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Negative type photosensitive organic-inorganic hybrid insulating film composition

A photosensitive, insulating film technology, applied in the direction of organic insulators, insulators, plastic/resin/wax insulators, etc., can solve the problems of reduced aperture ratio of displays, large area of ​​evaporation equipment, poor electrical properties of displays, etc., to achieve excellent panel reliability performance, process simplification and reduction of power consumption

Active Publication Date: 2015-12-23
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the case of a SiNx film, it is formed by CVD processing, and in the case of an acrylic photosensitive organic insulating film, it is formed by photo (Photo) processing, so the productivity problem caused by the processing time is serious
[0003] For the conventional insulating film, when the SiNx film formed by the above-mentioned CVD is formed alone, there is a problem that the aperture ratio of the display decreases, and as the size of the display (Display) increases, the area occupied by the evaporation equipment in the production line is very large , resulting in a large burden when the equipment is enlarged
In addition, when an acrylic photosensitive organic insulating film that has been optically processed in the past is formed alone, it will cause electrical defects in the display due to image sticking, crosstalk (Crosstalk), and threshold voltage shift (Shift) phenomena.
The reason for this is known to be current leakage caused by defects in the film, which is a defect unique to organic substances.

Method used

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  • Negative type photosensitive organic-inorganic hybrid insulating film composition
  • Negative type photosensitive organic-inorganic hybrid insulating film composition
  • Negative type photosensitive organic-inorganic hybrid insulating film composition

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0091] Synthesis Example 1 : Production of siloxane copolymer (A)

[0092]30 parts by weight of phenyltriethoxysilane, 50 parts by weight of tetraethoxysilane and 20 parts by weight of acryloyloxypropyl trimethoxysilane were respectively put into a flask equipped with a cooling tube and a stirrer as a reactive silane, and 100 parts by weight of ethanol was put in as a solvent, and it stirred slowly after replacing with nitrogen. After adding 40 parts by weight of ultrapure water and 3 parts by weight of oxalic acid as a catalyst to the reaction solution, the mixture was stirred again slowly. One hour later, the temperature of the reaction solution was raised to 60° C., and the temperature was maintained for 10 hours to carry out solution polymerization, and then cooled to normal temperature to complete the reaction. Further, it was quenched to below 0° C. to precipitate the reactants. In addition, after removing the supernatant containing unreacted silane, the alcohol solve...

Synthetic example 2

[0093] Synthesis example 2 : Production of siloxane copolymer (B)

[0094] 30 parts by weight of phenyltriethoxysilane, 50 parts by weight of tetraethoxysilane and 20 parts by weight of acryloyloxypropyl trimethoxysilane were respectively put into a flask equipped with a cooling tube and a stirrer as a reactive silane, and The solvent was not put in, and it stirred slowly after replacing with nitrogen. After adding 40 parts by weight of ultrapure water and 2 parts by weight of nitric acid as a catalyst to the reaction solution, the mixture was stirred again slowly. One hour later, the temperature of the reaction solution was raised to 60° C., and the temperature was maintained for 10 hours to perform bulk polymerization, and then cooled to normal temperature to complete the reaction. Further, it was quenched to below 0° C. to precipitate the reactants. In addition, after removing the supernatant containing unreacted silane, the alcohol solvent and residual moisture generat...

Synthetic example 3

[0095] Synthesis example 3 : Production of siloxane copolymer (C)

[0096] In the above Synthesis Example 1, 40 parts by weight of diphenyldimethoxysilane, 40 parts by weight of tetraphenoxysilane and 20 parts by weight of vinyltriethoxysilane were respectively put into a flask equipped with a cooling tube and a stirrer as Reactive silane was carried out in the same manner as in Synthesis Example 1 above except for this. As a result of the final GPC analysis, a siloxane copolymer having a polystyrene-equivalent weight average molecular weight (MW) of 13,000 was produced.

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Abstract

The present invention relates to a negative type photosensitive organic-inorganic hybrid insulating film composition. The negative type photosensitive organic-inorganic hybrid insulating film composition according to the present invention can achieve process simplification and production cost reduction by forming an existing double structure having a SiNx passivation and an acryl-based photosensitive organic insulating film into one layer; can exhibit excellent capabilities in sensitivity, resolution, process margin, transparency, heat discoloration resistance, flatness, and the like; can lower the power consumption by enabling the formation of a low-dielectric insulating film; and can remove afterimage, crosstalk, and threshold voltage shift phenomena. Further, the composition according to the present invention enables low outgassing due to excellent heat resistance, thereby ensuring superior panel reliability, and thus can be usefully applied to a passivation insulating film, a gate insulating film, a polarizing film, and the like in various displays.

Description

technical field [0001] The present invention relates to a negative photosensitive organic-inorganic hybrid insulating film composition. More specifically, it relates to the following negative photosensitive organic-inorganic hybrid insulating film composition: the conventional SiNx passivation (Passivation) / acrylic The double-layer structure of the photosensitive organic insulating film is formed into a single layer (layer) to simplify the process and reduce the production cost, and not only excellent in sensitivity, resolution, process margin, transparency, thermal discoloration resistance, flatness, etc. , in particular, a low permittivity insulating film can be realized, so that power consumption can be reduced, and image sticking, crosstalk (Crosstalk) and threshold voltage shift (Shift) can be eliminated. In addition, due to excellent heat resistance, low drop-off Outgassing, so it can ensure excellent panel reliability, so it can be effectively used not only in passivati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B3/18C08L83/04H01B17/56G09F9/00
CPCC08L83/04H01B3/46G09F9/00H01B3/18H01B17/56
Inventor 吕泰勋尹赫敏李相勋金珍善尹柱豹金东明黄致容金南伊边正铉
Owner DONGJIN SEMICHEM CO LTD
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