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A method for preparing nanoscale field effect transistors

A field effect transistor, nanoscale technology, applied in nanotechnology, nanotechnology, nanotechnology for information processing, etc., can solve the problems of increasing device fluctuations and parasitic effects, difficult to obtain, etc., to reduce parasitic and The effect of fluctuation, low cost and simple process

Active Publication Date: 2017-06-06
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is difficult to obtain gate lines with uniform width in the height direction in the existing technology, which will increase the fluctuation and parasitic effect of the device

Method used

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  • A method for preparing nanoscale field effect transistors
  • A method for preparing nanoscale field effect transistors
  • A method for preparing nanoscale field effect transistors

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Embodiment Construction

[0038] Taking a silicon substrate as an example, the specific implementation of the method for preparing a nanoscale field effect transistor by epitaxial growth on an SOI substrate of the present invention is as follows:

[0039] 1. Thinned SOI silicon substrate

[0040] a) The thickness of the SOI silicon substrate is Such as figure 1 shown;

[0041] b) Dry oxygen oxidation forms a sacrificial oxide layer on the SOI silicon substrate Thinning the silicon film to Such as figure 2 shown;

[0042] c) HF solution wet etching to remove the sacrificial oxide layer Such as image 3 shown;

[0043] 2. Source-drain doping;

[0044] a) Ion implantation injecting P, the dose is 1×10 15 cm -2 , doping the SOI silicon substrate;

[0045] b) Rapid thermal annealing (RTP) at 950°C for 5s for impurity activation annealing, such as Figure 4 shown;

[0046] 3. Silicon thin line structure;

[0047] a) Electron beam lithography forms a thin line pattern with a width of 20nm...

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Abstract

The invention discloses a method for preparing a nanoscale field effect transistor, which belongs to the technical field of large-scale integrated circuit manufacturing. The core of the method is to prepare nanoscale field effect transistors by epitaxial growth on SOI substrates. The present invention can precisely control the material and shape of nanoscale device channels by using epitaxial technology, and further optimize device performance; secondly, by realizing different channel The channel doping type and doping concentration can flexibly adjust the threshold voltage to meet the needs of different IC designs; and a gate structure with a consistent width in the height direction can be obtained to reduce the parasitic and fluctuation of the device, and at the same time it can be well Compatible with the CMOS gate-last process, the process is simple, the cost is low, and it can be applied to the integration of large-scale semiconductor devices in the future.

Description

technical field [0001] The invention relates to a method for preparing a nanoscale field effect transistor by epitaxial growth on an SOI substrate, and belongs to the technical field of large-scale integrated circuit manufacturing. Background technique [0002] Today's semiconductor manufacturing industry is developing rapidly under the guidance of Moore's Law. While continuously improving the performance and integration density of integrated circuits, it is necessary to reduce power consumption as much as possible. The preparation of ultra-short trench devices with high performance and low power consumption is the focus of the future semiconductor manufacturing industry. After entering the 22nm technology node, in order to overcome the above problems, multi-gate structure devices have become a hot spot in today's semiconductor devices. Intel has applied this structure in last year's 22nm products, and showed the advantages of high performance and low power consumption. Am...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336
CPCH01L29/0665H01L29/66477B82Y10/00H01L29/41725H01L29/41791H01L29/42392H01L29/775H01L29/0673H01L29/78696
Inventor 黎明樊捷闻杨远程宣浩然黄如
Owner PEKING UNIV
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