N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus

A technology for solar cells and diffusion devices, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of different layer thicknesses, low battery efficiency, and many impurities, and achieve scientific preparation methods, improved uniformity, and economical and simple devices. Effect

Active Publication Date: 2015-03-04
锦州阳光能源有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to prepare n-type silicon solar cells with many impurities and p + In order to solve the problem of low cell efficiency due to different layer thicknesses, a method for preparing n-type silicon solar cells is proposed. The n-type silicon solar cells prepared by this method have high purity and P + The thickness of the layer is uniform, so that the battery efficiency is high, and the method is simple and easy to implement, and is convenient for industrial production

Method used

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  • N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus
  • N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus
  • N-type silicon solar cell, preparation method thereof, and aluminum evaporation diffusion apparatus

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Embodiment 1

[0053] figure 1 It is the flow chart of the preparation method of the n-type silicon front junction solar cell of embodiment 1; Figure 6 It is a schematic structural diagram of an aluminum evaporation and diffusion device used to prepare an n-type silicon solar cell in the present invention; image 3 Schematic diagram of the structure of the n-type silicon front-junction solar cell prepared in Example 1; Figure 7 It is a schematic diagram of the array carrier structure of the silicon wafer and the mask plate.

[0054] This embodiment relates to a method for preparing an n-type silicon front-junction solar cell. In this method, an aluminum film is deposited on a silicon wafer by thermal evaporation, and the silicon wafer is heated to realize aluminum diffusion to form a pn junction, and an n-type silicon front-junction solar cell is obtained. Battery.

[0055] In order to deposit an aluminum film on a silicon wafer by thermal evaporation, this embodiment uses an aluminum e...

Embodiment 2

[0075] figure 2 It is the flow chart of the preparation method of the n-type silicon back-junction solar cell of embodiment 2; Figure 4 Schematic diagram of the structure of the n-type silicon back-junction solar cell prepared in Example 2; Figure 8 is a schematic diagram of the structure of diffusion mask plate 1;

[0076] In this embodiment, the same aluminum evaporation and diffusion device used for preparing n-type silicon solar cells as in Embodiment 1 is used.

[0077] The preparation method of n-type silicon back-junction solar cell in this embodiment is as follows figure 2 shown, including the following steps:

[0078] (1) cleaning, and the step of polishing n-type silicon chip is identical with embodiment 1;

[0079] (2) Etching texture on the front surface of the silicon by chemical method. The texture structure is pyramid-shaped, with a tower height of 2-3 microns;

[0080] (3) Diffusion of phosphorus in the front field on the surface after texturing to fo...

Embodiment 3

[0087] Figure 5 Schematic diagram of the structure of the n-type silicon back-junction solar cell prepared in Example 3; Figure 9 It is a schematic diagram of the structure of diffusion mask plate 2.

[0088] In this embodiment, the same aluminum evaporation and diffusion device used for preparing n-type silicon solar cells as in Embodiment 1 is used.

[0089] The preparation method of the interdigitated n-type monocrystalline silicon solar cell with n-type back junction and back contact in this embodiment is as follows:

[0090] (1) cleaning, and the method of polishing n-type silicon chip is identical with embodiment 1;

[0091] (2) Utilize the chemical method to etch the texture on the front surface of the silicon, the texture structure is pyramid-shaped, and the height of the tower is 2-3 microns;

[0092] (3) Diffusion of phosphorus in the front field on the front surface after texturing to form n + Area;

[0093] (4) Utilize PECVD or ALD to deposit SiNx anti-refle...

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Abstract

The invention provides an n-type silicon solar cell, a preparation method thereof, and an aluminum evaporation diffusion apparatus. The preparation method of the n n-type silicon solar cell comprises the following steps: depositing an aluminum film on a silicon chip through a heat evaporation method, or by means of a diffusion mask, performing selective deposition on the surface of the silicon chip, then heating the silicon chip to realize aluminum diffusion to form a pn junction, and preparing the n-type silicon solar cell. The invention also discloses an aluminum evaporation diffusion apparatus for preparing the n-type silicon solar cell. The apparatus is simple, reasonable and compact in structure. The apparatus is provided with diffusion containers and a silicon chip array bearing frame. By use of the apparatus, the aluminum film can be deposited on one or more silicon chips at a time. According to the invention, by use of a diffusion technology of an aluminum heat evaporation pool, aluminum can be diffused at a quite low temperature, damage caused by high-temperature boron diffusion in a conventional n-type silicon solar cell process to the silicon chip and impurity pollution brought by use of an aluminum slurry screen printing method can be avoided. Therefore, the n-type solar cell, the method and the apparatus are suitable for batch production in a solar cell industry.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to an n-type silicon solar cell, its preparation method and an aluminum evaporation and diffusion device. Background technique [0002] In recent years, n-type silicon solar cells have become more and more popular due to their superior electrical properties, long minority carrier lifetime, easy passivation, high tolerance to impurities, and high conversion efficiency. The pn junction of traditional n-type silicon cells is realized by the diffusion of boron, for example: the IBC structure silicon solar cells of SunPower of the United States, and the Panda silicon cells of Yingli in China. However, the diffusion of boron in silicon needs to be carried out at a high temperature above 900°C, which often leads to damage to the silicon wafer. Moreover, the harmful B-O recombination centers generated during the high-temperature sintering process will lead to a decrease in the mino...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/068H01L31/1804H01L31/1876Y02E10/547Y02P70/50
Inventor 魏一刘爱民谭鑫路春希李平
Owner 锦州阳光能源有限公司
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