Method for improving the performance of gallium nitride laser

Abstract

The invention discloses a gallium nitride laser and a fabrication method thereof. The method comprises the following steps of: 1, sequentially fabricating a n-type limitation layer, a n-type waveguide layer, a quantum well active region, an electron barrier layer, an insertion layer, a p-type waveguide layer, a p-type limitation layer and a p-type contact layer on a gallium nitride substrate; 2, leading the P-type contact layer and the P-type limitation layer to form ridge shapes by wet etching or dry etching; 3, growing a layer of oxidation film on the fabricated ridge shapes, and fabricating a p-type ohmic electrode by using a photoetching method; 4, fabricating the gallium nitride substrate thinner and washing, and fabricating an n-type ohmic electrode on the gallium nitride substrate; and 5, carrying out cleavage and film coating, and finally packaging the gallium nitride substrate on a tube shell to make the gallium nitride laser. In the laser proposed by the invention, with the introduction of the insertion layer, two advantages can be brought to the structure: 1, hole injection is facilitated; and 2, effective potential barrier of an electron is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a design and manufacturing method of a gallium nitride-based laser with improved performance. Background technique [0002] With the rapid development of semiconductor optoelectronic devices, gallium nitride semiconductor lasers came into being. Gallium nitride lasers, especially in the blue-violet light band, can provide smaller spot size and greater depth of focus than red and infrared lasers, so that higher resolution, faster laser printing and high density There are a wide range of applications in storage systems. In addition, the combination of blue lasers with existing red and green lasers has broad prospects in the fields of projection display and full-color printing. Therefore, people have higher requirements on the performance of gallium nitride lasers. [0003] The gallium nitride-based laser material layer is mainly divided into three pa...

AI Technical Summary

Problems solved by technology

[0004] Although the introduction of the electron blocking layer AlGaN can reduce electron leakage, there are also two negative effects

First, due to the strong polarization of the electron blocking layer AlGaN, the conduction band of the last quantum barrier is bent downward, which makes it easy for the quasi-Fermi level of electrons to enter the conduction band, reducing the effective barrier of electrons

Second, due to the large band gap of the electron blocking layer, the valence band introduces a band step, which hinders the injection of holes.

However, in these solutions, only one of the negative effects is unilaterally improved, and the other negative effect is not dealt with, and the other negative effect is even exacerbated.

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