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Organic light-emitting device and manufacturing method thereof

An electroluminescence device and electroluminescence technology, which are applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reduced luminous efficiency, difficulty in meeting the needs of use, and low probability of exciton recombination, etc. Achieve the effect of high luminous efficiency, improve electron transfer rate, and improve light output efficiency

Inactive Publication Date: 2015-06-24
OCEANS KING LIGHTING SCI&TECH CO LTD +2
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in traditional organic electroluminescent devices, the electron transport rate is two or three orders of magnitude lower than the hole transport rate, so it is very easy to cause a low probability of exciton recombination
Moreover, the region where the excitons are recombined is not in the light-emitting region, thereby reducing the luminous efficiency, so that the luminous efficiency of the current organic electroluminescent devices is still difficult to meet the use requirements

Method used

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  • Organic light-emitting device and manufacturing method thereof
  • Organic light-emitting device and manufacturing method thereof
  • Organic light-emitting device and manufacturing method thereof

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preparation example Construction

[0060] see figure 2 , a method for preparing an organic electroluminescent device according to an embodiment, comprising the following steps S110 to S170.

[0061] Step S110: providing a substrate, and preparing an anode on the substrate by magnetron sputtering.

[0062] The substrate is a transparent substrate, preferably glass.

[0063] After the substrate was rinsed with distilled water and ethanol in sequence, it was soaked overnight in isopropanol. Then take it out and dry it for later use.

[0064] The anode is prepared on a dry and clean substrate by magnetron sputtering process. The acceleration voltage of magnetron sputtering is 300V-800V, the magnetic field strength is 50G-200G, and the power density is 1W / cm 2 ~40W / cm 2 .

[0065] The anode is indium tin oxide film (ITO), aluminum-doped zinc oxide film (AZO) or indium-doped zinc oxide film (IZO), preferably indium tin oxide film (ITO).

[0066] The thickness of the anode is 50 nm to 300 nm, preferably 120 nm...

Embodiment 1

[0108] The preparation structure is Glass / ITO / MoO 3 / NPB / BCzVBi / TPBi / FeCl 3 :BCzVBi / PC61BM:Yb / TiO 2 / Ag organic electroluminescent devices

[0109] 1. Provide glass as the substrate, denoted as Glass. Rinse the glass with distilled water and ethanol, soak it in isopropanol overnight, then take it out and dry it for later use;

[0110] 2. The anode is prepared on a dry and clean substrate by magnetron sputtering. The acceleration voltage of magnetron sputtering is 700V, the magnetic field strength is 120G, and the power density is 20W / cm 2 , the material of the anode is indium tin oxide (ITO), the anode is expressed as ITO, and the thickness of the anode is 120 nanometers;

[0111] 3. Prepare a hole injection layer on the anode by vacuum evaporation. The working pressure is 8×10 -4 Pa, the evaporation rate is 0.2nm / s. The material of the hole injection layer is molybdenum trioxide (MoO 3 ), the hole injection layer is denoted as MoO 3 , the thickness of the hole injec...

Embodiment 2

[0121] The preparation structure is Glass / IZO / WO 3 / NPB / Alq 3 / TAZ / FeBr 3 :Alq 3 / C60:Mg / TiO 2 / Al organic electroluminescent devices

[0122] 1. Provide glass as the substrate, denoted as Glass. Rinse the glass with distilled water and ethanol, soak it in isopropanol overnight, then take it out and dry it for later use;

[0123] 2. The anode is prepared on a dry and clean substrate by magnetron sputtering. The acceleration voltage of magnetron sputtering is 300V, the magnetic field strength is 50G, and the power density is 40W / cm 2 , the material of the anode is indium-doped zinc oxide film (IZO), the anode is expressed as IZO, and the thickness of the anode is 300 nanometers;

[0124] 3. Prepare a hole injection layer on the anode by vacuum evaporation. The working pressure is 2×10 -3 Pa, the evaporation rate is 1nm / s. The material of the hole injection layer is tungsten trioxide (WO 3 ), the hole injection layer is denoted as WO 3 , the thickness of the hole inj...

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Abstract

The invention relates to an organic light-emitting device and a manufacturing method thereof. The organic light-emitting device comprises a substrate, an anode, a hole injection layer, a hole transfer layer, a light-emitting layer, an electron transfer layer, an electron injection layer and a cathode which are sequentially stacked. The electron injection layer comprises a ferric salt doping layer, a fullerene doping layer and a titanium dioxide doping layer which are stacked on the electron transfer layer in sequence. The ferric salt doping layer is made of an inorganic ferric salt and fluorescence radiation materials. The fullerene doping layer is made of a fullerene derivate and metal. Due to the fact that the carrier concentration of the inorganic ferric salt is high, the electron density and the electron-hole combination probability can be increased; due to the fluorescence radiation materials, light-emitting light color can be complemented, the light color purity is improved, and the light-emitting efficiency is improved; due to the fact that the fullerene derivate is electron-rich materials, the electron transfer rate can be increased; due to the fact that the titanium dioxide doping layer can enable light to be scattered, light emitted to the two sides can be returned to the middle, and the light-emitting efficiency is improved; accordingly, the light-emitting efficiency of the organic light-emitting device is high.

Description

technical field [0001] The invention relates to the technical field of electroluminescence, in particular to an organic electroluminescence device and a preparation method thereof. Background technique [0002] In 1987, C.W.Tang and Van Slyke of Eastman Kodak Company in the United States reported a breakthrough in the research of organic electroluminescence. A high-brightness, high-efficiency double-layer organic electroluminescent device (OLED) was fabricated using ultra-thin film technology. The OLED has a brightness of 1000cd / m at 10V 2 , its luminous efficiency is 1.51lm / W, and its lifespan is more than 100 hours. [0003] However, in traditional organic electroluminescent devices, the electron transport rate is two or three orders of magnitude lower than the hole transport rate, so the probability of exciton recombination is extremely low. Moreover, the region where the excitons are recombined is not in the light-emitting region, so that the luminous efficiency is re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 周明杰黄辉陈吉星王平
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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