Preparation method of diamond/silicon carbide three-dimensional composite structure and prepared product

A three-dimensional composite, diamond technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem that it cannot be used for metal matrix containing graphite phase catalytic effect, and achieve controllable and controllable growth conditions. High-quality, wide-ranging effects

Inactive Publication Date: 2015-11-11
姜辛 +2
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a diamond/silicon carbide film for the existing microcrystalline/nanocrystalline diamond multilayer film structure which strongly depends on t

Method used

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  • Preparation method of diamond/silicon carbide three-dimensional composite structure and prepared product
  • Preparation method of diamond/silicon carbide three-dimensional composite structure and prepared product
  • Preparation method of diamond/silicon carbide three-dimensional composite structure and prepared product

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preparation example Construction

[0059] In the preparation method of the diamond / cubic silicon carbide three-dimensional composite structure established according to the present invention, the cleaned matrix material is put into chemical vapor deposition equipment, and the vapor deposition equipment includes: microwave plasma chemical vapor deposition and hot wire chemical vapor deposition .

[0060] In the preparation method according to the present invention, when the temperature of chemical vapor deposition is 600-1000°C, preferably 700-900°C, and more preferably 750-850°C. When the temperature is higher than 1000°C or lower than 600°C, the growth of diamond is inhibited, so that the diamond / cubic silicon carbide three-dimensional composite structure cannot be obtained.

[0061] In the preparation method of the diamond / cubic silicon carbide three-dimensional composite structure established according to the present invention, when microwave plasma equipment is selected for deposition, when the microwave pow...

Embodiment 1

[0066] The 10×10mm Si substrate was ultrasonically cleaned with acetone, ethanol, and distilled water for 10 minutes, and then dried with high-purity nitrogen. Put the cleaned Si substrate into the microwave plasma vapor deposition equipment, and evacuate the equipment so that the pressure in the chamber is less than 1×10 -2 Torr, pass hydrogen to 40Torr, and heat the substrate to 850°C at the same time to trigger the reaction of gas molecules. Then the microwave power was fixed to 1800W, and 30 sccm of tetramethylsilane was passed through to deposit cubic silicon carbide. After 1 hour of deposition, turn off the tetramethylsilane, turn on the regulated DC power supply, adjust the voltage value to 200V, and pass 10 sccm of methane gas to start the nucleation of diamond. After 10 minutes, adjust the voltage value to 0V and turn off the DC power supply. Then adjust the flow of methane gas to 4 sccm, and start to deposit the diamond layer. After 1 h of deposition, the methane ...

Embodiment 2

[0070] The 10×10mm Si substrate was ultrasonically cleaned with acetone, ethanol, and distilled water for 10 minutes, and then dried with high-purity nitrogen. Put the cleaned Si substrate into the microwave plasma vapor deposition equipment, and evacuate the equipment so that the pressure in the chamber is less than 1×10 -2 Torr, pass hydrogen to 25 Torr, while heating the substrate to 750°C. Then microwave plasma was excited, and the microwave power was fixed to 1000W, and 30 sccm of tetramethylsilane was passed through to deposit cubic silicon carbide. After 45 minutes of deposition, turn off the tetramethylsilane, turn on the regulated DC power supply, adjust the voltage value to 120V, and pass 8 sccm of methane gas to start the nucleation of diamond. After 12 minutes, adjust the voltage value to 0V and turn off the DC power supply. Then adjust the methane gas flow rate to 6 sccm, and start to deposit the diamond layer. After 45 minutes of deposition, the methane gas wa...

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Abstract

The invention discloses a preparation method of a diamond/silicon carbide three-dimensional composite structure and a prepared product, and aims to solve the problem that a traditional micron crystal/nanometer crystal diamond multilayer film structure cannot be applied to a metal matrix containing a graphite phase catalytic effect due to strong dependence on the material type of the matrix. Under the condition of no need of additional matrix pretreatment, the preparation method realizes one-step intermittent growth of a diamond/cubic silicon carbide three-dimensional composite structure on multiple matrix materials (such as stainless steel, WC-Co, Si3N4 and the like), so that the treatment procedures are effectively reduced, the growth time is shortened, and the labor cost is saved. Meanwhile, the prepared three-dimensional composite structure can prominently improve the adhesivity, the wear resistance and the fracture toughness of coatings on the surface of the matrix, satisfies the application demands in the high-performance surface coating field, is better in application prospect, and is worthy of large-scale promotion and application.

Description

technical field [0001] The invention relates to the field of materials, especially the field of diamond materials, and specifically relates to a method for preparing a diamond / silicon carbide three-dimensional composite structure and a product prepared therefrom. Background technique [0002] As the hardest material in the world, diamond is considered an ideal coating material for cutting tools and mechanical components. Research on CVD diamond coatings started around 1981 and made significant progress in the 1990s. Diamond growth requires extremely harsh conditions, and at the same time, graphite phases are easily formed during the growth process, so there are still some urgent problems to be solved in order to obtain diamond coatings for high-performance cutting tools. In addition, there is a large difference in thermal expansion coefficient and hardness between diamond and the metal base material, which makes it difficult to obtain a firmly adhered diamond coating on the...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/32C23C16/44
Inventor 姜辛熊鹰庄昊
Owner 姜辛
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