Organic solar cell based on tungsten disulfide nanosheet materials and manufacturing method thereof
A technology of organic solar cells and tungsten disulfide, applied in the manufacture/processing of organic semiconductor devices, organic semiconductor devices, circuits, etc., can solve problems such as damage, achieve good size uniformity, high hole mobility, and preparation methods simple effect
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[0032] The preparation method of the organic solar cell of the present invention comprises:
[0033] 1) Spin-coat the dispersion of tungsten disulfide nanosheet material on the indium tin oxide anode with glass as the substrate, and then treat with ultraviolet and ozone for 5-30 minutes after spin-coating to prepare a single-layer tungsten disulfide nano-film as the hole transport layer , with a thickness of 1 to 5 nanometers;
[0034] 2) On the hole transport layer of the tungsten disulfide nanofilm, spin-coat the organic photosensitive layer made from the donor and acceptor mixed solution of the conjugated polymer, with a thickness of 100 nanometers;
[0035] 3) Spin-coat poly[(9,9-bis(3'-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9, 9-hexadecyl fluorene)] (PFN) obtains electron transport layer, and thickness is 5 nanometers;
[0036] 4) Vacuum-evaporated aluminum as a cathode on the hole transport layer with a thickness of 100 nanometers, thereby preparing an organ...
Embodiment 1
[0045] The tungsten disulfide nanosheet material was prepared by chemical solution exfoliation method, with an average thickness of 1 nanometer and an average size of 200 nanometers. figure 2 Its atomic force microscope photo.
[0046] The tungsten disulfide nanosheet material is prepared by a chemical solution exfoliation method. The obtained tungsten disulfide nanosheet material is subjected to high-speed centrifugation and ultrasonic dispersion to obtain an aqueous solution of the tungsten disulfide nanosheet material with a concentration of 2 mg / ml.
[0047] The transparent conductive glass etched with strips of indium tin oxide (ITO, anode) on the surface was ultrasonically oscillated with detergent, aqueous solution, deionized water, acetone and isopropanol for 15 minutes, dried, and then treated with oxygen plasma Treat for 15 minutes; then spin-coat tungsten disulfide aqueous solution on the indium tin oxide (ITO) anode with glass as the substrate, spin-coat at a spee...
Embodiment 2
[0050] The tungsten disulfide nanosheet material was prepared by chemical solution exfoliation method, with an average thickness of 1 nanometer and an average size of 200 nanometers. figure 2 Its atomic force microscope photo.
[0051] The tungsten disulfide nanosheet material is prepared by a chemical solution exfoliation method. The obtained tungsten disulfide nanosheet material is subjected to high-speed centrifugation and ultrasonic dispersion to obtain an aqueous solution of the tungsten disulfide nanosheet material with a concentration of 2 mg / ml.
[0052] The transparent conductive glass etched with strips of indium tin oxide (ITO, anode) on the surface was ultrasonically oscillated with detergent, aqueous solution, deionized water, acetone and isopropanol for 15 minutes, dried, and then treated with oxygen plasma Treat for 15 minutes; then spin-coat tungsten disulfide aqueous solution on the indium tin oxide (ITO) anode with glass as the substrate, spin-coat at a spee...
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