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A kind of nitride led epitaxial structure using sic substrate and preparation method thereof

A technology of nitride epitaxial layer and epitaxial structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of expensive equipment, many process parameters, and poor process consistency, and achieve simplified stripping process, high crystal quality, and improved good quality. rate effect

Inactive Publication Date: 2017-03-15
江苏巨晶新材料科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the manufacturing process of thin-film chips is relatively difficult, especially the substrate lift-off process, which not only has many process parameters, but also has poor process consistency.
Taking the fabrication of thin-film structure LED chips on sapphire substrates as an example, laser lift-off is mostly used to separate the nitride LED epitaxial layer from the substrate, but laser lift-off has the disadvantages of poor operability, low yield, and expensive equipment. question
In addition, the laser lift-off method is not suitable for the production of SiC-based LED thin film chips, because the laser wavelength of laser lift-off will be strongly absorbed by SiC, but not by sapphire.
However, the method of grinding the substrate to realize the SiC-based LED thin film chip will bring a large cost consumption: on the one hand, it comes from the grinding cost of the hard SiC thick film; It is then completely consumed and cannot be used again

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  • A kind of nitride led epitaxial structure using sic substrate and preparation method thereof
  • A kind of nitride led epitaxial structure using sic substrate and preparation method thereof
  • A kind of nitride led epitaxial structure using sic substrate and preparation method thereof

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preparation example Construction

[0059] The preparation of the two-dimensional derivative film is directly grown on the SiC substrate by the method of high temperature annealing or chemical vapor deposition or physical vapor deposition; the preparation method of the nitride epitaxial layer includes organic metal chemical vapor deposition , at least one of radio frequency magnetron sputtering, molecular beam epitaxy, pulsed laser deposition or hydride vapor phase epitaxy; wherein,

[0060] Described graphene is to make by the method for high temperature annealing or the method for chemical vapor deposition:

[0061] The specific steps of the high-temperature annealing method are as follows: place the SiC substrate at a temperature of 1500-2000°C and a vacuum degree of ≤10 -3 In the environment of Pa, or the temperature is 1300~1800℃, the pressure is ≥10 2 In the environment of argon atmosphere of Pa, graphitization is realized through the sublimation of silicon atoms on the surface of the substrate to obtain ...

Embodiment 1

[0076] Such as image 3 As shown, a single-layer graphene 201 is fabricated on the surface of a 4H-SiC substrate 101 as a two-dimensional derivative film, and then a nitride blue LED epitaxial layer is grown thereon. Wherein, the structural parameters of the n-type electron injection layer 301 are as follows: a 2 μm thick n-type GaN layer, the doping element is Si, and the doping concentration is 1.0×10 19 ; The structural parameters of the active layer 302 are as follows: In 0.15 Ga 0.85 N / GaN multiple quantum well light-emitting layer, In 0.15 Ga 0.85 The single-layer thicknesses of N and GaN are 3nm and 10nm respectively, and the number of periods of the multiple quantum wells is 5; the structural parameters of the p-type hole injection layer 303 are as follows: it includes two sublayers, one is a p-type GaN layer with a thickness of 0.2 μm, The p-type doping element is Mg, and the doping concentration is 1.0×10 20 ; the other is a 10nm thick p-type heavily doped p ++...

Embodiment 2

[0080] Such as Figure 4 As shown, a multi-layer hexagonal boron nitride (h-BN) derivative film 202 is fabricated on the surface of a 6H-SiC substrate 102 as a two-dimensional derivative film, and then a nitride green LED epitaxial layer is grown thereon. Wherein, the structural parameters of the n-type electron injection layer 301 are as follows: a 2 μm thick n-type GaN layer, the doping element is Si, and the doping concentration is 1.0×10 19 ; The structural parameters of the active layer 302 are as follows: In 0.3 Ga 0.7 N / GaN multiple quantum well light-emitting layer, In 0.3 Ga 0.7 The single-layer thicknesses of N and GaN are 2nm and 10nm respectively, and the period number of the multiple quantum wells is 4; the structural parameters of the p-type hole injection layer 303 are as follows: it includes two sublayers, one is a p-type GaN layer with a thickness of 0.2 μm, The p-type doping element is Mg, and the doping concentration is 1.0×10 20 ; the other is a 10nm t...

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Abstract

The invention relates to a nitride LED epitaxial structure with a SiC substrate and a preparation method of the nitride LED epitaxial structure. The nitride LED epitaxial structure comprises the SiC substrate, a two-dimensional derived membrane and a nitride epitaxial layer, wherein the two-dimensional derived membrane is located between the SiC substrate and the nitride epitaxial layer, and attached on the surface of the SiC substrate, and the nitride epitaxial layer is attached on the two-dimensional derived membrane; the two-dimensional derived membrane is manufactured by use of one layer or more than two layers of a two-dimensional nanosheet material; the nanosheet material comprises any one or the combination of more than two of graphene, silylene, hexagonal boron nitride and boron tricarbide. According to the nitride LED epitaxial structure with the SiC substrate, one layer or more than two layers of two-dimensional derived membranes are fabricated between the nitride epitaxial layer and the SiC substrate to guarantee smooth growth of the nitride epitaxial layer and help the separation of the substrate and the epitaxial layer in the stripping process; as a result, the stripping process is greatly simplified, the yield is increased and the cost is reduced.

Description

technical field [0001] The invention relates to a nitride LED epitaxial structure using a SiC substrate and a preparation method thereof, belonging to the technical field of optoelectronic device manufacturing. Background technique [0002] Al nitride x In y Ga 1-x-y N (0≤x, y≤1; x+y≤1; wurtzite crystal structure) light-emitting diode LEDs made of semiconductor materials are gradually being used in electronic display screens, landscape lighting, miner's lamps, Widely used in street lamps, liquid crystal display backlight, general lighting, optical disk information storage, biomedicine and other fields. The above-mentioned compound semiconductors can cover the entire spectral energy range from infrared, visible to ultraviolet light, and the emission wavelength of LED devices can be accurately customized by controlling the cationic composition of the nitride alloy. From the perspective of the scope of application fields and market capacity, the application of nitride LEDs ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/02H01L33/00
CPCH01L33/007H01L33/0093H01L33/02H01L33/32
Inventor 马亮胡兵李金权裴晓将刘素娟
Owner 江苏巨晶新材料科技有限公司
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