Gallium Nitride-Based Heterojunction Field-Effect Transistor with Internal Composite Field Plate Structure

Abstract

The present invention relates to semiconductor technology. The invention solves the problem of low withstand voltage of the existing gallium nitride-based heterojunction field effect transistor, and provides a gallium nitride-based heterojunction field effect transistor with an internal compound field plate structure, and its technical scheme can be summarized For: Compared with the existing common GaN HFET (gallium nitride-based heterojunction field effect transistor), the gallium nitride-based heterojunction field effect transistor with internal composite field plate structure of the present invention also has internal composite field plate Structure, the compound field plate structure in the body is composed of electrodes and insulating dielectric layers. The beneficial effect of the invention is that the withstand voltage of the device is increased, and the invention is suitable for GaN-based heterojunction field effect transistors.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to gallium nitride (GaN)-based heterojunction field effect transistor strained N-channel metal oxide semiconductor field effect transistor (NMOSFET). Background technique [0002] Gallium nitride (GaN)-based heterojunction field effect transistor (HFET) has excellent characteristics such as large band gap, high critical breakdown electric field, high electron saturation velocity, good thermal conductivity, radiation resistance and good chemical stability. GaN materials can form two-dimensional electron gas heterojunction channels with high concentration and high mobility with materials such as aluminum gallium nitride (AlGaN), so they are especially suitable for high-voltage, high-power and high-temperature applications, and are the most suitable for power electronics applications. One of the most promising transistors. [0003] figure 1 It is a schematic structural diagram of a common ...

AI Technical Summary

Problems solved by technology

Although this technology has not been realized yet, theoretical analysis shows that the direct contact between the metal electrode and the semiconductor cannot reduce the leakage current. On the contrary, because of its good conductivity, it is easier to form a buffer layer leakage channel, thereby reducing the breakdown voltage of the device.

In addition, the distance between the internal electrode and the drain is relatively close, and there is only a PN junction structure in the middle, and its reverse leakage is very large. If the internal electrode is connected to the source or gate, the withstand voltage capability of the entire device is only equivalent to Compared with ordinary GaN PN junction

In addition to the impact on the breakdown voltage described in the above two points, this structure cannot allow a higher concentration of N-type channel doping to reduce the on-resistance, so it is difficult to improve the figure of merit (FOM) of the device

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