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Surfactant mixture for polysilicon suede making, suede making solution containing the same and suede making method

A surfactant and compound technology, which is applied in the field of surfactant compound to prepare polysilicon textured surface with low reflectivity, can solve the problem of affecting the photoelectric conversion efficiency of solar cells, unfavorable passivation film on the surface of polysilicon, and affecting the strength of silicon wafers and other problems, to achieve the effect of simple texture method, improved photoelectric conversion efficiency and low cost

Inactive Publication Date: 2015-03-11
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in the HF-rich system, it is very easy to form dark lines
The dark lines will become the recombination centers on the surface of the battery, thereby reducing the number of effective carriers; if the etching is deep enough when the dark lines are formed, it will be detrimental to the subsequent passivation film on the polysilicon surface; and the dark lines will greatly affect The strength of the silicon wafer is easy to break in the subsequent cell manufacturing process, thus affecting the photoelectric conversion efficiency of the solar cell

Method used

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  • Surfactant mixture for polysilicon suede making, suede making solution containing the same and suede making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] 1. The composition of surfactant compound is following three kinds of compounds and its ratio is:

[0043] C 14 h 29 CON(CH 2 CH 2 Oh) 2 :C 12 h 25 N(CH 2 CH 2 O) 15 H: C 14 h 29 O(CH 2 CH 2 O) 45 H=1:4:2.

[0044] 2. Composition of polysilicon texturing solution

[0045] The hydrofluoric acid with a concentration of 40%, the nitric acid with a concentration of 65%, and a surfactant compound were prepared in a polytetrafluoroethylene beaker according to a volume ratio of 30:70:1 to prepare a corrosion solution.

[0046] 3. Polysilicon Texturing

[0047] (1) Cleaning: After the polysilicon wafer was ultrasonically cleaned for 15 minutes, it was rinsed with deionized water for 60 seconds.

[0048] (2) Alkaline corrosion: immerse the polysilicon wafer cleaned in step (1) in 40°C, 5% NaOH solution and etch for 120s to remove the damaged layer on the surface of the silicon wafer, then rinse with deionized water for 60s to remove the surface of the polysilico...

Embodiment 2

[0053] 1. The composition of surfactant compound is the following three compounds and its ratio is: C 16 h 33 CON(CH 2 CH 2 Oh) 2 :C 8 f 17 O(CH 2 CH 2 O) 8 H: C 16 h 33 O(CH 2 CH 2 O) 30 H=1:2:6.

[0054] 2. Composition of polysilicon texturing solution

[0055] The hydrofluoric acid with a concentration of 40%, the nitric acid with a concentration of 65%, and a surfactant compound were prepared in a polytetrafluoroethylene beaker at a volume ratio of 20:80:0.5 to prepare an etching solution.

[0056] 3. Polysilicon Texturing

[0057] (1) Cleaning: After the polysilicon wafer was ultrasonically cleaned for 15 minutes, it was rinsed with deionized water for 60 seconds.

[0058] (2) Alkaline corrosion: immerse the polysilicon wafer cleaned in step (1) in 40°C, 5% NaOH solution and etch for 120s to remove the damaged layer on the surface of the silicon wafer, then rinse with deionized water for 60s to remove the surface of the polysilicon of lye.

[0059] (3) ...

Embodiment 3

[0063] 1. The composition of the surfactant compound is the following three compounds and the ratio is C 12 h 25 CON(CH 2 CH 2 Oh) 2 :C 16 h 33 N(CH 2 CH 2 O) 20 H: C 8 h 17 OC 6 h 4 (CH 2 CH 2 O) 30 H=1:4:5.

[0064] 2. Composition of polysilicon texturing solution

[0065] The hydrofluoric acid with a concentration of 40%, the nitric acid with a concentration of 65%, and a surfactant compound were prepared in a polytetrafluoroethylene beaker according to a volume ratio of 60:40:2 to prepare a corrosion solution.

[0066] 3. Polysilicon Texturing

[0067] (1) Cleaning: After the polysilicon wafer was ultrasonically cleaned for 15 minutes, it was rinsed with deionized water for 60 seconds.

[0068] (2) Alkaline corrosion: immerse the polysilicon wafer cleaned in step (1) in 40°C, 5% NaOH solution and etch for 120s to remove the damaged layer on the surface of the silicon wafer, then rinse with deionized water for 60s to remove the surface of the polysilicon ...

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Abstract

The invention relates to a surfactant mixture for polysilicon suede making. The surfactant mixture can be selected from any three or four of all the compounds with the following structural general formula: CnF2n+1O(CH2CH2O)mH, CkH2k+1CON(CH2CH2OH)2, CpH2p+1N(CH2CH2O)qH, CyH2y+1O(CH2CH2O)xH and CjH2j+1OC6H4(CH2CH2O)tH. The invention also discloses a polysilicon suede making solution containing the surfactant mixture and a suede making method thereof. The suede making solution provided by the invention can effectively eliminate dark lines produced in traditional suede making systems, and can reach the lowest reflectivity numerical value of theoretical research done by Y.Nishimoto and the like, thereby improving the photoelectric conversion efficiency of solar cells.

Description

technical field [0001] The invention relates to the technical field of preparing polysilicon for solar cells, in particular to a surfactant compound for polysilicon texturing, a texturing liquid containing the compound and a method for preparing a polysilicon textured surface with low reflectivity. Background technique [0002] With the increasing scarcity of non-renewable energy, the efficient use of renewable energy has been paid attention to. Since the advent of solar cells, their renewable, clean and cost-saving cost of transmission circuits have attracted widespread attention. From the initial monocrystalline silicon solar cells to today's polycrystalline silicon solar cells, how to improve their conversion efficiency has always been the tireless goal of scientists. [0003] To improve the conversion efficiency of solar cells, the first is to allow more light to enter the crystalline silicon. An effective method is to coat crystalline silicon with a multilayer film wh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06
Inventor 乔卫红熊展瑜侯军
Owner DALIAN UNIV OF TECH