Antistatic filtering material used at middle and high temperatures and preparation method thereof

A filter material and anti-static technology, applied in the field of industrial textiles, can solve the problems of less anti-static filter material, unstable anti-static performance, long production process, etc., and achieve easy large-scale mass production, poor operability, and long production process. Effect

Inactive Publication Date: 2015-01-28
TIANNUO PHOTOELECTRIC MATERIAL
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing antistatic filter materials generally adopt the following three methods, ⑴ mixed acupuncture with chemical fibers and stainless steel fibers, ⑵ mixed acupuncture with chemical fibers and conductive fibers, and ⑶ adding antistatic agents to the filter materials. Among them, the method ⑴ has production Disadvantages such as long process, complex process, and poor uniformity; methods (2) and (3) have disadvantages such as unstable antistatic performance, fast attenuation, and large surface resistance
[0003] At present, there are few researches on anti-static filter materials at home and abroad. The invention patent (201310119167.5) provides an anti-static polytetrafluoroethylene filter bag and its preparation method. The method base fabric is made of polytetrafluoroethylene filaments and stainless steel fibers. Twisted strands are woven through warp and weft phases, and the upper and lower sides of the base fabric are covered with non-woven layers. The antistatic functional layer is different from that of the present invention.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] (1) Dry the aramid fiber filament at 80°C for 24 hours;

[0033] (2) Physically degrease the dried aramid fiber filament under the action of 40kHz ultrasonic field for 50min;

[0034] (3) Carrying out plasma pretreatment to the aramid fiber filaments of step (2) for 40 minutes;

[0035] (4) adopting the chemical plating method, the aramid fiber filament through step (3) is coated with a layer of metallic nickel, and the thickness of the single-layer coating is 0.1 μm;

[0036] (5) cutting off the aramid fiber filament through step (4), and the cutting length is 38mm;

[0037] ⑹ Blend the aramid fiber and glass fiber nonwoven surface layer raw materials in step ⑸ according to the mass ratio = 10:90, then open, card, form a web, add glass fiber nonwoven base cloth in the middle, acupuncture, and shape and other processes to prepare an antistatic filter material. After testing, the resistance of the surface layer of the antistatic filter material is 1×10 10 Ω.

Embodiment 2

[0039] (1) Dry the polyimide fiber filament at 120°C for 48 hours;

[0040] (2) Physically degrease the dried polyimide fiber filament under the action of 20kHz ultrasonic field for 60min;

[0041] (3) Carrying out corona pre-treatment to the polyimide fiber filament through step (2) for 60 minutes;

[0042] (4) adopting vacuum evaporation method, the polyimide fiber filament through step (3) is coated with a layer of metallic silver, and the thickness of the single-layer coating is 0.05 μm;

[0043] (5) cutting off the polyimide fiber filament through step (4), the cutting length is 65mm;

[0044] ⑹ Blend the polyimide fiber and polyimide fiber nonwoven fabric surface layer raw materials in step ⑸ by mass parts = 30:70, then open, card, form a web, and add polyimide fiber nonwoven fabric in the middle Anti-static filter materials are prepared through processes such as cloth base cloth, acupuncture, and shaping. After testing, the resistance of the surface layer of the anti...

Embodiment 3

[0046] (1) Dry the aramid fiber filament at 100°C for 36 hours;

[0047] (2) Physically degrease the dried aramid fiber filament under the action of 90kHz ultrasonic field for 30min;

[0048] (3) Perform ion source pretreatment on the aramid fiber filaments after step (2), and the treatment time is 20 minutes;

[0049] (4) adopting the physical vapor deposition method to coat the aramid fiber filament through step (3) with a layer of metal silver and nickel, and the thickness of the single-layer plating layer is 1 μm;

[0050] (5) cutting off the aramid fiber filament through step (4), and the cutting length is 51mm;

[0051] ⑹ Mix the aramid fiber, polytetrafluoroethylene fiber and polyphenylene sulfide fiber mixed non-woven fabric surface material in the step ⑸ according to mass parts = 20:60:20, and then open, card, form a net, add Basalt fiber non-woven fabric base fabric, acupuncture, shaping and other processes to prepare anti-static filter materials. After testing, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistanceaaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention provides an antistatic filtering material used at middle and high temperatures and a preparation method thereof. The antistatic filtering material comprises a non-woven base cloth and a surface layer. The non-woven base cloth and cut high temperature-resistant chemical fiber filaments are blended to form an antistatic functional layer and the surfaces of the high temperature-resistant chemical fiber filaments are plated with metal layers. The preparation method comprises the following steps of drying the high temperature-resistant chemical fiber filaments, carrying out physical oil removal, carrying out pre-treatment, carrying out metal layer plating coating, cutting the high temperature-resistant chemical fiber filaments with the metal layers, blending the high temperature-resistant chemical fiber filaments and a non-woven cloth surface raw material, and carrying out opening, scotching, netting, non-woven cloth base addition in the middle, needling and setting to obtain the antistatic filtering material. The antistatic filtering material has the advantages of low surface resistance, good uniformity, high temperature resistance and good bonding force, and can be used for middle and high temperature pocket-type dedusting in the fields of garbage burning, thermal power generation, cement, steel, chemical engineering and metallurgy.

Description

technical field [0001] The invention relates to the field of industrial textiles, in particular to an antistatic filter material for medium and high temperature and a preparation method thereof. Background technique [0002] In petrochemical, iron and steel smelting, coal-fired power plants, waste incineration, cement and other industrial fields, the smoke generated by some processes has the characteristics of flammable, explosive, high temperature, etc. During the use process due to dust and dust, dust and filter material The friction between them is likely to generate a large amount of static electricity. If the charge cannot be eliminated in time, a fire or explosion will occur. High-temperature smoke and dust put forward higher requirements for the use of filter materials. With the continuous development of science and technology and modern technology, people pay more and more attention to air quality and personal protection. Therefore, it is necessary to use high-tempe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B32B15/14B01D39/14
CPCB32B15/14B01D39/14B32B2250/03B32B2307/21B32B2307/306B32B2432/00
Inventor 李智慧郑杰朱焰焰徐刚马苹苹张茂功郭涵
Owner TIANNUO PHOTOELECTRIC MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap