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A kind of low-resistivity copper indium gallium selenide quaternary alloy sputtering target material and preparation method thereof

A quaternary alloy, sputtering target technology, applied in the field of powder metallurgy, can solve the problem of not considering the conductive properties of the target, and achieve the effects of fine and uniform microstructure, low resistivity, and improved film thickness uniformity

Inactive Publication Date: 2017-09-15
KUNMING INST OF PRECIOUS METALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

None of the above-mentioned prior art considers the electrical conductivity of the target

Method used

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  • A kind of low-resistivity copper indium gallium selenide quaternary alloy sputtering target material and preparation method thereof

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preparation example Construction

[0025] The present invention prepares the above-mentioned copper indium gallium selenide alloy target with low resistivity through the following preparation method. The preparation method includes: powder preparation, powder mixing, powder metallurgy sintering and other processes, and the powder preparation includes CuIn0.7 Ga 0.3 Se 2 Preparation of single-phase alloy powders, the CuIn 0.7 Ga 0.3 Se 2 Single-phase alloy powder is prepared by vacuum reaction synthesis method, vacuum degree ≥ 10 -1 Pa, the reaction temperature is 500-700°C, and the heating rate is not greater than 5°C / min.

[0026] The powder preparation also includes In 2 Se 3 , Ga 2 Se 3 and Cu 2 Se single-phase alloy powder and In 0.7 Ga 0.3 Se 2 Preparation of ternary alloy powder, the In 2 Se 3 , Ga 2 Se 3 and Cu 2 Se single-phase phase alloy powder is prepared by vacuum reaction synthesis method, vacuum degree ≥ 10 -1 Pa, the reaction temperature is 400-600°C, the heating rate is not more...

Embodiment 1

[0031] Embodiment 1: The copper indium gallium selenide quaternary alloy target material of the present invention is prepared according to the following steps:

[0032] (1) Raw material powder preparation: select 5N and above high-purity raw material powder to prepare CuIn according to the stoichiometric ratio 0.7 Ga 0.3 Se 2 500 grams of quaternary mixed powder, the mixed powder is sealed in a quartz vessel and vacuumized to 10 -1 Pa, and then place the sealed quartz vessel in a muffle furnace and heat it to 650°C for 3 to 5 hours at a heating rate of 1°C / min, and the cooling method is furnace cooling. The obtained single-phase CuIn 0.7 Ga 0.3 Se 2 The quaternary alloy powder is mechanically crushed to prepare alloy powder below 300 mesh; the preparation of the raw material powder also includes In 2 Se 3 , Ga 2 Se 3 and Cu 2 Preparation of three binary single-phase alloy powders of Se, specifically In 2 Se 3 The sintering temperature of the alloy powder is 400-500...

Embodiment 2

[0034] Embodiment 2: difference with embodiment 1 is:

[0035] (1) The preparation of the raw material powder also includes In 2 Se 3 , Ga 2 Se 3 and Cu 2 Preparation of three binary single-phase alloy powders of Se, specifically In 2 Se 3 The sintering temperature of the alloy powder is 400-500°C, the heating rate is 1°C / min, and the heat preservation is 3-5 hours; Ga 2 Se 3 The sintering temperature of the alloy powder is 500-700°C, the heating rate is 1°C / min, and the heat preservation is 3-5 hours; Cu 2 The sintering temperature of Se alloy powder is 500-600°C, the heating rate is 1°C / min, and the heat preservation is 3-5 hours;

[0036] (2) Mixing of raw material powder: CuIn 0.7 Ga 0.3 Se 2 Quaternary alloy powders and the above three binary single-phase alloy powders according to CuIn 0.7 Ga 0.3 Se 2 The stoichiometric ratio is mixed, and the weight ratio of the quaternary alloy powder to the sum of the above three binary alloy powders is 4:1.

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Abstract

The invention discloses a low-resistivity copper indium gallium diselenide four-element alloy sputtering target material and a preparation method thereof. The target material comprises phases such as Cu(In0.7Ga0.3)Se2, CuInSe2 and Cu2Se, wherein the phase Cu(In0.7Ga0.3)Se2 in the phases of the material accounts for 95 percent or over of the total sum of the phases; and the sum of the phases CuInSe2 and Cu2Se accounts for 1-5 percent of the total phases. The method for preparing the sputtering target material disclosed by the invention comprises the following steps: preparing powder, mixing the powder, performing powder metallurgy sintering and the like, wherein the powder preparation comprises preparation of Cu(In0.7Ga0.3)Se2 single-phase alloy powder; the Cu(In0.7Ga0.3)Se2 single-phase alloy powder is prepared by virtue of a vacuum reaction synthesis method; the vacuum degree is more than or equal to 10<-1>Pa; the reaction temperature is between 500 and 700 DEG C; and the heating rate is not more than 5 DEG C per minute. The sputtering target disclosed by the invention is low in resistivity, high in density and fine and uniform in grain size and can perform intermediate frequency or direct current sputtering, the sputtering speed of a copper indium gallium diselenide film can be greatly improved, and the equipment investment cost can be saved.

Description

technical field [0001] The invention belongs to the technical field of powder metallurgy, and in particular relates to a low-resistivity copper indium gallium selenium quaternary alloy sputtering target and a preparation method thereof. Background technique [0002] Copper indium gallium selenide (CIGS for short) thin film ranks first among all kinds of thin film solar cells with the highest conversion rate of 20.3%, which is only 0.1% away from the highest conversion rate record of polysilicon, and has the characteristics of high conversion rate that does not decay with time. It is considered to be the most promising thin-film solar cell. Sputtering technology is currently the mainstream manufacturing process for the solar absorbing layer of CIGS cells. The large-scale application of the sputtering-selenization process in foreign countries on flat panel displays has been very mature, but the serious problem is the need to use H 2 Se is selenized by high temperature heating...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34B22F3/14
CPCB22F3/14C23C14/3407C23C14/3414
Inventor 谭志龙王传军张俊敏管伟明闻明沈月
Owner KUNMING INST OF PRECIOUS METALS
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