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Preparation method of P type transparent Ca3Co4O9 conductive film

A conductive thin film and transparent technology, which is applied in the field of preparation of P-type transparent Ca3Co4O9 conductive thin film, can solve the problems of preparation process stability and repeatability improvement, electrical conductivity and other problems, and achieve good crystal quality, high photoelectric quality factor, Good process stability

Active Publication Date: 2015-05-20
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although p-type TCO materials can be prepared through a certain process in systems such as ZnO, their conductivity is far from that of n-type TCO, and the stability and repeatability of the preparation process need to be greatly improved.

Method used

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  • Preparation method of P type transparent Ca3Co4O9 conductive film
  • Preparation method of P type transparent Ca3Co4O9 conductive film
  • Preparation method of P type transparent Ca3Co4O9 conductive film

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Embodiment Construction

[0021] The present invention will be described in detail below in conjunction with examples.

[0022] p-type transparent conductive film Ca 3 co 4 o 9 The preparation method is carried out according to the following steps:

[0023] A, the high-purity CaCO 3 ,Co 3 o 4 According to the molar ratio of calcium to cobalt 3:4, weighing, mixing, grinding,

[0024] Tablet molding, pre-sintering in a tube-type high-temperature annealing furnace at 900 ° C for 10 hours, and naturally cooling to

[0025] At room temperature, repeat the pre-sintering 2-3 times in this way to obtain the Ca used for deposition 3 co 4 o 9 target;

[0026] B, the prepared Ca 3 co 4 o 9 The target material is placed in the PLD cavity, deposited by pulsed laser, in LaAlO 3 The substrate deposits Ca according to the above parameters 3 co 4 o 9 film.

[0027] C. Annealing at high temperature for 2 hours in a high-purity oxygen atmosphere at an annealing temperature of 820°C to obtain Ca grown al...

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Abstract

The invention discloses a preparation method of a P type transparent Ca3Co4O9 conductive film, belonging to the technical field of functional film materials. The preparation method comprises the following steps of: A, preparing a ceramic target: sintering a Ca3Co4O9 ceramic target through a high-temperature solid-phase reaction method; B, depositing a film by using pulse laser: putting the obtained target in a PLD (Pulsed Laser Deposition) cavity, and growing a c-axis oriented Ca3Co4O9 pre-prepared film on a single-crystal substrate through a pulse laser depositing technology; and C, annealing at high temperature in a high-purity oxygen atmosphere: annealing by putting the pre-prepared film in a tubular high-temperature furnace at 780-820 DEG C for 1-2 h, wherein flow oxygen with the purity of 99.99% and the pressure of 0.8-1 atmosphere needs to be introduced into the tubular furnace while annealing. Because of having higher carrier concentration and wider forbidden bandwidth, the transparent Ca3Co4O9 conductive film prepared by the method shows good photoelectric properties, such as lower electrical resistivity and higher visible light transmittance; experimental results can be repetitive; and the process stability is good.

Description

technical field [0001] The invention belongs to the technical field of functional film materials, in particular to a P-type transparent Ca 3 co 4 o 9 Preparation method of conductive thin film. Background technique [0002] From flat-panel liquid crystal displays, thin-film transistor manufacturing, transparent electrodes of solar cells, and defrosting of glass for trains and planes to building curtain wall glass, transparent conductive oxide films are widely used. Current research mainly focuses on ZnO, In 2 o 3 , SnO 2 and its doping system SnO 2 : Sb, SnO 2 : F, In 2 o 3 :Sn(ITO), ZnO:A1(AZO), etc., but these materials are all n-type TCO materials. Although p-type TCO materials can be prepared through a certain process in systems such as ZnO, their conductivity is far from that of n-type TCO, and the stability and repeatability of the preparation process need to be greatly improved. Therefore, the preparation of p-type TCO thin film materials with superior perf...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/06C23C14/58
Inventor 孙丽卿王淑芳闫国英傅广生李晓苇
Owner HEBEI UNIVERSITY
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