Preparation method for TiN film with thickness of 21.5mu m

A kind of equipment and film layer technology, which is applied in the field of TiN film preparation, can solve the problems that TiN hard film cannot be prepared, and achieve good practical value, market application prospect and excellent binding force

Inactive Publication Date: 2015-09-16
陕西航天导航设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a method for preparing a TiN film with a thickness of 21.5 μm, which solves the problem that the hard film thickness of TiN cannot be prepared above 8 μm, and obtains a TiN film with excellent properties such as film thickness, hardness, and bonding force

Method used

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Embodiment Construction

[0025] The present invention will be described in detail below in combination with specific embodiments.

[0026] A method for preparing a TiN film with a thickness of 21.5 μm, comprising: step S1, providing a part to be coated and a vacuum arc ion plating equipment, and putting the part to be coated into a chamber of the vacuum arc ion plating equipment.

[0027] Step S2, vacuumize and heat-treat the chamber, and when the temperature and vacuum degree of the chamber reach a set value, the tooling turntable in the chamber holds the parts to be coated and rotates at a constant speed;

[0028] The temperature setting value of the chamber is 360-400° C., and the vacuum degree setting value of the chamber is 4×10 -5 mbar.

[0029] Step S3, open the argon gas valve pipeline, fill the chamber with argon gas, set the process parameters: bias voltage 200V, current 10A, frequency 40KHZ, turn on the etching power supply to perform argon ion etching on the parts to be coated.

[0030]...

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Abstract

The invention discloses a preparation method for a TiN film with the thickness of 21.5mu m. The TiN film with the thickness of 21.5mu m is prepared by virtue of a vacuum arc ion plating technology, and the current situation that TiN hard films with thicknesses of more than 8mu m cannot be prepared is solved, and the TiN film with excellent performances such as thickness, hardness and binding force is obtained through selective adjustment for process parameters and reasonable design for a process method in the arc ion plating technology, and by overcoming the various problems of material deformation, film layer internal stress concentration, high breakage possibility of a film layer at a sharp-edge included angle, long-time thick film deposition and the like on a powder metallurgy material GT35. The preparation method disclosed by the invention is capable of providing a production technology support for the design requirement of plating a TiN thick film on a hemispherical dynamic pressure motor component, namely, a spherical bowl in the field of the space technology, and has great practical values and market application prospects for the development of the space technology.

Description

technical field [0001] The invention belongs to the technical field of component coating layers, and in particular relates to a method for preparing a TiN film with a thickness of 21.5 μm. Background technique [0002] The growth of the TiN hard film basically forms a NaCl type face-centered cubic crystal structure by mixing ionic bonds and covalent bonds. It has the characteristics of high hardness, high melting point, good toughness, excellent oxidation resistance, good electrical and thermal conductivity, good biocompatibility, low coefficient of friction and excellent bonding force with the substrate, and is widely used in machinery Processing and manufacturing, auto parts, aerospace devices, medical, microelectronics and corrosion protection and other fields. And with the continuous development and expansion of physical vapor deposition (PVD), chemical vapor deposition (CVD) technology and TiN film performance, its application in various fields is quietly undergoing ma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/32
Inventor 赵显伟毕新儒
Owner 陕西航天导航设备有限公司
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