Method for preparing nano-porous silicon from Cu nano-particles by two-step auxiliary etching

A nanoporous, assisted etching technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as nanoporous silicon that is not specified, and achieve the effects of easy industrial production, easy operation, and low production cost.

Inactive Publication Date: 2015-04-29
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the method for preparing mesoporous silicon nanowires does not specify how to prepare nanoporous silicon

Method used

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  • Method for preparing nano-porous silicon from Cu nano-particles by two-step auxiliary etching
  • Method for preparing nano-porous silicon from Cu nano-particles by two-step auxiliary etching

Examples

Experimental program
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Effect test

Embodiment 1

[0023] The method for preparing nanoporous silicon by two-step assisted etching of Cu nanoparticles, the specific steps are as follows:

[0024] Step 1. Silicon wafer pretreatment: ultrasonically clean the single crystal silicon wafer with a resistivity of 0.01Ω / cm, p-type, and a crystal orientation of (100) with acetone, toluene, ethanol, and deionized water for 20 minutes respectively;

[0025] Step 2, oxidation treatment on the surface of the silicon wafer: the silicon wafer pretreated in step 1 is immersed in an ultrasonic cleaning 2 SO 4 (15wt.%) and H 2 o 2 (10wt.%) soaked in a solution with a volume ratio of 3:1 for 10 minutes, an oxide layer can be formed on the surface of the silicon wafer;

[0026] Step 3, the preparation of deposition solution: make 10ml concentration be 0.1wt.%Cu(NO 3 ) 2 , 20ml of hydrofluoric acid with a concentration of 40wt.% and deionized water were prepared at a volume ratio of 10:20:70 to obtain 100ml of deposition solution;

[0027] S...

Embodiment 2

[0030] The method for preparing nanoporous silicon by two-step assisted etching of Cu nanoparticles, the specific steps are as follows:

[0031] Step 1. Silicon wafer pretreatment: ultrasonically clean the monocrystalline silicon wafer with a resistivity of 240Ω / cm, p-type, and crystal orientation (100) with acetone, toluene, ethanol, and deionized water for 20 minutes respectively;

[0032] Step 2, oxidation treatment on the surface of the silicon wafer: the silicon wafer pretreated in step 1 is immersed in an ultrasonic cleaning 2 SO 4 (15wt.%) and H 2 o 2 (10wt.%) soaked in a solution with a volume ratio of 3:1 for 10 minutes, an oxide layer can be formed on the surface of the silicon wafer;

[0033] Step 3, the preparation of deposition solution: make 10ml concentration be 0.1wt.%Cu(NO 3 ) 2 , 20ml of hydrofluoric acid with a concentration of 40wt.% and deionized water were prepared at a volume ratio of 10:20:70 to obtain 100ml of deposition solution;

[0034]Step 4,...

Embodiment 3

[0037] The method for preparing nanoporous silicon by two-step assisted etching of Cu nanoparticles, the specific steps are as follows:

[0038] Step 1. Silicon wafer pretreatment: ultrasonically clean the single crystal silicon wafer with a resistivity of 0.01Ω / cm, p-type, and a crystal orientation of (100) with acetone, toluene, ethanol, and deionized water for 20 minutes respectively;

[0039] Step 2, oxidation treatment on the surface of the silicon wafer: the silicon wafer pretreated in step 1 is immersed in an ultrasonic cleaning 2 SO 4 (15wt.%) and H 2 o 2 (10wt.%) soaked in a solution with a volume ratio of 3:1 for 10 minutes, an oxide layer can be formed on the surface of the silicon wafer;

[0040] Step 3, the preparation of deposition solution: make 10ml concentration be 0.1wt.%Cu(NO 3 ) 2 , 20ml of hydrofluoric acid with a concentration of 40wt.% and deionized water were prepared at a volume ratio of 10:20:70 to obtain 100ml of deposition solution;

[0041] S...

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Abstract

The invention relates to a method for preparing nano-porous silicon from Cu nano-particles by two-step auxiliary etching and belongs to the technical field of preparation of nano-materials. The method comprises the following steps: firstly, pre-treating a silicon chip; performing surface oxidation treatment on the pre-treated silicon chip by using a physical or chemical method to form an oxidation layer; preparing a deposition solution and an etching solution; placing the silicon chip with the oxidation layer in the deposition solution for chemical deposition, taking out the silicon chip, placing the silicon chip in the etching solution, completely etching the silicon chip, then soaking the silicon chip into nitric acid, washing the silicon chip by using a great amount of deionized water, and then blow-drying the silicon chip by nitrogen to obtain the nano-porous silicon. The method offers a great help to the improvement of the surface area and the reaction activity of the nano-porous silicon, the surface reflectivity of the nano-porous silicon is greatly reduced, and the method has broad application prospect in the fields of nano-sensors and nano-catalysis.

Description

technical field [0001] The invention relates to a method for preparing nanoporous silicon by two-step assisted etching of Cu nanoparticles, belonging to the technical field of nanomaterial preparation. Background technique [0002] In recent decades, with the continuous development of society, the potential application prospects of nanomaterials in many fields have aroused widespread research interest due to their unique physical and chemical properties such as nanoeffects and huge specific surface areas. With the advancement of science and technology, silicon nanomaterials, as a new type of semiconductor material, exhibit novel physical properties such as quantum confinement effects and surface effects with the continuous reduction in diameter, which also makes them useful in light, electricity, Thermal, magnetic and catalytic reactions show significantly different physical properties from other materials, so they show very important application potential in the fields of p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306
CPCH01L21/30604
Inventor 周阳曹铭李绍元马文会谢克强伍继君魏奎先刘大春杨斌戴永年
Owner KUNMING UNIV OF SCI & TECH
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