Unlock instant, AI-driven research and patent intelligence for your innovation.

sic semiconductor device and manufacturing method thereof

A device manufacturing method and semiconductor technology, which are used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of inability to obtain forward voltage drop, large contact resistance deviation, etc., and achieve low back contact resistance and small deviation. , Improve the effect of back contact resistance

Active Publication Date: 2017-09-22
FUJI ELECTRIC CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] However, the ohmic electrodes obtained by the prior art such as the above-mentioned Patent Document 3 and the above-mentioned Patent Document 4 have problems in that the variation in contact resistance is large, and good forward voltage drop (Vf) characteristics cannot be obtained.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • sic semiconductor device and manufacturing method thereof
  • sic semiconductor device and manufacturing method thereof
  • sic semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] For the embodiments of the present invention, refer to Figure 8 Be explained. Figure 8 is a cross-sectional view of a Schottky barrier diode (SBD) with a floating limiting ring (FLR) structure.

[0057] On the surface layer (on the side of the low-concentration n-type drift layer 13) of the SiC substrate (high-concentration n-type substrate 12) on which the epitaxial layer (low-concentration n-type drift layer 13) is formed, a channel stopper is formed by ion implantation. An n-type region (not shown) for a layer, a p-type region for a termination structure (p-type impurity ion implantation region 14 ), and a p-type region for an FLR structure 16 . Thereafter, the phosphorous (P) implanted to form the n-type region for the channel stopper layer and the aluminum (Al) implanted to form the p-type region for the terminal structure and the p-type region for the FLR structure 16 are placed in the Activation was performed at a temperature of 1620° C. for 180 seconds in an...

Embodiment 2

[0062] In Example 2, a number of conditions were set and investigated for the heating conditions when a nickel silicide layer containing titanium carbide was formed by heating after laminating a layer containing titanium and nickel on a SiC semiconductor. The sheet resistance of an ohmic electrode manufactured in an argon atmosphere at a heating rate of 10° C. / min under different heating temperature conditions was measured using a rapid annealing apparatus (RTA) equipped with an infrared lamp. The heating hold time was set to 30 minutes. Table 1 shows the measurement results.

[0063] [Table 1]

[0064] Heating temperature (℃)

Sheet resistance (Ω / □)

deviation

1000

0.75

0.15

1050

0.57

0.14

1100

0.42

0.07

1150

0.39

0.06

1200

0.37

0.05

1250

0.36

0.04

1300

0.35

0.039

1350

0.35

0.038

1400

0.35

0.037

1450

0.35

0.036

1500

0.35

0.035 ...

Embodiment 3

[0074] For embodiment 3 of the present invention, refer to below Figure 11 Be explained. Figure 11 is a cross-sectional view of a Schottky barrier diode (SBD) having a junction barrier Schottky (JBS) structure. Instead of the Schottky barrier diode of Example 1, for Figure 11 The shown Schottky barrier diode (SBD) having the junction barrier Schottky (JBS) structure 17 is also manufactured in the same manner as in the first embodiment. Under the same heating conditions as in Example 1, the same results as in Example 1 were obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

In a method which heats a layer including nickel and titanium on a SiC substrate (1) to form a nickel silicide layer (4) including titanium carbide, the layer including nickel and titanium is formed by vapor deposition or sputtering. The nickel silicide layer (4) is heated at a temperature that is equal to or higher than 1100° C. and equal to or less than 1350° C. to generate the layer including nickel and titanium. At that time, the rate of temperature increase is equal to greater than 10° C. / minute and equal to or less than 1350° C. / minute and a heating duration is equal to or more than 0 minute and equal to or less than 120 minutes. These heating conditions make it possible to obtain a homogeneous rear surface electrode (8) for a SiC semiconductor device which has sufficiently low rear surface contact resistance.

Description

technical field [0001] The present invention relates to a method for manufacturing a SiC semiconductor device and a SiC semiconductor device manufactured by the method. In particular, it relates to a method of forming a uniform back electrode. Background technique [0002] Conventionally, silicon is mainly used as a semiconductor material for semiconductor devices used as power devices, but silicon carbide (SiC), a semiconductor with a wider band gap than silicon, has the following physical properties: thermal conductivity is three times that of silicon, The maximum electric field strength is 10 times higher, and the drift speed of electrons is twice as high. Therefore, as a power device with a high dielectric breakdown voltage and high temperature operation with low loss, various institutions have conducted a lot of research on its application in recent years. The structure of such a power device is mainly a vertical type semiconductor device having a back electrode on the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/329H01L29/47H01L29/872
CPCH01L21/0485H01L29/0619H01L29/1608H01L29/66143H01L29/872H01L21/28518H01L21/28537H01L21/2855H01L29/47
Inventor 今井文一
Owner FUJI ELECTRIC CO LTD