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Semiconductor lasers with low operating voltage and high power conversion efficiency

A technology of working voltage and conversion efficiency, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of high working voltage and low power conversion efficiency, reduce the working voltage, reduce the recombination rate, and suppress the generation of dark line defects Effect

Active Publication Date: 2017-08-04
Shandong Huaguang Optoelectronics Co. Ltd.
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Aiming at the problems of high operating voltage and low power conversion efficiency of existing (Al)GaInP / GaAsP structure semiconductor lasers, the present invention provides a semiconductor laser with low operating voltage and high power conversion efficiency, and the laser also has high reliability and maximum power output

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  • Semiconductor lasers with low operating voltage and high power conversion efficiency
  • Semiconductor lasers with low operating voltage and high power conversion efficiency
  • Semiconductor lasers with low operating voltage and high power conversion efficiency

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Experimental program
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Embodiment 1

[0037] In this embodiment, the substrate 1 is a Si-doped GaAs (100) single crystal substrate with a 15° bias to the crystal orientation, and the doping concentration is 2×10 18 cm -3 ; The buffer layer 2 is Si-doped GaAs with a thickness of 300nm, and the doping concentration is 1×10 18 cm -3 ; The lower confinement layer 3 is Si doped with a thickness of 1.2 μm (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P, the doping concentration is 1×10 18 cm -3 ; The lower waveguide layer 4 is weak N-type Si-doped Ga with a thickness of 500nm 0.5 In 0.5 P, the doping concentration is 8×10 16 cm -3 ; The quantum well 5 is GaAsP with a thickness of 10nm; the upper waveguide layer 6 is non-doped Ga with a thickness of 300nm 0.5 In 0.5 P; The band gap gradient transition layer 7 is (Al 0.05 Ga 0.95 ) 0.5 In 0.5 The P composition gradually changes to (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P; the upper confinement layer 8 is Mg doped with a thickness of 1.2 μm (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P, the d...

Embodiment 2

[0040] The difference between this embodiment and Embodiment 1 is that the bandgap transition layer 10 has two layers, which are Ga 0.5 In 0.5 P and Ga with a thickness of 20nm 0.75 In 0.25 As 0.5 P 0.5 . The conduction band structure of the P-type region of the semiconductor laser of this embodiment is as image 3 shown.

[0041] Ga 0.5 In 0.5 As a band gap transition layer, P can reduce the energy band discontinuity value of the heterojunction interface. But Ga 0.5 In 0.5 The bandgap difference between P and GaAs is still close to 0.5eV, especially its valence band is above 0.3eV. Due to the limitation of the material system, Ga 0.5 In 0.5 The P / GaAs interface cannot use a bandgap gradient transition layer, and can only achieve a step change in the bandgap by inserting an intermediate bandgap layer to reduce its energy band discontinuity. Ga 0.75 In 0.25 As 0.5 P 0.5 The band gap is about 1.66eV, which happens to be in the Ga 0.5 In 0.5 The gap between P ...

Embodiment 3

[0043] The difference between this embodiment and Embodiment 1 is that the bandgap transition layer 10 has four layers, which are respectively Ga 0.5 In 0.5 P, Ga with a thickness of 20nm 0.625 In 0.375 As 0.25 P 0.75 , Ga with a thickness of 20nm 0.75 In 0.25 As 0.5 P 0.5 and Ga with a thickness of 20nm 0.875 In 0.125 As 0.75 P 0.25 . The conduction band structure of the P-type region of the semiconductor laser of this embodiment is as Figure 4 shown. Ga 0.5 In 0.5 A three-layer GaInAsP structure is inserted between P and GaAs, which are Ga 0.625 In 0.375 As 0.25 P 0.75 (1.77eV), Ga 0.75 In 0.25 As 0.5 P 0.5 (1.66eV) and Ga 0.875 In 0.125 As 0.75 P0.25 (1.54eV), which can further reduce the Ga 0.5 In 0.5 Band discontinuity values ​​at the P / GaAs heterojunction interface.

[0044] The semiconductor lasers in the above three embodiments all use the bandgap graded structure to reduce the energy band discontinuity value of the AlGaInP / GaInP heterojun...

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Abstract

A semiconductor laser with low operating voltage and high power conversion efficiency. From bottom to top, there are substrate, buffer layer, lower confinement layer, lower waveguide layer, quantum well, upper waveguide layer, upper confinement layer, bandgap transition layer and The ohmic contact layer, between the upper waveguide layer and the upper confinement layer and between the upper confinement layer and the bandgap transition layer are all provided with a bandgap gradient transition layer to reduce the discontinuous value of the energy band at each heterojunction in the P-type region, Lower the barrier height that hinders carrier injection. The use of aluminum-free materials and low-aluminum component materials can reduce the internal loss of semiconductor lasers and increase their output power. The bandgap gradient transition layer and the bandgap step-change transition layer are used at the interface of each heterojunction in the P-type region to reduce the energy band discontinuity value of the heterojunction, thereby reducing the operating voltage of the semiconductor laser. Therefore, the semiconductor laser provided by the invention can work stably at high output power and has high power conversion efficiency.

Description

technical field [0001] The invention relates to a semiconductor laser, which has low operating voltage and high power conversion efficiency, and belongs to the technical field of semiconductor lasers. Background technique [0002] High-power semiconductor lasers are widely used in pumping solid-state lasers, material processing, and laser medical treatment due to their compact structure, low cost, and easy control of the optical field. In these applications, semiconductor lasers are required to have excellent reliability under long-term high power output conditions. For semiconductor lasers, the main factors that limit its output power and affect its reliability are the scattering and absorption of photons by internal defects in the material, the rise of the temperature in the active region causes the overflow of carriers, and the non-radiative recombination of carriers at high power densities. A large amount of heat caused the cavity surface to be burned. Therefore, when ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/323H01S5/20
Inventor 朱振张新李沛旭蒋锴徐现刚
Owner Shandong Huaguang Optoelectronics Co. Ltd.