Gallium Nitride-based Enhanced Depletion-Mode Heterojunction Field-Effect Transistor with Buried Gate Structure

Abstract

The invention discloses a gallium nitride-based enhanced depletion heterojunction field effect transistor with a buried gate structure, which mainly consists of a substrate, an aluminum indium gallium nitrogen buffer layer, a buried gate, a buried gate dielectric layer, and a nitride Gallium channel layer, aluminum indium gallium nitride barrier layer, gate dielectric layer, source and drain on the aluminum indium gallium nitride barrier layer, gate on the gate dielectric layer, the source and drain are connected with aluminum The InGaN barrier layer forms an ohmic contact, the gate and the gate dielectric layer form a Schottky contact, the buried gate dielectric layer and the buried gate are both located in the AlInGaN buffer layer, and the buried gate is located in the buried in the gate dielectric layer. By biasing the buried gate separately, and according to different biases of the buried gate, the threshold voltage of the device can be adjusted; when the buried gate is at a negative bias, the buried gate depletes the two-dimensional electron gas of the gallium nitride channel layer, making the device Realize enhanced work; when the buried gate is at zero bias or positive bias, there is a two-dimensional electron gas in the gallium nitride channel layer, which makes the device realize depletion work.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a gallium nitride-based enhanced depletion heterojunction field effect transistor with a buried gate structure. Background technique [0002] Gallium nitride (GaN)-based heterojunction field effect transistor has excellent characteristics such as large band gap, high critical breakdown electric field, high electron saturation velocity, good thermal conductivity, radiation resistance and good chemical stability. At the same time, GaN ( GaN) materials can form a two-dimensional electron gas heterojunction channel with high concentration and high mobility with materials such as aluminum gallium nitride (ALGaN), so it is especially suitable for high-voltage, high-power and high-temperature applications, and is the most potential for electronic applications one of the transistors. [0003] figure 1 It is a schematic diagram of the structure of a common GaN-based heterojunction f...

AI Technical Summary

Problems solved by technology

However, the P-type acceptor Mg activation energy of GaN materials is very high, and it is difficult to realize high-quality P-type GaN materials. At the same time, P-type doping will also affect the reliability of the material.

Images