Undoped transparent conductive oxide films with perovskite structure
A technology of perovskite structure and oxide film, which is applied in ion implantation plating, metal material coating process, coating, etc., can solve problems that have not been reported, reduce interface defects, improve growth quality, and reduce The effect of resistivity
Inactive Publication Date: 2017-07-11
HUAIBEI NORMAL UNIVERSITY
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Problems solved by technology
However, so far, for BaSnO 3 The research on the transparent conductivity of thin films is based on element doping research, while for undoped BaSnO 3 Research on the conductivity of thin films has not been reported
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[0024] An undoped transparent conductive oxide film with a perovskite structure, the preparation steps are as follows:
[0025] 1. Preparation of high-purity BaSnO by high-temperature solid-state reaction method 3 Ceramic target material:
[0026] Barium carbonate BaCO with a purity greater than 99.5% 3 and purity greater than 99.5% tin dioxide SnO 2 The powder is weighed according to the mass ratio of 1:1, and then pre-fired in a high-temperature furnace at 1300°C and 1400°C respectively, and finally the pre-fired material is ground and pressed into a circle with a diameter of 1 inch and a thickness of about 3mm. flakes, and then calcined at 1500 °C for 24 hours in an air atmosphere to prepare dense BaSnO 3 ceramic target material.
[0027] 2. Preparation of undoped BaSnO with perovskite structure on MgO single crystal substrate by pulsed laser deposition (PLD) under different oxygen pressure conditions 3 film:
[0028] In this embodiment, a transparent single-sided pol...
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Abstract
The present invention discloses an undoped transparent electric conduction oxide film having a perovskite structure, wherein BaCO3 powder with a purity of more than 99.5% and SnO2 powder with a purity of more than 99.5% are taken according to a ratio of 1:1 and are pre-burned respectively at a temperature of 1300 DEG C and a temperature of 1400 DEG C, the pre-burned materials are pressed into a round sheet, the round sheet is calcined to prepare a compact BaSnO3 ceramic target, and the obtained target is placed into a pulse laser deposition system to prepare the undoped transparent electric conduction oxide film having the perovskite structure on a MgO single crystal substrate. According to the present invention, the preparation oxygen pressure of the film is changed so as to increase the epitaxial film growth quality and reduce the interface defect, such that the performance is improved; and the pulse laser is utilized to deposit the film under the oxygen pressure of 0.3 Pa, and the room temperature conductivity is 8.07*10<-4> [omega]cm, wherein the visible optical transmittance is not reduced, and the low resistivity is provided, such that the novel transparent electric conduction oxide film and the applications of the novel transparent electric conduction oxide film provide important significance.
Description
technical field [0001] The invention relates to an undoped transparent conductive oxide thin film with a perovskite structure, belonging to the technical field of transparent conductive oxide thin films. Background technique [0002] As the third-generation semiconductor material, wide bandgap semiconductor has a series of advantages such as wide band gap, high carrier mobility and good thermal conductivity, and is suitable for making high-frequency, high-power and high-integration electronic devices. Transparent conductive oxide film (TCO), as a unique film material, has both high electrical conductivity and high transmittance in the visible region, and has been widely used in flat panel displays, solar cells, optoelectronic devices, etc., and has attracted much attention. Common transparent conductive films are ZnO, SnO2 and In based on wide bandgap oxide doping 2 o 3 : Sn(ITO), etc. The most widely used TCO film for a long time is ITO, but due to the shortage of In ore...
Claims
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IPC IPC(8): C23C14/28C23C14/08
Inventor 刘亲壮李兵
Owner HUAIBEI NORMAL UNIVERSITY