A kind of corrosion-resistant bonding copper wire and preparation method thereof

A copper wire bonding, corrosion-resistant technology, applied in the direction of electrical components, circuits, electrical solid devices, etc., can solve the problems of accelerating copper wires, easy migration of grain boundaries, unsuitable for high density, low radian and multi-layer packaging, etc.

Inactive Publication Date: 2016-08-31
HENAN POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Bonding copper wires are gradually adopted in microelectronic packaging due to their excellent mechanical properties, electrical properties and low cost factors, but the application of existing copper wires Because it is easy to corrode (the oxidation of bonding copper wire directly leads to insufficient connection strength of solder joints or virtual welding), the heat-affected zone is too large to meet the needs of low-arc and multi-layer packaging technology, and improve the corrosion resistance (oxidation resistance) of copper wires. , Reducing the length of the heat-affected zone during the soldering process can speed up the application of copper wires in microelectronic packaging
[0003]The existing bonding copper wire uses high-purity single-crystal copper as raw material, because the oxidation of high-purity single-crystal copper has obvious orientation, non-close-packed ( 100) The interface energy on the crystal s

Method used

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  • A kind of corrosion-resistant bonding copper wire and preparation method thereof

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Comparison scheme
Effect test

Embodiment 1

[0013] A specific preparation method of bonding copper wire. Wherein the bonding copper wire raw material is composed of high-purity copper with a purity of not less than 99.9995%, pure Li with a purity of not less than 99.9%, and Ce with a purity of not less than 99.0%. The preparation method is:

[0014] (1) To prepare the bonding copper wire raw material, a vacuum intermediate frequency furnace is used to prepare the bonding copper wire raw material, and the crucible used is zirconia, magnesium oxide or alumina; the preparation process of the bonding copper wire raw material is as follows:

[0015] 1) Weigh 970g of high-purity copper (accounting for 49.4% of the total amount of high-purity copper), and use 10g (accounting for 0.5% of the total amount of high-purity copper) of high-purity copper foil to wrap 20g of pure Li tightly;

[0016] 2) Vacuum the furnace, the vacuum degree is higher than 6×10 -2 Pa, and two high-purity Ar After cleaning, filled with high-purity Ar...

Embodiment 2

[0021] A method for preparing copper bonding wire. Wherein the bonding copper wire raw material is composed of high-purity copper with a purity of not less than 99.9995%, pure Li with a purity of not less than 99.9%, and Ce with a purity of not less than 99.0%. The preparation method is:

[0022] (1) To prepare the bonding copper wire raw material, a vacuum intermediate frequency furnace is used to prepare the bonding copper wire raw material, and the crucible used is zirconia, magnesium oxide or alumina; the preparation process of the bonding copper wire raw material is as follows:

[0023] 1) Weigh 970g of high-purity copper (accounting for 66.2% of the total amount of high-purity copper), and use 10g (accounting for 0.6% of the total amount of high-purity copper) of high-purity copper foil to wrap 20g of pure Li tightly;

[0024] 2) Vacuum the furnace, the vacuum degree is higher than 6×10 -2 Pa, and two high-purity Ar After cleaning, filled with high-purity Ar After r...

Embodiment 3

[0029] A specific preparation method of copper bonding wire.

[0030] Wherein the bonding copper wire raw material is composed of high-purity copper with a purity of not less than 99.9995%, pure Li with a purity of not less than 99.9%, and Ce with a purity of not less than 99.0%. The preparation method is:

[0031] (1) To prepare the bonding copper wire raw material, a vacuum intermediate frequency furnace is used to prepare the bonding copper wire raw material, and the crucible used is zirconia, magnesium oxide or alumina; the preparation process of the bonding copper wire raw material is as follows:

[0032] 1) Weigh 970g of high-purity copper (accounting for 56.5% of the total amount of high-purity copper), and use 10g (accounting for 0.58% of the total amount of high-purity copper) of high-purity copper foil to wrap 20g of pure Li tightly;

[0033] 2) Vacuum the furnace, the vacuum degree is higher than 6×10 -2 Pa, and two high-purity Ar After cleaning, filled with high...

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Abstract

The invention relates to a corrosion-resistant bonding copper wire and a preparation method thereof. The bonding copper wire has good corrosion resistance (oxidation resistance) and a short heat-affected zone length, and the length of the heat-affected zone is reduced compared with ordinary bonding copper wires It can meet the requirements of high-density, multi-layer packaging and LED packaging, and can be widely used in multi-pin, high-density integrated circuit packaging. The weight percentage of each component of the bonding copper wire is: Li 0.008-1.0wt%, Ce 0.3-0.5wt%, Cu balance. The preparation method is as follows: a. Copper-Li master alloy is made, and Li wrapped with copper foil is added after the copper liquid is melted and clear; b. Bonded copper wire raw materials are made; c. Bonded copper wire is prepared, and before heat treatment Clean the surface of the bonding copper wire.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and mainly relates to a high-performance bonding copper wire with good corrosion resistance and short heat-affected zone length and a preparation method thereof. Background technique [0002] Bonding copper wire is gradually adopted in microelectronics packaging due to its excellent mechanical properties, electrical properties and low cost factors, but the application of existing copper wires is easy to corrode (the oxidation of bonding copper wire directly leads to Insufficient connection strength or virtual soldering), the heat-affected zone is too large to meet the needs of low-arc and multi-layer packaging technology, improving the corrosion resistance (oxidation resistance) performance of copper wires, reducing the length of the heat-affected zone during the welding process can speed up the copper wire applications in microelectronic packaging. [0003] Existing bonding copp...

Claims

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Application Information

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IPC IPC(8): C22C9/00C22C1/03
CPCH01L2224/45147
Inventor 曹军范俊玲李艳梅吴雪峰
Owner HENAN POLYTECHNIC UNIV
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