A flexible high-light-trapping radial-junction heterojunction high-efficiency crystalline silicon solar cell and its preparation method

A solar cell and heterojunction technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of conversion efficiency, open-circuit voltage drop, short-circuit current density reduction, and technical route difficulty, so as to improve conversion efficiency and conversion efficiency. The effect of high and low recombination probability

Active Publication Date: 2016-08-17
南京萨科勒纳米科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The technical route is difficult and the process is lengthy and complicated; in addition, on a thin flexible crystalline silicon substrate, the technical process of making the battery structure is incompatible with conventional non-flexible crystalline silicon batteries, resulting in high manufacturing costs
[0004] The thickness of flexible crystalline silicon is relatively thin (5-50um), and the absorption of long-wavelength photons in the solar spectrum is relatively weak, resulting in a relatively low short-circuit current density, and its conversion efficiency, open-circuit voltage, etc. are compared with conventional thickness ( >180um) crystalline silicon cells have declined

Method used

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  • A flexible high-light-trapping radial-junction heterojunction high-efficiency crystalline silicon solar cell and its preparation method
  • A flexible high-light-trapping radial-junction heterojunction high-efficiency crystalline silicon solar cell and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Example 1, the front side is fabricated to form a columnar array structure with high light trapping property, and the front side is protected by etching the back side:

[0026] 1) A p-type monocrystalline silicon wafer with a thickness of 200±20um and a resistivity of 1-3Ω·cm is used as the substrate.

[0027] 2) Perform conventional alkali texturing on the substrate.

[0028] 3) Using contact ultraviolet lithography to form a circular array of holes on the front photoresist; vapor-deposit metal chromium of 0.1-10um on it, and form a circular array of chromium by stripping the photoresist; use metal chromium The circular array is a mask plate, which is etched by fluorine-based RIE to form a columnar array of crystalline silicon; the surface damage of metal chromium and silicon is removed by chemical wet method; A crystalline silicon columnar array structure with a height of 3-10um.

[0029] 4) PECVD deposits 300-600nm SiNx on the front side as a protective layer, and ...

Embodiment 2

[0038] Example 2, the front is fabricated until the TCO / metal electrode is deposited, the front is protected and the back is etched:

[0039] 1) An n-type monocrystalline silicon wafer with a thickness of 200±20um and a resistivity of 50-500Ω·cm is used as the substrate.

[0040] 2) Perform conventional chemical polishing on the substrate.

[0041] 3) Using contact ultraviolet lithography to form a circular array on the front photoresist; electron beam evaporation of 5-500nm metal silver on it, and forming a silver circular hole-shaped array by stripping the photoresist; The metal silver in the circular hole array is used as a catalytic aid, and chemical wet etching is performed to form a columnar array of crystalline silicon; the surface damage of metallic silver and silicon is removed by chemical wet method; finally, a diameter of 2-20um and a period of 4- 40um, crystalline silicon columnar array structure with a height of 3-10um.

[0042] 4) The front PECVD first deposits...

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PUM

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Abstract

The invention discloses a manufacturing method of a flexible high-light-trapping-property radial-junction heterojunction efficient crystalline silicon solar cell. The method comprises the following steps: (1) preparing a crystalline silicon chip of which the thickness is 80-500 microns and the resistivity is 0.1-1,000 ohm.cm for serving as a substrate; (2) making a solar cell front side structure or semi-finished product front side structure on the crystalline silicon substrate; (3) protecting the made front side structure, and thinning the substrate from the back side: making a protective layer of 100 nanometers to 100 microns on the made solar cell front side structure or semi-finished product front side structure or making a border on the back side at the same time for protecting, thinning the crystalline silicon substrate from the back side by 5-50 microns; removing the protective layer or removing the protective layer together with a back side border protective layer; (4) making a back side structure: depositing a heterojunction silicon-based passivation layer of 2-100 nanometers and a back side field of 2-50 nanometers on the back side. By adopting a heterojunction structure, the conversion efficiency, open-circuit voltage, short-circuit current and the like of the cell are increased greatly; since the crystalline silicon with excellent photoelectric performance is taken as an adsorption base region of a flexible cell, high conversion efficiency is ensured.

Description

technical field [0001] The invention relates to a solar cell and a preparation method thereof, in particular to a flexible high-light trapping radial junction heterojunction high-efficiency crystalline silicon solar cell and a preparation method thereof. technical background [0002] Flexible solar cells based on amorphous silicon have low conversion efficiency due to the constraints of material quality and their own photoelectric properties. [0003] The technical route of flexible solar cells based on crystalline silicon is to first use methods such as epitaxial growth to prepare flexible crystalline silicon substrates, and then complete the preparation of cells on it. As a result, the technical route is difficult and the process is lengthy and complicated; in addition, on a thin flexible crystalline silicon substrate, the technical process of making the battery structure is incompatible with conventional non-flexible crystalline silicon batteries, resulting in high manufa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/072H01L31/036H01L31/0216
CPCH01L31/02021H01L31/02363H01L31/074Y02E10/50Y02P70/50
Inventor 余林蔚李成栋
Owner 南京萨科勒纳米科技有限公司
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