Copper-zinc-tin sulfide thin film preparation method

A copper-zinc-tin-sulfur and thin-film technology, which can be used in final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc.
CN104201236AInactive Publication Date: 2014-12-10RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
RESEARCH INSTITUTE OF TSINGHUA UNIVERSITY IN SHENZHEN
Publication Date
2014-12-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention relates to a copper-zinc-tin sulfide thin film preparation method. The preparation method includes the deposition of a copper ion and tin ion thin film compound on the surface of a substrate through a successive ion layer adsorption reaction method, the deposition of a zinc ion thin film compound and final high temperature sulfuration treatment for obtaining a zinc tin sulfide thin film. According to the preparation method, the problem of uneven film components due to ion competition in a copper ion, tin ion and zinc ion co-adsorption process can be solved, and the proportion of every component in the copper-zinc-tin sulfide thin film can be effectively controlled for the preparation of the single-phase copper-zinc-tin sulfide thin film.
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Description

technical field

[0001] The invention relates to a method for preparing a semiconductor copper-zinc-tin-sulfur thin film, which belongs to the field of thin-film solar cells. Background technique

[0002] The new energy of photovoltaic power generation has developed rapidly in recent years and has attracted worldwide attention. It is expected to become an effective way to solve the energy crisis and environmental crisis. Current solar cells are mainly silicon solar cells. However, the light-absorbing layer that silicon solar cells rely on is monocrystalline silicon or microcrystalline silicon, which is an indirect bandgap semiconductor material that requires a thicker film thickness to absorb a broad solar spectrum, and the cost of monocrystalline silicon is high.

[0003] Quaternary compound copper zinc tin sulfur (Cu 2 ZnSnS 4 , referred to as CZTS) is a direct band gap P-type semiconductor material, the band gap matches the best band gap (1.5eV) value of the solar cell,...

Claims

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