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One-step method for flame soaking heat treatment modification of silicon electrode

A technology of heat treatment modification and silicon electrode, which is applied in the direction of battery electrodes, circuits, electrical components, etc., can solve the problems such as difficult to achieve the modification effect, and achieve the effect of simple electrode modification method, high charge and discharge efficiency, and excellent effect

Active Publication Date: 2015-03-11
JIANGXI ADVANCED NANOFIBER S&T CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the existing research, these methods complement each other, and it is difficult to achieve a good modification effect by only one method of modification

Method used

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  • One-step method for flame soaking heat treatment modification of silicon electrode
  • One-step method for flame soaking heat treatment modification of silicon electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Example 1: After immersing the silicon electrode in absolute ethanol as a solvent, ignite the solvent for heat treatment to modify

[0045] In this embodiment, high-purity crystalline silicon (Wt%=99.9%) with a diameter of 100nm, conductive agent (carbon black: acetylene black w / w=1:1) and polyacrylonitrile (PAN) were selected as materials for preparing electrodes.

[0046] Follow the steps below to prepare high-purity crystalline silicon electrodes:

[0047] (a) Dissolve 50 mg of PAN powder in 5000 μL of DMF solution and stir well to obtain a PAN matrix solution

[0048] (b) Weigh 400 mg of high-purity crystalline silicon and 50 mg of conductive agent, add them into the solution of (a) in batches, stir vigorously, and mix thoroughly to obtain a silicon electrode slurry.

[0049] (c) The silicon electrode slurry obtained in step (b) is directly coated on the copper foil with a coating machine (the coating thickness is 100 μm).

[0050] (d) Place the copper foil flat i...

Embodiment 2

[0054] Example 2: After immersing the silicon electrode with thiophene as a solvent, ignite the solvent for heat treatment to modify

[0055] In this embodiment, high-purity crystalline silicon (Wt%=99.9%) with a diameter of 100 nm, conductive agent (carbon black: acetylene black w / w=1:1) and phenolic resin are selected as materials for preparing electrodes.

[0056] Follow the steps below to prepare high-purity crystalline silicon electrodes:

[0057] (a) Dissolve 50 mg of phenolic resin in 5000 μL of DMF solution and stir well to obtain a phenolic resin matrix solution

[0058] (b) Weigh 400 mg of high-purity crystalline silicon and 50 mg of conductive agent, add them into the solution of (a) in batches, stir vigorously, and mix thoroughly to obtain a silicon electrode slurry.

[0059] (c) The silicon electrode slurry obtained in step (b) is directly coated on the copper foil with a coating machine (the coating thickness is 100 μm).

[0060] (d) Place the copper foil flat ...

Embodiment 3

[0064] Example 3: After immersing the silicon electrode in ethyl acetate as a solvent, ignite the solvent for heat treatment to modify

[0065] In this embodiment, high-purity crystalline silicon (Wt%=99.9%) with a diameter of 100 nm, conductive agent (carbon black: acetylene black w / w=1:1) and polystyrene are selected as materials for preparing electrodes.

[0066] Follow the steps below to prepare high-purity crystalline silicon electrodes:

[0067] (a) Dissolve 50 mg of polystyrene in 5000 μL of DMAc solution and stir well to obtain a polystyrene matrix solution

[0068] (b) Weigh 400 mg of high-purity crystalline silicon and 50 mg of conductive agent, add them into the solution of (a) in batches, stir vigorously, and mix thoroughly to obtain a silicon electrode slurry.

[0069] (c) The silicon electrode slurry obtained in step (b) is directly coated on the copper foil with a coating machine (the coating thickness is 100 μm).

[0070] (d) Place the copper foil flat in a b...

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Abstract

The invention provides a one-step method for the flame soaking heat treatment modification of a silicon electrode. The one-step method comprises the following steps: (a) preparing a polymer adhesive substrate solution; (b) preparing electrode slurry; (c) coating the electrode slurry; (d) curing and drying the silicon electrode; (e) laying the silicon electrode which is obtained by step (d) and covered with an active substance in a thermally-stable vessel where a combustible organic matter for soaking, then igniting the combustible organic matter, and obtaining the heat-treated modified silicon electrode after the combustible organic matter is burnt out. According to the technical scheme, the first charging and discharging efficiency of the modified silicon electrode is high, and the attenuation of a crystalline silicon material in the electrode can be remarkably retarded; compared with an unmodified silicon electrode, the modified silicon electrode has better effects; the one-step method is convenient, low in cost and easy for industrial production, and actual production requirements can be met.

Description

technical field [0001] The invention relates to the technical field of lithium ion batteries, in particular to a method for preparing and modifying a silicon negative electrode of a lithium ion battery. Background technique [0002] With the increase of population, the enhancement of environmental protection awareness, and the development of miniaturization of electronic products, people's pursuit of a new generation of batteries is to efficiently utilize resources, effectively increase capacitance, and reduce the use of toxic metals such as lead and cadmium. Due to many advantages such as small size, light weight, long life, large capacity, environmental protection, and wide operating temperature range, lithium-ion batteries have become a powerful candidate for a new generation of power supplies. [0003] In order to enable lithium-ion batteries to be used in a wider range of fields and meet the requirements of next-generation wireless communication equipment and hybrid ele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/134H01M4/1395
CPCH01M4/134H01M4/623Y02E60/10
Inventor 侯豪情王琦赵丹
Owner JIANGXI ADVANCED NANOFIBER S&T CO LTD
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