Insert layer composite structure and manufacturing method thereof

Abstract

The invention discloses an insert layer composite structure and a manufacturing method thereof, relates to the technical field of large energy gap material ohmic contact formation, and solves the problems of poor ohmic contact resistivity measuring repeatability, low device stability, difficult ohmic contact formation on large energy gap semiconductor materials and high ohmic contact resistivity in the prior art. The insert layer composite structure is positioned between a SiC substrate and a metal cover layer and comprises a current transport layer and an ohmic contact metal layer, the current transport layer is made of special materials, the ohmic contact metal layer has a specific element component ratio, the current transport layer is positioned on the SiC substrate, and the ohmic contact metal layer is positioned above the current transport layer. The ohmic contact metal layer enters the current transport layer through diffusion of carbide and silicide and is mixed with the current transport layer to form the insert layer composite structure, wherein the carbide and the silicide are formed by an alloy annealing mode and have a specific chemical component ratio. The insert layer composite structure is applicable to simultaneously forming P-type and N-type ohmic contact on the large energy gap semiconductor materials or individually forming P-type or N-type ohmic contact.

Description

technical field [0001] The invention relates to the technical field of forming ohmic contacts with wide bandgap materials, in particular to an insertion layer composite structure and a manufacturing method thereof. Background technique [0002] Obtaining good ohmic contact quality of wide-bandgap silicon carbide (SiC) materials is a key factor for realizing high-temperature, high-voltage, high-frequency and high-power applications of SiC devices. Especially for SiC metal oxide field effect transistor (MOSFET) devices, it is required to form ohmic contacts in the n+ source region and p well region at the same time. In order to ensure the quality of the MOSFET gate oxide layer surface, the requirements for the ohmic contact metal system and alloy annealing conditions At the same time, due to the influence of factors such as high temperature activation annealing and alloy annealing, the quality of contact surface morphology and interface microstructure also have a great impact ...

AI Technical Summary

Problems solved by technology

However, if the metal is too thin, the current spreadability will be poor, which will make the repeatability of the ohmic contact resistivity measurement worse, the device stability will not be strong, and it is impossible to form a lower ohmic contact resistance on the wide bandgap semiconductor material at the same time Rate

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