Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

N type PERC crystalline silicon solar cell and preparation method thereof

A technology of solar cells and crystalline silicon, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as scarcity of technical solutions, and achieve the effects of improving technical assurance, convenient operation, and good economic benefits

Inactive Publication Date: 2014-12-17
ALTUSVIA ENERGY TAICANG
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the back passivation battery technology is relatively mature for P-type batteries, but the technical solutions for industrial production of N-type batteries are still relatively scarce.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N type PERC crystalline silicon solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] In this embodiment, a 156mm N-type single crystal silicon wafer is used as the base material to remove damage, texture, and clean the N-type silicon wafer; a P-type emitter junction is formed by using tubular boron diffusion, and the diffusion resistance is controlled at 80 ohm / sq. The borosilicate glass naturally formed by diffusion is used as the front mask of the battery to achieve the purpose of removing the reflective junction and polishing on the back of the silicon wafer. Clean with 1% hydrofluoric acid solution. An aluminum oxide passivation film with a thickness of 15nm is symmetrically grown on the front and back of the silicon wafer, and a silicon nitride anti-reflection film with a refractive index of 2.10 and a thickness of 68nm is grown on the front of the silicon wafer by PECVD. Print silver-aluminum paste grid lines on the front side of the silicon wafer and sinter the metal to metallize the electrodes. On the back side of the silicon wafer, use a line a...

Embodiment 2

[0045] In this embodiment, a 156mm N-type single crystal silicon wafer is used as the base material to remove damage, texture, and clean the N-type silicon wafer; a P-type emitter junction is formed by using tubular boron diffusion, and the diffusion resistance is controlled at 45 ohm / sq. The borosilicate glass naturally formed by diffusion is used as the front mask of the battery to achieve the purpose of removing the reflective junction and polishing on the back of the silicon wafer. Clean with 1% hydrofluoric acid solution. An aluminum oxide passivation film with a thickness of 2nm is symmetrically grown on the front and back of the silicon wafer, and a silicon nitride anti-reflection film with a refractive index of 1.9 and a thickness of 90nm is grown on the front of the silicon wafer by PECVD. The front side of the silicon wafer is printed with silver-aluminum paste grid lines and sintered metal to metallize the electrodes. On the back of the silicon wafer, the aluminum o...

Embodiment 3

[0049]In this embodiment, a 156mm N-type single crystal silicon wafer is used as the base material to remove damage, texture, and clean the N-type silicon wafer; a P-type emitter junction is formed by using tubular boron diffusion, and the diffusion resistance is controlled at 140 ohm / sq. The borosilicate glass naturally formed by diffusion is used as the front mask of the battery to achieve the purpose of removing the reflective junction and polishing on the back of the silicon wafer. Clean with 1% hydrofluoric acid solution. An aluminum oxide passivation film with a thickness of 40nm is symmetrically grown on the front and back of the silicon wafer, and a silicon nitride antireflection film with a refractive index of 2.3 and a thickness of 50nm is grown on the front of the silicon wafer by PECVD. Silver-aluminum paste grid lines are printed on the front side of the silicon wafer and the metal is sintered to metallize the electrodes. On the back side of the silicon wafer, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an N type PERC crystalline silicon solar cell and preparation method thereof, the N type silicon sheet having a specific resistance of 0.5-12ohm is used as the base body, and the front side is provided with the boron diffusion P type emitter junction and silk-screen printing argentalium electrode, and the reverse side is orderly provided with aluminium oxide passive film and evaporation aluminum layer from the upper part to the lower part, the aluminium oxide passive film is provided with the dot matrix or line shape hollow, the evaporation aluminum layer contacts the silicon base body through the aluminium oxide passive film. Some silicon base is naked for the hollow of the aluminium oxide passive film, and the silicon base body partially contacts the evaporation aluminum layer. The back passivation is combined with the metallized area local contact, the double deposit for aluminium oxide is adopted for simplifying the step of depositing the film at the back, the negative fixed charge of aluminium oxide at the back can induce a layer of inversion layer on the N type silicon base body for exhausting the majority of carriers on the surface for getting good back surface passivation effect. The efficiency is high and the cost is low, the preparation method is simple, the operation is convenient and the economic benefit is good.

Description

[0001] technical field [0002] The invention belongs to the technical field of photovoltaics, and in particular relates to an N-type PERC crystalline silicon solar cell and a preparation method thereof. Background technique [0003] Compared with P-type silicon wafers, N-type silicon wafers have a higher minority carrier lifetime and are less sensitive to metal impurities. In addition, boron atoms that are not artificially doped in the matrix will not form boron-oxygen recombination pairs. , so N-type cells have no light-induced attenuation. The above reasons make N-type silicon wafers the darling of crystalline silicon cells in colleges and universities, but there are advantages and disadvantages. The process of N-type silicon wafers is relatively complicated and the preparation cost is relatively high. It is still a P-type battery. [0004] At present, the back passivation battery technology is relatively mature for P-type batteries, but the technical solutions for indus...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/068H01L31/0216H01L31/18
CPCH01L31/02168H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 夏正月高艳涛崔会英钱亮何锐张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com