Ultra-thin single crystal copper flat silk ribbon and preparation method thereof

A technology of single crystal copper and copper flat wire, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc., can solve the problems of ineffective use, unevenness of lead wires, rise, etc., and achieve easy promotion and use, The effect of reasonable ratio of raw materials and simple process flow

Inactive Publication Date: 2015-10-21
ANHUI JIEAO ELECTRONICS CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the development of the market and technology, the function of the chip is continuously enhanced, the number of leads is increasing, and the volume is getting smaller and smaller, which leads to the continuous increase of the area ratio of the pad in the entire chip. Therefore, research on ultra-fine pitch bonding Technology is a key technology that mu

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Take by weighing 99.99.g of single crystal copper and 0.01g of auxiliary materials, (the auxiliary materials are carried out according to the composition of 0.5 parts of iron, 1.5 parts of copper, 1 manganese, 2 parts of magnesium, 1 part of chromium, 3 parts of titanium, 2 parts of beryllium, 3 parts of aluminum and 2 parts of zinc. configuration), and then choose a vacuum furnace, put the single crystal copper in the raw material into the vacuum furnace, adjust the temperature in the furnace to 800°C, and carry out high-temperature melting. During the melting process, nitrogen and argon should be injected for protection; After the single crystal copper is completely smelted, the auxiliary materials in the raw materials are added into the furnace in turn, and the speed is controlled to 2500r / min for high-speed stirring. After stirring evenly, let it stand for 55 minutes; and then cast a single crystal with a diameter of 8mm through the casting mold Copper rods, and then...

Embodiment 2

[0021] Take by weighing 99.99g of single crystal copper and 0.01g of auxiliary materials, (the auxiliary materials are based on 1 part of iron, 2 parts of copper, 2 parts of manganese, 3 parts of magnesium, 2.5 parts of chromium, 2.5 parts of titanium, 3 parts of beryllium, 4 parts of aluminum, zinc 3.5 components for configuration), and then select a vacuum furnace, put the single crystal copper in the raw material into the vacuum furnace, adjust the temperature in the furnace to 1000°C, and carry out high-temperature smelting. During the smelting process, nitrogen and Protected by argon gas; after the single crystal copper is completely smelted, the auxiliary materials in the raw materials are sequentially added into the furnace, and the speed is controlled to be 2650r / min for high-speed stirring. After stirring evenly, let it stand for 55 minutes; A single crystal copper rod with a diameter of 8mm is then cooled naturally; the 8mm single crystal copper rod is drawn into a th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to view more

Abstract

The invention provides an ultra-thin single crystal copper flat silk ribbon and relates to the field of bonding lead production technology. The silk ribbon is made of single crystal copper and auxiliary materials, wherein the ratio of platinum-rhodium to the auxiliary materials is 99.99:0.01. The auxiliary materials comprise, by weight, 0.5-1.5 parts of iron, 1.5-2.5 parts of copper, 1-3 parts of manganese, 2-4 parts of magnesium, 1-4 parts of chrome, 3-4 parts of titanium, 2-4 parts of beryllium, 3-5 parts of aluminum and 2-5 parts of zinc. The beneficial effects are that technical processes are simple and raw material ratio is proper; the bonding silk is made with the proper ratio of single crystal copper and auxiliary materials in orderly steps, so product quality is high, fineness is high, requirements in current electronic industry are met, and the silk ribbon is especially suitable for semiconductor high-power integrated circuit elements, has remarkable effects in use and is easy to promote and use.

Description

technical field [0001] The invention relates to the technical field of bonding wire production, in particular to an ultra-fine single crystal copper flat ribbon and a preparation method thereof. Background technique [0002] Bonding wires are widely used in LEDs and semiconductor integrated circuits, such as consumer ICs: computers, mobile phones, televisions and other chips. Industrial IC: large-scale servers, motors, smart instruments, storage, medical equipment and other chips, and electronic packaging such as solar photovoltaics and diode transistors. [0003] With the development of the market and technology, the function of the chip is continuously enhanced, the number of leads is increasing, and the volume is getting smaller and smaller, which leads to the continuous increase of the area ratio of the pad in the entire chip. Therefore, research on ultra-fine pitch bonding Technology is a key technology that must be solved to solve the miniaturization of chips, but the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/49H01L21/48
CPCH01L24/35H01L24/37H01L2224/37147H01L2924/01029
Inventor 范国伟范长云
Owner ANHUI JIEAO ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap