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Nitride phosphor powder for liquid crystal backlight and preparation method thereof

A nitrogen oxide and phosphor technology, applied in the field of phosphors, can solve the problems that the activator cannot fully enter the crystal lattice, affect the luminous intensity of the phosphors, and the luminous performance of the phosphors is low, and achieves good reduction effect, low cost, and improved performance. The effect of fluorescent properties

Active Publication Date: 2017-03-22
JIANGSU BREE OPTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this solution, due to the large range of z values, when z>0.5, it is very easy to cause Eu not to completely enter the lattice, thereby affecting the luminous intensity; in addition, if the z value is too large, the product is easy to produce impurities such as 12H, 21R and 27R. Phase, which affects the luminous intensity of the phosphor
[0008] Chinese patent application 201080054430.1 discloses a divalent europium-activated nitrogen oxide green light-emitting phosphor of β-type SiAlON, which consists of Eu a Si b al c o d N e , where 0.005≤a≤0.4, b+c=12, d+e=16, this scheme is weighed according to the stoichiometric ratio, resulting in the activator Eu not being able to fully enter the crystal lattice, and the luminescence performance of the phosphor is low
The main disadvantages of this patent are: first, the z value is too large, which is easy to generate impurities; second, the sol-gel method is used for synthesis. Compared with the traditional high-temperature solid-phase method, the luminous intensity of the obtained phosphor is low.

Method used

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  • Nitride phosphor powder for liquid crystal backlight and preparation method thereof
  • Nitride phosphor powder for liquid crystal backlight and preparation method thereof
  • Nitride phosphor powder for liquid crystal backlight and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Weigh Si 3 N 4 19.136g, AlN0.247g, Al 2 o 3 0.307g, EuCl 3 0.311g, then add 0.1% NH 4 Cl is the flux, and the above raw materials are fully mixed evenly, put into a boron nitride crucible, and then quickly moved into a tube furnace, and then gradually heated up to 800°C in a vacuum state, with a heating rate of 15°C / min, and then Gradually introduce high-purity nitrogen gas to a pressure of 0.3MPa, raise the temperature to 1300°C, and the heating rate is 10°C / min, then gradually pressurize to a pressure of 0.8MPa, raise the temperature to 1980°C, the heating rate is 6°C / min, and keep warm for 7 hours , after cooling, grind and sieve, wash with 2% nitric acid, stir for 30min, and finally wash with deionized water until the conductivity is 4.2μs / cm, and dry to obtain Si 6.8 Al 0.2 o 0.2 N 9.13 :Eu 0.02 Nitride phosphors. The emission main peak and luminous intensity are shown in Table 1, both of which are higher than those of Comparative Example 1. Emission spe...

Embodiment 2

[0049] Weigh Si 3 N 4 19.034g, AlN0.385g, Al 2 o 3 0.319g, EuF 3 0.262g, then add 0.1% NH of the total mass of the above raw materials 4 Cl is the flux, and the above raw materials are fully mixed evenly, put into a boron nitride crucible, and then quickly moved into a tube furnace, and then gradually heated up to 800°C in a vacuum state, with a heating rate of 15°C / min, and then Gradually introduce high-purity nitrogen gas to a pressure of 0.3MPa, raise the temperature to 1300°C, and the heating rate is 10°C / min, then gradually pressurize to a pressure of 0.8MPa, raise the temperature to 1980°C, the heating rate is 6°C / min, and keep warm for 7 hours , after cooling, grind and sieve, wash with 2% nitric acid, stir for 30min, and finally wash with deionized water until the conductivity is 5.1μs / cm, and dry to prepare Si 6.5 Al 0.25 o 0.25 N 8.75 :Eu 0.02 Nitride phosphors. The emission main peak and luminous intensity are shown in Table 1, both of which are higher tha...

Embodiment 3

[0051] Weigh Si3N419.327g, AlN0.339g, Al2O30.14g, Eu2O30.194g, then add 0.1% NH4Cl of the total mass of the above raw materials as a flux, mix the above raw materials uniformly, put them into a boron nitride crucible, and then It quickly moved into the tube furnace, and then gradually heated up to 800°C in a vacuum state with a heating rate of 15°C / min, then gradually introduced high-purity nitrogen to a pressure of 0.3MPa, and raised the temperature to 1300°C with a heating rate of 10°C / min. min, then gradually increase the pressure to 0.8MPa, raise the temperature to 1980°C, the heating rate is 6°C / min, keep the heat for 7 hours, grind and sieve after cooling, wash with 2% nitric acid, stir for 30min, and finally use Wash with deionized water until the conductivity is 4.7 μs / cm, and dry to prepare Si7.5Al0.2O0.2N10.07:Eu0.02 nitrogen oxide phosphor. The emission main peak and luminous intensity are shown in Table 1, and the luminous intensity is higher than that of Comparati...

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Abstract

The invention discloses nitrogen oxide fluorescent powder for a liquid crystal backlight and a preparation method thereof. The chemical structural formula of the fluorescent powder is Six-zAlzOzNy-z:Eua,Tmb. In the formula, x is larger than 6.3 and is smaller than or equal to 8, z is larger than or equal to 0.1 and is smaller than or equal to 0.3, y is equal to 4x / 3, a is larger than or equal to 0.001 and is smaller than or equal to 0.05, and b is larger than or equal to 0 and is smaller than or equal to 0.01. Preferably, x is larger than or equal to 6.5 and is smaller than or equal to 7.5, z is larger than or equal to 0.2 and is smaller than or equal to 0.3, and a is larger than or equal to 0.005 and is smaller than or equal to 0.05. According to the nitrogen oxide fluorescent powder for the liquid crystal backlight and the preparation method thereof, the method that the Si is slightly superfluous is adopted, and meanwhile the adulterate amount of the Al is limited, so that an activating agent enters a crystal lattice easily, and thus the luminous intensity of the fluorescent powder is improved. A gradient temperature rising method, Eu halide and a specific fluxing agent are combined, so that a reaction is carried out more easily, Eu2+ can enter the crystal lattice easily, and therefore the luminous performance of the fluorescent powder is improved.

Description

technical field [0001] The invention belongs to the technical field of fluorescent powder, and in particular relates to a nitrogen oxide fluorescent powder used in a liquid crystal backlight source and a preparation method thereof. Background technique [0002] In recent years, LCD TV display technology has developed rapidly, and the backlight source technology, which is one of the core technologies of LCD display, has also been greatly developed. It has become a recognized development trend that LED replaces CCFL as the next generation LCD backlight technology. Liquid crystal display backlight will become the largest application market of LED, accounting for more than 40% of the total LED market. [0003] The use of LED as the LCD backlight greatly improves the image quality, especially in terms of color saturation. The color gamut coverage rate of LED backlight reaches 90-100% of NTSC, which is significantly improved compared with 70-80% of CCFL backlight, and makes up f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/64H01L33/50
Inventor 何锦华滕晓明梁超符义兵
Owner JIANGSU BREE OPTRONICS CO LTD