L21/2855H01L29/47
Inventor 今井文一
Owner FUJI ELECTRIC CO LTD