Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface passivation technology capable of improving performance of copper indium gallium selenium thin-film solar cells

A solar cell, copper indium gallium selenide technology, applied in the field of solar cells, can solve the problems of human environmental pollution, air pollution, waste of natural resources and the like

Inactive Publication Date: 2014-11-12
SUZHOU RUISHENG SOLAR ENERGY TECH
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the use of fossil fuels such as coal, oil and natural gas will also bring a series of environmental problems: the global greenhouse effect makes the global temperature rise and the sea level rises; air pollution; drought, desertification; exhaust gas, waste , A large amount of waste liquid is discharged, the natural resources are seriously wasted, and the human environment is seriously polluted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface passivation technology capable of improving performance of copper indium gallium selenium thin-film solar cells
  • Surface passivation technology capable of improving performance of copper indium gallium selenium thin-film solar cells
  • Surface passivation technology capable of improving performance of copper indium gallium selenium thin-film solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] In order to make the purpose, technical solution and advantages of the present invention more clear, the following will be described in detail in combination with specific examples and with reference to the accompanying drawings.

[0021] 1. Wash the soda-lime glass substrate repeatedly in the cleaning agent, then soak it in deionized water, acetone and isopropanol solution and ultrasonic for 10-30 minutes each, and finally dry it in the oven

[0022] 2. Put the cleaned glass substrate into a vacuum chamber to sputter the substrate metal Mo layer as the back electrode. The working air pressure during sputtering is 5mtorr, and the sputtering power is 500W.

[0023] 3. A water bath method is used to grow a CdS layer on a glass substrate deposited with a Mo layer. The method is as follows: Put the container mixed with 1-2.5M ammonia water, 0.001-0.01M cadmium sulfate, and 0.05-0.5M thiourea solution into a water bath and heat for 2-10 minutes. At this time, cadmium sulfid...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

Copper indium gallium selenium (CIGS for short) thin-film solar cells have many advantages, and are one part, with the most development potential, of the solar cell technology. The invention relates to a method for passivating the interface between a back electrode and absorption layer CIGS in each CIGS solar cell, recombination of carriers on the interface is restrained, and thus the performance of the CIGS device is improved. The method includes the steps that after a solution with cadmium sulfate, thiourea and ammonia water mixed is heated for 2 min to 10 min, a substrate with a back electrode layer deposited is placed in the solution, heating is continued for 2 min to 10 min, and then a cadmium sulfide layer containing large particles is grown; a silicon dioxide layer is grown on the cadmium sulfide layer to serve as an insulation passivation layer, the large particles of cadmium sulfide are removed with an ultrasonic method, and then a passivation layer with nanostructure holes is formed; a CIGS absorption layer is further grown on the passivation layer, and then the absorption layer and the back electrode can make point contact. The open-circuit voltage and the fill factor of the CIGS solar cells prepared with the technology are increased, and the photoelectric conversion efficiency of the CIGS solar cells prepared with the technology is improved.

Description

technical field [0001] The invention belongs to the field of solar cells and relates to a copper indium gallium selenium thin film solar cell device. Background technique [0002] All energy comes from energy, and human beings cannot live without energy. Energy is the main basis for human survival, life and development. After entering the 21st century, the energy resources that can be developed by human beings' current technology will face a serious shortage crisis. Today's fossil fuel resources such as coal, oil and natural gas are increasingly depleted, and they can only last for decades. Therefore, it is necessary to find sustainable alternative new energy sources. In addition, the use of fossil fuels such as coal, oil and natural gas will also bring a series of environmental problems: the global greenhouse effect makes the global temperature rise and the sea level rises; air pollution; drought, desertification; exhaust gas, waste , A large amount of waste liquid is di...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0749
CPCH01L31/02167H01L31/0749H01L31/1868Y02E10/541Y02P70/50
Inventor 刘德昂谢承智钱磊章婷杨一行冯宗宝
Owner SUZHOU RUISHENG SOLAR ENERGY TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com