An integrated circuit and its manufacturing method and electronic device

Abstract

The invention provides an integrated circuit, a manufacturing method thereof, and an electronic device, and relates to the technical field of semiconductors. The integrated circuit provided by the present invention is provided with a cavity below the transistor in the first semiconductor substrate of the composite semiconductor substrate. Since the cavity can isolate the transistor from the composite semiconductor substrate, the source and drain of the transistor can be reduced. The parasitic coupling between the gate and the interconnection line and the compound semiconductor substrate reduces the parasitic capacitance caused by the coupling effect of the substrate, thereby improving the performance of the integrated circuit. The manufacturing method of the integrated circuit of the present invention is used to manufacture the above-mentioned integrated circuit, and the manufactured integrated circuit also has the above-mentioned advantages. The electronic device of the present invention uses the above-mentioned integrated circuit, so it also has the above-mentioned advantages.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an integrated circuit, a manufacturing method thereof, and an electronic device. Background technique [0002] In the field of semiconductor technology, a radio frequency front-end module (RF FEM for short) is a key component in wireless communication devices (such as mobile phones, tablet computers, etc.), and a radio frequency switch device (referred to as a radio frequency switch, usually Integrated circuit or part of integrated circuit) is one of the key components of the RF front-end module. The RF switch in the RF front-end module (RF FEM) needs to have high signal fidelity, low insertion loss, good linearity characteristics and small signal distortion. [0003] In the prior art, radio frequency switches are usually manufactured using gallium arsenide (GaAs) semiconductor transistors, and the manufacturing and packaging costs are relatively expensive. In recent yea...

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Problems solved by technology

[0004] However, in the radio frequency switching device manufactured by silicon-on-insulator metal oxide semiconductor field effect transistor (hereinafter referred to as transistor), there are still parasitic coupling effects between the source, drain and gate of the transistor and the interconnection line and the semiconductor substrate , still brings additional parasitic capacitance, and this parasitic capacitance will change with the voltage change of the switching signal, which will further affect the overall performance of the field effect transistor, and finally affect the performance of the RF switching device and even the entire RF front-end module

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