Method for preparing nano-porous silicon from Cu nano-particles by two-step auxiliary etching
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KUNMING UNIV OF SCI & TECH
- Publication Date
- 2015-04-29
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a method for preparing nanoporous silicon by two-step assisted etching of Cu nanoparticles, belonging to the technical field of nanomaterial preparation. Background technique
[0002] In recent decades, with the continuous development of society, the potential application prospects of nanomaterials in many fields have aroused widespread research interest due to their unique physical and chemical properties such as nanoeffects and huge specific surface areas. With the advancement of science and technology, silicon nanomaterials, as a new type of semiconductor material, exhibit novel physical properties such as quantum confinement effects and surface effects with the continuous reduction in diameter, which also makes them useful in light, electricity, Thermal, magnetic and catalytic reactions show significantly different physical properties from other materials, so they show very important application potential in the fields of p...