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Preparation method of highly preferentially oriented sodium bismuth titanate-barium titanate lead-free piezoelectric film

A bismuth sodium titanate and preferred orientation technology is applied in the field of preparation of highly preferentially oriented bismuth sodium titanate-barium titanate lead-free piezoelectric thin film, which can solve the problems of high cost, complex process and poor film orientation, and achieve The effect of large electric strain, high dielectric constant, and low dielectric loss

Inactive Publication Date: 2017-01-04
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention aims to solve the problems that most of the existing piezoelectric thin film materials contain relatively large amount of lead and the prepared thin films have poor orientation degree, high cost, complicated process and unfavorable for the application of large-area Si integrated circuits. Preparation method of bismuth sodium titanate-barium titanate lead-free piezoelectric thin film with highly preferential orientation

Method used

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  • Preparation method of highly preferentially oriented sodium bismuth titanate-barium titanate lead-free piezoelectric film
  • Preparation method of highly preferentially oriented sodium bismuth titanate-barium titanate lead-free piezoelectric film
  • Preparation method of highly preferentially oriented sodium bismuth titanate-barium titanate lead-free piezoelectric film

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Embodiment 1

[0031] Preparing highly preferentially oriented sodium bismuth titanate-barium titanate lead-free piezoelectric film, the steps are as follows:

[0032] (1) Preparation of BNT-BT precursor solution:

[0033] (a) According to the general chemical formula 0.94Bi 0.5 Na 0.5 TiO 3 -0.06BaTiO 3 Weigh the raw materials, dissolve sodium acetate and bismuth nitrate in acetic acid, stir and heat to boiling for 20 to 30 minutes to obtain a solution ①; use acetylacetone as a complexing agent to dissolve tetra-n-butyl titanate in ethylene diacetate The alcohol methyl ether was stirred at 50°C for 60 minutes to prepare the solution ②; the solution ② was added to the solution ①, and stirred at 70°C for 60 minutes to obtain the precursor solution A.

[0034] (b) According to the general chemical formula 0.94Bi 0.5 Na 0.5 TiO 3 -0.06BaTiO 3 Weigh raw materials, dissolve barium acetate in acetic acid, stir and heat to boiling for 20-30 minutes to obtain a solution③; use acetylacetone a...

Embodiment 2

[0056] The preparation method of highly preferred orientation sodium bismuth titanate-barium titanate lead-free piezoelectric film adopts the following steps:

[0057] (1) Configure sodium bismuth titanate-barium titanate precursor solution, specifically adopt the following method:

[0058] a. Dissolving sodium acetate and bismuth nitrate in acetic acid, using acetylacetone as a complexing agent to dissolve tetra-n-butyl titanate in ethylene glycol methyl ether, and then mixing the above solutions to obtain a precursor solution A;

[0059] b. dissolving barium acetate in acetic acid, using acetylacetone as a complexing agent to dissolve tetra-n-butyl titanate in ethylene glycol methyl ether, and then mixing the above solutions to obtain precursor solution B;

[0060] c. Mix precursor solution A and precursor solution B and stir at 70°C for 5 hours, control the molar ratio of sodium acetate, bismuth nitrate, and barium acetate to 45:45:1 to prepare sodium bismuth titanate-bariu...

Embodiment 3

[0066] The preparation method of highly preferred orientation sodium bismuth titanate-barium titanate lead-free piezoelectric film adopts the following steps:

[0067] (1) Configure sodium bismuth titanate-barium titanate precursor solution, specifically adopt the following method:

[0068] a. Dissolving sodium acetate and bismuth nitrate in acetic acid, using acetylacetone as a complexing agent to dissolve tetra-n-butyl titanate in ethylene glycol methyl ether, and then mixing the above solutions to obtain a precursor solution A;

[0069] b. dissolving barium acetate in acetic acid, using acetylacetone as a complexing agent to dissolve tetra-n-butyl titanate in ethylene glycol methyl ether, and then mixing the above solutions to obtain precursor solution B;

[0070] c. Mix precursor solution A and precursor solution B and stir at 70°C for 5 hours, control the molar ratio of sodium acetate, bismuth nitrate, and barium acetate to 47:47:3 to prepare sodium bismuth titanate-bariu...

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Abstract

The invention relates to a preparation method of a highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film. The preparation method comprises the following steps: (1) preparing a sodium bismuth titanate-barium titanate precursor solution; (2) sputtering lanthanum nickelate on a Pt / Ti / SiO2 / Si substrate and performing heat treatment at 700 DEG C for 30 minutes; (3) cleaning and drying the substrate with the lanthanum nickelate; (4) performing spin-coating on the substrate obtained in the step (3) by use of the sodium bismuth titanate-barium titanate precursor solution layer by layer until the thin film of the desired thickness is obtained; (5) performing annealing treatment on the thin film obtained in the step (4) at 700 DEG C for 120 minutes, thereby obtaining the highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film. The highly preferred oriented sodium bismuth titanate-barium titanate lead-free piezoelectric thin film prepared by use of the method is high in degree of orientation, has relatively high electrostrictive strain, a relatively high dielectric constant and relatively low dielectric loss under a low electric field, and has favorable application prospect in the fields of high-precision displacement controllers, micro-actuators and the like.

Description

technical field [0001] The invention belongs to the field of electronic materials, and in particular relates to a method for preparing a lead-free piezoelectric film with a highly preferential orientation bismuth sodium titanate-barium titanate lead-free piezoelectric film. Background technique [0002] Piezoelectric film is a material with piezoelectric properties and a thickness of tens of nanometers to submicrons. Compared with bulk materials, piezoelectric thin films not only have a series of important properties such as light, electricity, heat, and sound similar to bulk materials, but also have small volume and low working voltage, which is convenient for the development of small devices and integration with semiconductor processes. And other advantages, which makes it have broad application prospects in high-tech fields such as microelectronics, optoelectronics, integrated optics, micromechanics and microelectromechanical. With the development of piezoelectric film p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/475C04B35/622
Inventor 翟继卫李朋沈波李伟
Owner TONGJI UNIV