Dual-N-layer structure amorphous silicon solar cell and preparation method of dual-N-layer structure amorphous silicon solar cell
A technology of solar cells and layer structures, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as solar cell current and voltage loss, achieve high photoelectric conversion efficiency, improve conversion efficiency, and increase short-circuit current effects
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Embodiment 1
[0040] The double n-layer structure amorphous silicon solar cell provided in this embodiment comprises a glass substrate, a transparent conductive film 1, a P-type amorphous silicon layer 2, a buffer layer 3, and an intrinsic amorphous silicon layer i arranged on the glass substrate in sequence. Layer 4, a double-layer n-type amorphous silicon layer 5, a back reflection layer 6 and a back electrode 7. The double-layer n-type amorphous silicon layer is composed of a lightly doped n-type amorphous silicon layer and a heavily doped n-type amorphous silicon layer. A double n-layer structure composed of two silicon layers.
[0041] The transparent conductive film is SnO with textured structure 2 : F thin film; p-type amorphous silicon layer is p-a-SiC:H; buffer layer is a-SiC:H thin film; amorphous silicon intrinsic layer i layer is i-a-Si:H thin film; lightly doped n-type amorphous The silicon layer is a lightly doped n-a-Si:H film; the heavily doped n-type amorphous silicon laye...
Embodiment 2
[0058] The double n-layer structure amorphous silicon solar cell provided in this embodiment includes a glass substrate, a transparent conductive film, a p-type amorphous silicon layer, a buffer layer, an intrinsic layer i of amorphous silicon, a double A layer of n-type amorphous silicon layer, a back reflection layer and a back electrode. n layer structure.
[0059] The transparent conductive film is SnO with textured structure 2: F film; p-type amorphous silicon layer is p-a-SiC:H film; buffer layer is a-SiC:H film; amorphous silicon intrinsic layer i layer is i-a-Si:H film; lightly doped n-type non The crystalline silicon layer is a lightly doped n-a-Si:H film; the heavily doped n-type amorphous silicon layer is a heavily doped n-a-Si:H film; the back reflection layer is zinc oxide doped with aluminum ZnO:Al film; the back electrode is silver electrodes.
[0060] The film thickness of p-a-Si:H film is 10-30nm; the film thickness of a-SiC:H film is 10-20nm; the film thic...
Embodiment 3
[0068] The amorphous silicon solar cell with double n-layer structure provided in this embodiment is the same as that in Embodiment 1.
[0069] The difference of the preparation method of this double n-layer structure amorphous silicon solar cell is that with embodiment 1: change step 5) and step 6), change the deposition time of these two steps, namely
[0070] Step (5) The vacuum degree of the vacuum chamber is pumped to 3.0×10 -6 Torr, the substrate temperature is heated to 260°C, the flow rate of silane gas is 15sccm, the flow rate of phosphine gas is 30sccm, the flow rate of hydrogen gas is 105sccm, the gas is uniform for 8 minutes, the reaction pressure is 0.4Torr, and the discharge power is 80mW / cm 2 , the deposition time is 2 minutes and 25 seconds;
[0071] Step (6) Vacuum the vacuum chamber to 3.0×10 -6 Torr, the substrate temperature is heated to 260°C, the flow rate of silane gas is 10sccm, the flow rate of phosphine gas is 40sccm, the flow rate of hydrogen gas i...
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