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A kind of manufacturing method of 3D magnetic sensor

A technology of magnetic sensor and manufacturing method, which is applied in the manufacture/processing of electromagnetic devices, instruments, and measurement of magnetic variables, etc., which can solve problems affecting the process, dirty parts of devices, and polluting machines, so as to reduce roughness and sputtering accumulation Phenomenon slight effect

Active Publication Date: 2017-11-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And this Ta-based polymer will not only pollute the machine, but also seriously affect the subsequent process, causing the generation of dirty spots on the device. Therefore, it is necessary to invent a process that can reduce or even completely remove the Ta-based polymer reverse deposition. Phenomenon

Method used

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  • A kind of manufacturing method of 3D magnetic sensor
  • A kind of manufacturing method of 3D magnetic sensor
  • A kind of manufacturing method of 3D magnetic sensor

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Embodiment 1

[0044] Please refer to Figure 5 , and combined with Figures 6 to 11 , the present invention provides a kind of manufacturing method of 3D magnetic sensor, comprises the following steps:

[0045] Please refer to Figure 6 , provide a substrate 300, deposit an insulating layer 302 on the substrate 300, and make a trench 301 in the insulating layer 302, the depth of the trench 301 is smaller than the thickness of the insulating layer 302, that is to say, the bottom of the trench 301 Instead of the upper surface of the substrate 300, the trenches 301 provide sidewalls for forming the magnetoresistive layer of the 3D magnetic sensor.

[0046] Preferably, the material of the substrate 300 is silicon, germanium, or a layer of silicon covered on an insulator as the substrate.

[0047] The way to form the trench 301 is: use thermal oxidation growth or chemical vapor deposition process to form an insulating layer 302 on the substrate 300, cover the insulating layer 302 with a photo...

Embodiment 2

[0066] The difference between this embodiment and the first embodiment is that before depositing the magnetic material layer 303 , a diffusion barrier layer is deposited, and the diffusion barrier layer covers the insulating layer 302 and the bottom and sidewalls of the trench 301 .

[0067] Specifically, the material of the diffusion barrier layer is silicon nitride, and the formation method is chemical vapor deposition. The diffusion barrier layer can prevent the elements in the magnetic material layer 303 from diffusing into the insulating layer 302, especially metal ions, and avoid the insulation of the insulating layer 302. The effect is invalid.

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Abstract

The invention discloses a manufacturing method of a 3D magnetic sensor. After forming an insulating layer on a semiconductor substrate, making an insulating layer trench, and then sequentially depositing a magnetic material layer, a TaN layer, an etching barrier layer, a filling material layer and a patterned The photoresist layer is then etched vertically on the etch barrier layer and part of the TaN layer, and isotropically etched on the remaining TaN layer. The present invention changes the process steps of etching the TaN layer and the etching barrier layer in the prior art to vertically etch the etching barrier layer and part of the TaN layer first, so as to ensure the flat shape of the groove and reduce the roughness of the side wall. Then use a small bias power to perform isotropic etching on the remaining TaN layer. This etching method can make the sputtered polymer evenly distributed, reduce polymer accumulation, and be more conducive to being etched away, so as to achieve The purpose of eliminating polymer deposition is to reduce and avoid pollution to the machine, thereby improving the process yield.

Description

technical field [0001] The invention relates to a manufacturing method of a magnetic sensor, in particular to a manufacturing method of a 3D magnetic sensor. Background technique [0002] A magnetic sensor is a device that can convert various magnetic fields and their changes into electrical signal output. Magnetic sensors include giant magnetoresistive sensors (Giant Magneto Resistive Sensor, GMR), isotropic magnetoresistive sensors (Anisotropic Magneto Resistive Sensor, AMR )Wait. Taking the isotropic magnetoresistive sensor as an example, the nickel-iron alloy layer is used as the magnetoresistive layer. When an external magnetic field is applied to the magnetoresistive layer, the magnetic domains of the magnetoresistive layer rotate, causing the resistance of the magnetoresistive layer to change, and the change in the resistance of the magnetoresistive layer is reflected in the change of the output voltage to achieve the purpose of detecting the external magnetic field....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/12G01R33/09H10N50/01
Inventor 张振兴奚裴熊磊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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