Aluminum nitride ceramic powder preparation method

A technology for aluminum nitride ceramics and powder, which is applied in the field of preparation of ultra-high-purity aluminum nitride powder, can solve the problem that the ultra-high-purity requirements of aluminum nitride powder cannot be met and the ultra-high-purity aluminum nitride powder cannot be obtained. and other problems, to achieve the effect of low cost, simple operation process and wide range of sources.

Active Publication Date: 2015-03-11
AVIC BASIC TECH RES INST
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

None of the above methods can obtain ultra-high purity aluminum nitride powder with a purity as high as 99.99%, which cannot meet the ultra-high purity requirements for aluminum nitride powder in the fields of laser weapons and microelectronics technology.

Method used

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preparation example Construction

[0027] The present invention will be described in further detail below. A preparation method of aluminum nitride ceramic powder, the operation steps of the method are as follows:

[0028] 1. A method for preparing aluminum nitride ceramic powder.

[0029] The operation steps of this method are as follows:

[0030] (1) Hydrolysis of metal aluminum

[0031] Put metal aluminum with a purity of 99.99% in a beaker, add pure water, the mass ratio of aluminum to pure water is 1:2-1:5, heat the water to 80°C-150°C, and perform rapid stirring at the same time to make the metal Aluminum and water undergo a hydrolysis reaction, and the stirring time is 1-5 hours, until the reaction is complete, and the aluminum hydrolysis slurry is obtained;

[0032] (2) Preparation of mixed slurry

[0033] Add sucrose with a purity of up to 99.99% to the above hydrolyzed slurry according to the proportion, the molar ratio of metal aluminum to sucrose is 1:0.1-1:5, and stir evenly after the sucrose i...

Embodiment 1

[0043]Weigh 200g of high-purity metal aluminum flakes with a purity of 99.99%, and the size of the aluminum flakes is 10mm×10mm×1mm, put them in a beaker, add 500g of pure water, heat the water to 90°C, and carry out rapid stirring treatment at the same time, so that the metal aluminum and The water undergoes a hydrolysis reaction, and after stirring for 3 hours, the reaction is complete, and the aluminum hydrolysis slurry is obtained. Then add 350g of high-purity sucrose and continue to stir for 20 minutes. After the sucrose is completely dissolved and mixed evenly, add 50g of acrylamide, 2.5g of methylenebisacrylamide, and 0.25g of ammonium persulfate. After stirring evenly, heat it in an oven to 70°C After the slurry is gelled, the wet gel is cut into small pieces and placed in an oven heated to 100° C. for drying for 12 hours. The dried gel blocks were wet-milled in a planetary mill and dried in an atmosphere furnace. 2 Calcination is carried out at 1500° C. under atmosph...

Embodiment 2

[0045] Weigh 500g of high-purity granular aluminum ingot with a purity of 99.99%, add 1500g of pure water, heat the water to 80°C, and carry out rapid stirring treatment at the same time, so that the metal aluminum and water undergo hydrolysis reaction, stir for 5 hours, the reaction is complete, and aluminum is obtained of hydrolyzed slurry. Then add 700g of high-purity sucrose and continue to stir for 20 minutes. After the sucrose is completely dissolved and mixed evenly, add 120g of methacrylamide, 5g of polyethylene glycol dimethacrylic acid, and 0.6g of ammonium persulfate. to 80°C, after the slurry is gelled, cut the wet gel into small pieces and put it in an oven to raise the temperature to 100°C for drying for 12 hours. The dried gel blocks were wet-milled in a planetary mill and dried in an atmosphere furnace. 2 Calcination was carried out at 1550° C. under atmosphere, and the temperature was kept for 5 hours. The powder after carbothermal reduction nitriding reacti...

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Abstract

The invention relates to the technical field of ceramic powder preparation, and relates to a high-purity aluminum nitride ceramic powder preparation method. The method comprises the following steps: metal aluminum is hydrolysed; an Al source and C source mixed slurry is obtained; the slurry is gelled; the gel is dried and crushed; the gel powder is subjected to a carbothermal reduction nitriding treatment; and decarbonization treatment is carried out. According to the invention, with the hydrolysis reaction of high-purity aluminum, an aluminum oxide precursor is obtained; high-purity cane sugar is adopted as the C source; a gel solid-phase method is combined with the carbothermal reduction nitriding process; Through the controlling over Al source and C source purities and through the non-air oxidative atmosphere decarbonization process treatment, ultrahigh-purity and high-sintering-activity aluminum nitride powder with a purity up to 99.99% can be obtained. With the method provided by the invention, aluminum nitride powder with ultrahigh purity and high sintering activity can be obtained, such that requirements on ultrahigh-purity aluminum nitride powder in the fields of laser weapons and microelectronic technology can be satisfied.

Description

technical field [0001] The invention belongs to the technical field of ceramic powder preparation technology, and relates to a preparation method of ultra-high-purity aluminum nitride powder. Background technique [0002] Aluminum nitride (AlN) is the third-generation semiconductor material developed after the first-generation Ge, Si semiconductor, second-generation GaAs, InP, and GaP compound semiconductors. It is a group III nitride with a hexagonal wurtzite structure, due to its large band gap (6.2eV), high breakdown electric field (14MV / cm), high electron migration speed (300cm2 / Vs), and high thermal conductivity (260W / m·K) and other excellent properties, as well as good chemical, thermal stability and radiation resistance, are ideal basic materials for making high-frequency, high-temperature, high-voltage, and high-power electronic devices. Especially compared with the existing GaAs or InP-based devices, the AlN-based THz emission source can provide higher power and hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/581C04B35/626
Inventor 梁艳媛王岭焦健焦春荣李光亚
Owner AVIC BASIC TECH RES INST
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