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Modified electronic ceramic material and preparation method thereof

A technology of electronic ceramics and modification, which is applied in the field of modified electronic ceramic materials and its preparation, can solve the problems of insufficient toughness and poor temperature stability, and achieve good temperature stability and toughness

Inactive Publication Date: 2015-11-25
苏州凯欧曼新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the development of electronic information is getting faster and faster, and the requirements for electronic components are getting higher and higher. Miniaturization, thin film, multi-function, etc. have become the direction of future development. However, the current electronic ceramic materials have poor temperature stability and toughness. Insufficient and other shortcomings, unable to meet the requirements of stricter occasions

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Add 45 parts of titanium oxide, 20 parts of zirconium silicate, 4 parts of calcium oxide, 3 parts of magnesium salicylate, 0.2 parts of tungsten oxide and 0.8 parts of holmium nitride into the mixer for mixing, and the speed is 100r / min, the temperature is 25°C, the mixing time is 10min, and the material A is obtained;

[0024] (2) Add 10 parts of material A and 3-hydroxy-3-methyl-2-butanone described in step (1) into the stirring device, and stir and react at a temperature of 110°C at a speed of 100r / min for 20min;

[0025] (3) Lower the temperature of the stirring device described in step (2) to 60°C and keep it warm for 5 minutes; add 5 parts of strontium barium niobium oxide and 3.5 parts of antimony potassium tartrate into the stirring device described in step (2), at a speed of Stir and react at 180r / min for 30min to obtain material B;

[0026] (4) After ball milling, molding and drying the material B mentioned in step (3), it is calcined twice in a muffle f...

Embodiment 2

[0033] (1) Add 70 parts of titanium oxide, 40 parts of zirconium silicate, 12 parts of calcium oxide, 8 parts of magnesium salicylate, 0.8 parts of tungsten oxide and 2.7 parts of holmium nitride into the mixer for mixing, and the speed is 150r / min, the temperature is 28°C, the mixing time is 15min, and the material A is obtained;

[0034] (2) Add 25 parts of material A and 3-hydroxy-3-methyl-2-butanone described in step (1) into the stirring device, and stir and react at a temperature of 150°C at a speed of 140r / min for 45 minutes;

[0035] (3) Lower the temperature of the stirring device described in step (2) to 80°C, and keep it warm for 10 minutes; add 15 parts of niobium barium strontium oxide and 8.5 parts of antimony potassium tartrate into the stirring device described in step (2), at a speed of Stir and react at 250r / min for 50min to obtain material B;

[0036] (4) After ball milling, molding and drying the material B mentioned in step (3), it is calcined twice in a...

Embodiment 3

[0039] (1) Add 55 parts of titanium oxide, 30 parts of zirconium silicate, 6 parts of calcium oxide, 5 parts of magnesium salicylate, 0.4 parts of tungsten oxide and 1.8 parts of holmium nitride into the mixer for mixing, and the speed is 130r / min, the temperature is 28°C, the mixing time is 15min, and the material A is obtained;

[0040] (2) Add material A and 15 parts of 3-hydroxy-3-methyl-2-butanone described in step (1) into the stirring device, and stir and react at a temperature of 125°C at a speed of 120r / min for 30min;

[0041] (3) Lower the temperature of the stirring device described in step (2) to 80°C, and keep it warm for 10 minutes; add 8 parts of strontium barium niobium oxide and 5 parts of antimony potassium tartrate into the stirring device described in step (2), at a speed of Stir and react at 210r / min for 40min to obtain material B;

[0042] (4) After ball milling, molding and drying the material B mentioned in step (3), it is calcined twice in a muffle f...

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Abstract

The invention discloses a modified electronic ceramic material and a preparation method thereof. The modified electronic ceramic material comprises 45-70 parts of titanium oxide, 20-40 parts of zirconium silicate, 4-12 parts of calcium oxide, 3-8 parts of magnesium salicylate, 2-6 parts of acetylene black, 0.2-0.8 part of tungsten oxide, 0.8-2.7 parts of holmium nitride, 5-15 parts of niobium strontium barium oxide, 10-25 parts of 3-hydroxy-3-methyl-2-butanone and 3.5-8.5 parts of potassium antimony tartrate. The preparation method comprises the following steps: mixing raw materials, carrying out ball milling, forming, drying and calcining in a muffle furnace to obtain the modified electronic ceramic material. The modified electronic ceramic material has favorable temperature stability and toughness, and can well satisfy the demands of partial special occasions. The insulation resistance of the modified electronic ceramic material is 1.2-1.6*10<10>ohm.cm, the capacitance temperature change rate is 3-10 ppm / DEG C, and the elongation at break is 150-170%.

Description

technical field [0001] The invention belongs to the field of electronic ceramic materials, and in particular relates to a modified electronic ceramic material and a preparation method thereof. Background technique [0002] Electronic ceramic materials mainly refer to a class of ceramics with electromagnetic and other functions. Its dielectric properties and electrical conductivity can be adjusted in a wide range. It is one of the most dynamic materials among special ceramic materials and has attracted wide attention. It can be applied in many fields such as electronics, communication, automatic control, information computer, automobile, aviation, etc., and has significant social and economic benefits. At present, the development of electronic information is getting faster and faster, and the requirements for electronic components are getting higher and higher. Miniaturization, thin film, multi-function, etc. have become the direction of future development. However, the curre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/46C04B35/622
Inventor 费根华
Owner 苏州凯欧曼新材料科技有限公司
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