Nano dielectric layer preparation method based on thermal oxidation process

Abstract

A nano dielectric layer preparation method based on a thermal oxidation process of the invention belongs to the technical field of microelectronics, solid-state electronics and nano science. A square mask window is opened on a base metal layer by electron beam lithography. The base metal layer exposed at the mask window is oxidized by a thermal oxidation method. The specific process conditions are as follows: a silicon wafer is put in a drying oven and heated at 150-200 DEG C for 15-60min, the silicon wafer is immersed in butanone reagent for heating and ultrasonic processing, and mask stripping is completed. Characterization results show that the nano dielectric layer preparation method based on a thermal oxidation process can be used to prepare a dielectric layer film with certain oxidation ratio and certain thickness successfully. A dielectric layer is generated on the surface of the base metal layer in one step through in-situ oxidation. The preparation process is simple. No material needs to be added. The interface is highly coherent and has fewer defects. The method is expected to be widely used in scientific research and production.

Description

technical field [0001] The invention relates to a method for preparing a nano medium layer based on a thermal oxidation process, and belongs to the fields of microelectronics, solid electronics and nano science and technology. Background technique [0002] Tunneling diode (TD) is a new type of high-speed nano-device composed of quantum effect, which has high-frequency rectification characteristics. Commonly used tunneling diodes include resonant tunneling diode (RTD) and material-insulator-material tunneling diode (MIM-TD). Among them, MIM-TD has a simple structure and has attracted extensive attention. The intermediate insulating layer of MIM-TD is very thin. Under the action of tunneling effect, electrons can easily move from one layer of conductive material to another layer of conductive material. The tunneling time is as short as femtoseconds, which makes MIM-TD TD becomes the best choice for high frequency rectification. [0003] Generally, vacuum deposition methods, ...

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Problems solved by technology

If such a method is selected, additional target material needs to be prepared during the preparation of the dielectric layer, which makes the preparation of the dielectric layer complicated, and theoretically there are interface defects between the metal and the dielectric layer, which will affect the rectification function in severe cases

[0004] Based on the above, the current MIM-TD dielectric layer preparation process is complex, requiring large-scale equipment such as magnetron sputtering or atomic layer deposition, and additional target materials are required, which will lead to high cost in the device manufacturing process

At the same time, in the above manufacturing process, the possible interface defects are not conducive to obtaining devices with excellent performance

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