Graphene/silicon photodetector with passivated interface and preparation method thereof

A graphene and silicon photoelectric technology, applied in the field of photoelectric detection, can solve problems such as complex manufacturing processes, achieve low cost, increase photoelectric voltage, and facilitate promotion

Inactive Publication Date: 2015-05-06
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the conventional silicon-based photodetector manufacturing process involves high-temperature diffusion and other processes, and the manufacturing process is relatively complicated.

Method used

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  • Graphene/silicon photodetector with passivated interface and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1) Clean the p-type doped silicon substrate with a resistivity of about 1Ω·cm without damage on the surface, and dry it;

[0020] 2) A 0.2nm aluminum oxide layer is grown on one side of the silicon substrate using atomic layer deposition technology;

[0021] 3) Transfer single-layer graphene onto the alumina layer;

[0022] 4) Fabricate InGa alloy electrodes on the back of the silicon substrate;

[0023] 5) Coating silver paste on graphene and drying to obtain interface passivated graphene / silicon photodetector.

Embodiment 2

[0025] 1) Clean the n-type doped silicon substrate with a resistivity of about 1Ω·cm without damage on the surface, and dry it;

[0026] 2) A 1nm aluminum oxide layer is grown on one side of the silicon substrate using atomic layer deposition technology;

[0027] 3) Transfer 10 layers of graphene onto the alumina layer;

[0028] 4) Deposit gold electrodes on the back of the silicon substrate by thermal evaporation;

[0029] 5) A chromium-nickel composite electrode was deposited on graphene by magnetron sputtering to obtain an interface passivated graphene / silicon photodetector.

Embodiment 3

[0031] 1) Clean the n-type doped silicon substrate with a resistivity of about 10Ω·cm without damage on the surface, and dry it;

[0032] 2) A 10nm aluminum oxide layer is grown on one side of the silicon substrate using atomic layer deposition technology;

[0033] 3) Transfer 5 layers of graphene onto the alumina layer;

[0034] 4) Deposit titanium-palladium-silver composite electrodes on the back of the silicon substrate by electron beam evaporation;

[0035] 5) Deposit gold electrodes on graphene by magnetron sputtering to obtain interface passivated graphene / silicon photodetectors.

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Abstract

The invention discloses a graphene / silicon photodetector with a passivated interface and a preparation method thereof. The graphene / silicon photodetector with the passivated interface is provided with a back electrode, a silicon wafer, an aluminum oxide layer, a graphene layer and a front electrode in sequence from the bottom to top. The preparation method includes that growing the aluminum oxide layer with 0.2 to 10 nanometers in thickness on one surface of the clean silicon wafer, transferring the graphene to the aluminum oxide layer, and respectively manufacturing the front electrode and back electrode on the other surfaces of the graphene and the silicon wafer. According to the graphene / silicon photodetector with the passivated interface, an aluminum oxide interface passivation layer is added between the silicon wafer and the graphene, and the special structure is capable of improving the photovoltage of the photodetector and the switch ratio thereof; the preparation method is simple in technique, low in cost and convenient to popularize.

Description

technical field [0001] The invention relates to a photodetector and a manufacturing method thereof, in particular to an interface-passivated graphene / silicon photodetector and a preparation method thereof, belonging to the field of photoelectric detection. Background technique [0002] Photoelectric detectors are widely used in various fields of military and national economy. They are mainly used in ray measurement and detection, industrial automatic control, photometric measurement, etc. in the visible or near-infrared band; in the infrared band, they are mainly used in missile guidance, infrared thermal imaging, Infrared remote sensing, etc. As the most important semiconductor material, silicon material is also the most important substrate material in the application of photodetectors. Silicon-based photodetectors have good responsivity in the visible and near-infrared bands. However, the conventional silicon-based photodetector manufacturing process involves high-tempera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/09H01L31/18
CPCH01L31/02161H01L31/09H01L31/1868Y02E10/50Y02P70/50
Inventor 林时胜徐文丽李晓强王朋吴志乾徐志娟章盛娇钟汇凯陈红胜
Owner ZHEJIANG UNIV
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