A kind of f-p pressure sensor and forming method based on mems process

Abstract

The invention discloses an F-P pressure sensor based on an MEMS technology and a formation method thereof, and belongs to the field of high-precision optical fiber sensing measurement. The F-P pressure sensor mainly comprises an F-P pressure sensitive MEMS chip, a collimated and beam expanded optical fiber and a pedestal. The F-P pressure sensitive MEMS chip is composed of an SOI silicon chip and a glass sheet. The SOI silicon chip comprises top layer silicon, an intermediate oxide layer and bottom layer silicon. The SOI silicon chip is fixed on the glass sheet via silicon-glass anodic bonding. The glass sheet and the collimated and beam expanded optical fiber are soldered on the pedestal via soldering material. The F-P pressure sensitive MEMS chip is prepared on the basis of an MEMS micromachining technology, and the F-P pressure sensitive MEMS chip and the collimated and beam expanded optical fiber are aligned and packaged so that the optical fiber F-P pressure sensor is formed. The sensor has high sensitivity, high measurement precision and excellent over-range capability and can work in the high-temperature environment. Besides, the initial cavity length of the F-P cavity of the sensor is flexibly adjusted according to practical application requirements of pressure measurement sensitivity, measuring range and wavelength division networking.

Description

technical field [0001] The invention relates to a MEMS technology-based F-P pressure sensor and a forming method, belonging to the field of high-precision optical fiber sensing and measurement. Background technique [0002] Pressure sensor is the most commonly used sensor in industrial practice and instrumentation control. The traditional pressure sensor is mainly a mechanical structural device that indicates the pressure by the deformation of the elastic element. This kind of device is bulky and heavy, and cannot provide electrical output. With the development of semiconductor technology, semiconductor pressure sensors also emerge as the times require, especially with the development of MEMS technology, semiconductor sensors are developing towards miniaturization and low power consumption. [0003] MEMS pressure sensors that use electrical signal detection are mainly piezoresistive and capacitive. Piezoresistive pressure sensors refer to sensors made using the piezoresisti...

AI Technical Summary

Problems solved by technology

There are many defects in the existing all-fiber F-P pressure sensor, such as polishing the end face of the connected optical fiber, the quality of the polishing is poor, and it is difficult to make the microgroove, so that the roughness of the two end faces of the F-P cavity is relatively high. Poor, and it is difficult to deposit a high reflection film on the end face; two optical fibers are welded, and the parallelism of the two end faces of the F-P cavity is poor, which makes the existing F-P pressure sensor difficult to manufacture, the signal-to-noise ratio of the detection signal is poor, and the detection sensitivity is low inferior

Images