Method for forming Schottky contact on surface of zinc oxide and regulating Schottky contact

A Schottky contact, zinc oxide technology, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as complex methods and no reliability, and achieve simple steps, short time, and controllable strong effect

Inactive Publication Date: 2015-05-20
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, most of the methods for preparing Schottky contacts on zinc oxide are complicated and not very reli...

Method used

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  • Method for forming Schottky contact on surface of zinc oxide and regulating Schottky contact
  • Method for forming Schottky contact on surface of zinc oxide and regulating Schottky contact
  • Method for forming Schottky contact on surface of zinc oxide and regulating Schottky contact

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Put the cleaned zinc oxide sample in the plasma processing chamber, close the chamber and extract the internal gas to 5×10 -3 Pa.

[0042] Introduce oxygen with a flow rate of 100sccm, adjust the internal pressure of the chamber to 3Pa, turn on the radio frequency power supply, ignite the oxygen inside the chamber, and adjust the radio frequency power to 400W, and process for 120s. After the treatment, turn off the radio frequency power supply and take out the sample.

[0043] The metal mask plate is covered on the zinc oxide sample, and 25nm nickel and 65nm gold are evaporated by electron beam to form electrodes. The Schottky contact characteristics of its electrodes are shown in figure 2 . Depend on figure 2 It can be seen that the electrode exhibits rectification characteristics, and the turn-on voltage is 6V.

Embodiment 2

[0045] Put the cleaned zinc oxide sample in the plasma processing chamber, close the chamber and extract the internal gas to 3×10 -3 Pa.

[0046] Introduce oxygen with a flow rate of 120sccm, adjust the internal pressure of the chamber to 2.8Pa, turn on the radio frequency power supply, start the oxygen inside the chamber, and adjust the radio frequency power to 200W, and process for 120s. After the treatment, turn off the radio frequency power supply and take out the sample .

[0047] The metal mask plate is covered on the zinc oxide sample, and 25nm nickel and 65nm gold are evaporated by electron beam to form electrodes. The Schottky contact characteristics of its electrodes are shown in image 3 . Depend on image 3 It can be seen that the electrode exhibits rectification characteristics, and the turn-on voltage is 5.5V.

Embodiment 3

[0049] Put the cleaned zinc oxide sample in the plasma processing chamber, close the chamber and extract the internal gas to 5×10 -3 Pa.

[0050] Introduce oxygen with a flow rate of 140sccm, and adjust the internal pressure of the cavity to 2.9Pa, turn on the radio frequency power supply, start the oxygen in the cavity, and adjust the radio frequency power to 100W, process for 120s, after the treatment, turn off the radio frequency power supply, and take out the sample .

[0051]The metal mask plate is covered on the zinc oxide sample, and 25nm nickel and 65nm gold are evaporated by electron beam to form electrodes. The Schottky contact characteristics of its electrodes are shown in Figure 4 . Depend on Figure 4 It can be seen that the electrode exhibits rectification characteristics, and the turn-on voltage is 5.1V.

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Abstract

The invention discloses a method for forming Schottky contact on the surface of zinc oxide and regulating the Schottky contact. The method mainly comprises the following steps: (1) putting a cleaned zinc oxide sample into a plasma treatment cavity, and vacuumizing the cavity until high vacuum degree is reached; (2) feeding oxygen to regulate the pressure intensity of the cavity to appointed pressure intensity; (3) switching on a radio frequency power supply to build up the oxygen in the cavity by certain power; (4) when enough treatment time is achieved, taking out the sample, and evaporating a nickel-gold electrode to obtain a Schottky contact electrode. The method is high in operability, stable and reliable, and a novel method for treating the surface of the zinc oxide is developed; the difficulty in preparing the Schottky contact on the zinc oxide is solved; furthermore, the contact performance can be regulated by regulating the treatment intensity. The method is novel, reliable, very short in time consumption, easy to operate and suitable for large-scale semiconductor industrial application.

Description

technical field [0001] The invention relates to a zinc oxide surface treatment method, which belongs to the field of semiconductor device preparation, in particular to a method for forming and regulating Schottky contacts on the surface of zinc oxide through oxygen plasma treatment. Background technique [0002] Since room-temperature ultraviolet laser emission from zinc oxide was reported (Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films, Applied Physic Letters, 1998, 72(25): 3270), zinc oxide has been widely concerned. Oxidation has a new band gap of 3.37eV and a high exciton binding energy of 60meV. Its superior performance has attracted increasing attention and is considered to be one of the semiconductors that is expected to replace GaN. [0003] Applications of zinc oxide include UV LEDs, solar cells, UV detectors, pressure sensors, etc. The application of zinc oxide devices involves the problem of semiconductor-metal con...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 汤子康关钊允黄丰吴雁艳陈安琪祝渊
Owner SUN YAT SEN UNIV
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