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Preparation method of nitrogen-doped porous carbon film and product thereof

A technology of nitrogen-doped porous carbon and nitrogen-doped carbon, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., to achieve the effect of reducing production costs

Inactive Publication Date: 2015-04-15
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, there is no report on the preparation of nitrogen-doped porous carbon films using this method as a precursor.

Method used

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  • Preparation method of nitrogen-doped porous carbon film and product thereof
  • Preparation method of nitrogen-doped porous carbon film and product thereof
  • Preparation method of nitrogen-doped porous carbon film and product thereof

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Experimental program
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Embodiment 1

[0024] DC magnetron sputtering is adopted, graphite is used as the sputtering target, nitrogen is used as the sputtering atmosphere, and platinum-coated silicon wafers (Pt / Ti / SiO 2 / Si) as the substrate, the substrate temperature is room temperature, the sputtering power is 70W, the thickness of the N-doped carbon film obtained by sputtering is 60nm, and the atomic percentage of N in the film is 20% as determined by X-ray photoelectron spectroscopy. Place the N-doped carbon film in a rapid annealing furnace with argon as a protective atmosphere, raise the temperature of the carbon film to 600°C, keep it at 600°C for 10 minutes, and then cool it to room temperature. The surface morphology of N-doped porous carbon film after heat treatment is shown in figure 1 - the atomic force microscope image of the N-doped porous carbon film obtained in this embodiment, by figure 1 It can be seen that the pores with a size of 10-200 nm are evenly distributed on the surface of the film, such...

Embodiment 2

[0026] DC magnetron sputtering is adopted, graphite is used as the sputtering target, nitrogen is used as the sputtering atmosphere, and silicon wafers (SiO 2 / Si) as the substrate, the substrate temperature is room temperature, the sputtering power is 70W, and the thickness of the N-doped carbon film obtained by sputtering is 60nm. Place the N-doped carbon film in a rapid annealing furnace with argon as a protective atmosphere, raise the temperature of the carbon film to 600°C, keep it at 600°C for 10 minutes, and then cool it to room temperature. The transmission electron micrographs of N-doped porous carbon films after heat treatment are shown in image 3 ,Depend on image 3 It can be seen that the pores with a size of 2-10 nm are uniformly distributed in the film. The thickness of the porous carbon film after heat treatment is 30 nm, and the size is 5 × 5 cm 2 .

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Abstract

The invention discloses a preparation method of a nitrogen-doped porous carbon film and a product thereof. A magnetron sputtering method is adopted, a carbon-rich material is taken as the sputtering target material, nitrogen gas or a mixed gas of nitrogen gas and argon gas is taken as the sputtering atmosphere, a metal / inorganic semiconductor material or an inorganic insulation material is taken as the substrate to prepare a nitrogen-doped carbon film, the substrate temperature is 20 to 500 DEG C; and then the nitrogen-doped carbon film is subjected to a hot treatment for 10 seconds to 20 hours in vacuum / a nitrogen gas atmosphere / an inert atmosphere at a temperature of 300 to 1000 DEG C so as to obtain the nitrogen-doped porous carbon film material. The provided preparation method does not need a template, does not consume the organic solvent, and moreover is simple and practical. The prepared nitrogen-doped porous carbon film material has the characteristics of adjustable nitrogen content and pore size, and the nitrogen content can reach 30% at most. The thickness of the prepared nitrogen-doped porous carbon film can be as thin as several nanometers, and the nitrogen-doped porous carbon film can be produced in a large scale.

Description

technical field [0001] The invention relates to the field of preparation of inorganic nanometer materials, in particular to a preparation method of nitrogen-doped porous carbon film. Background technique [0002] Porous carbon materials refer to carbon materials with different pore structures. The pore size can be adjusted according to the requirements of practical applications, so that the size is between nano-scale micropores and micron-scale macropores. Porous carbon materials have the properties of carbon materials, such as high chemical stability and low price; at the same time, the introduction of pore structure makes them have the characteristics of large specific surface area, controllable pore structure, and adjustable pore size. Porous carbon materials have been widely used in the fields of gas separation, water purification, chromatography, catalysis, photocatalysis, and energy storage. However, the poor hydrophilicity of pure carbon materials limits its applicat...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06
Inventor 诸葛飞曹鸿涛陈浩
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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