Radio frequency integrated circuit chip and its forming method
A technology of radio frequency integrated circuits and chips, which is applied in the direction of circuits, electrical components, and electric solid devices, and can solve problems such as harmonic distortion and adverse effects of signal linearity characteristics, and achieve the effect of improving transmission quality
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[0032] Such as figure 1 As shown, the existing radio frequency integrated circuit chip includes a high resistance semiconductor substrate 100 (High Resistance handle wafer), in which a shallow trench isolation structure 101 (STI) is usually fabricated, and a dielectric layer is also formed on the semiconductor substrate 100 102 (usually an interlayer dielectric layer or an intermetallic dielectric layer), a device 103 (usually an active device or a passive device) is formed on the dielectric layer 102 , wherein the passive device is usually located above the shallow trench isolation structure 101 .
[0033] Since the shallow trench isolation structure 101 inevitably carries fixed charges such as trap charges, which is equivalent to the gate oxide layer with a voltage applied in the transistor, it will provide high-resistance semiconductors that are located below it and are single-crystal structures. The substrate 100 generates an electric field, causing the high-resistance sem...
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